US5654583A
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Semiconductor device having first and second semiconductor structures directly bonded to each other
Assignee: Hitachi Ltd
•
Filing: 1995-06-23
•
Granted: 1997-08-05
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Expires: 2015-06-23
Abstract
Abstract The semiconductor device has a semiconductor structure directly bonded onto another semiconductor structure of a different kind from the former. These two semiconductor structures are arranged in such a way that their crystal structures in a cross section perpendicular to the bonded interface of the two semiconductor structures are different from each other or that their lattice orders are not equivalent. This can be applied to direct bonding of any combination of semiconductor structures in any crystallographic orientation relation. This also allows bonding of three or more kinds of semiconductor structures.
Inventors
- 👤 Yae Okuno
- 👤 Kazuhisa Uomi
- 👤 Masahiro Aoki
- 👤 Misuzu Sagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0215; H10; H10D; H10D99/00; B; B82; B82Y; B82Y20/00; H01S5/021; H01S5/0217; H01S5/026; H01S5/0265; H01S5/10; H01S5/1003; H01S5/101; H01S5/12; H01S5/124; H01S5/1243; H01S5/20; H01S5/22; H01S5/2201; H01S5/227; H01S5/2275; H01S5/30; H01S5/32; H01S5/3202; H01S5/34; H01S5/343; H01S5/34306
Claims Analysis
Total Claims: 73
Claim 1
Independent Claim
94 words
A semiconductor device comprising: a first semiconductor structure having a first lattice constant; and a second semiconductor structure directly bonded onto the first semiconductor structure and having a second lattice constant different from the first lattice constant; wherein in a cross section perpendicular to a bonded interface of the first and second semiconductor structures, crystal structures of the first semiconductor structure and the second semiconductor structure differ from each other, and crystallographic orientations of the first and second semiconductor structures, perpendicular to a bonding interface between the first and second semiconductor structures, are different.
Claim 2
Dependent Claim
94 words
A semiconductor device comprising: a first semiconductor structure having a first lattice constant; and a second semiconductor structure directly bonded onto the first semiconductor structure and having a second lattice constant different from the first lattice constant; wherein in a cross section perpendicular to a bonded interface of the first and second semiconductor structures, crystal structures of the first semiconductor structure and the second semiconductor structure differ from each other, and crystallographic orientations of the first and second semiconductor structures, perpendicular to a bonding interface between the first and second semiconductor structures, are different.
Claim 3
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the second semiconductor structure has as a unit lattice the same Bravais lattice as that of the first semiconductor structure.
Claim 4
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein the first semiconductor structure is made of Si and the second semiconductor structure is made of compound semiconductors.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 3, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 6
Dependent Claim
37 words
A semiconductor device according to claim 4, wherein the direct bonding is a bonding done by placing a (011) plane of the first semiconductor structure and a (100) plane of the second semiconductor structure face to face.
Claim 7
Dependent Claim
12 words
A semiconductor device according to claim 4, constituting an optical semiconductor device.
Claim 8
Dependent Claim
19 words
A semiconductor device according to claim 6, wherein the optical semiconductor device is an edge-emitting type light emitting device.
Claim 9
Dependent Claim
23 words
A semiconductor device according to claim 7, wherein the edge-emitting type light emitting device is a distributed feedback device formed with a grating.
Claim 10
Dependent Claim
19 words
A semiconductor device according to claim 6, wherein the optical semiconductor device is a waveguide type light detecting device.
Claim 11
Dependent Claim
28 words
A semiconductor device according to claim 6, wherein the optical semiconductor device operates by utilizing changes in refractive index of light in the semiconductor caused by voltage application.
Claim 12
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein the first semiconductor structure and the second semiconductor structure are made of compound semiconductors.
Claim 13
Dependent Claim
17 words
A semiconductor device according to claim 11, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 14
Dependent Claim
32 words
A semiconductor device according to claim 12, wherein the direct bonding is a bonding done by placing (100) planes of the first semiconductor structure and the second semiconductor structure face to face.
Claim 15
Dependent Claim
12 words
A semiconductor device according to claim 12, constituting an optical semiconductor device.
Claim 16
Dependent Claim
20 words
A semiconductor device according to claim 14, wherein the optical semiconductor device is an edge-emitting irradiation type light emitting device.
Claim 17
Dependent Claim
24 words
A semiconductor device according to claim 15, wherein the edge-emitting irradiation type light emitting device is a distributed feedback device formed with a grating.
Claim 18
Dependent Claim
19 words
A semiconductor device according to claim 14, wherein the optical semiconductor device is a waveguide type light detecting device.
Claim 19
Dependent Claim
28 words
A semiconductor device according to claim 14, wherein the optical semiconductor device operates by utilizing changes in refractive index of light in the semiconductor caused by voltage application.
Claim 20
Dependent Claim
87 words
A semiconductor device comprising: a first semiconductor structure having a first lattice constant; and a second semiconductor structure directly bonded onto the first semiconductor structure and having a second lattice constant different from the first lattice constant; wherein in a cross section perpendicular to a bonding interface of the first and second semiconductor structures, lattice orders of the first semiconductor structure and the second semiconductor structure are not equivalent, and crystallographic orientations of the first and second semiconductor structures, perpendicular to the bonding interface therebetween, are different.
Claim 21
Dependent Claim
87 words
A semiconductor device comprising: a first semiconductor structure having a first lattice constant; and a second semiconductor structure directly bonded onto the first semiconductor structure and having a second lattice constant different from the first lattice constant; wherein in a cross section perpendicular to a bonding interface of the first and second semiconductor structures, lattice orders of the first semiconductor structure and the second semiconductor structure are not equivalent, and crystallographic orientations of the first and second semiconductor structures, perpendicular to the bonding interface therebetween, are different.
Claim 22
Dependent Claim
28 words
A semiconductor device according to claim 19, wherein the second semiconductor structure has as a unit lattice the same Bravais lattice as that of the first semiconductor structure.
Claim 23
Dependent Claim
26 words
A semiconductor device according to claim 19, wherein the first semiconductor structure is made of Si and the second semiconductor structure is made of compound semiconductors.
Claim 24
Dependent Claim
17 words
A semiconductor device according to claim 21, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 25
Dependent Claim
37 words
A semiconductor device according to claim 22, wherein the direct bonding is a bonding done by placing a (011) plane of the first semiconductor structure and a (100) plane of the second semiconductor structure face to face.
Claim 26
Dependent Claim
12 words
A semiconductor device according to claim 22, constituting an optical semiconductor device.
Claim 27
Dependent Claim
19 words
A semiconductor device according to claim 24, wherein the optical semiconductor device is an edge-emitting type light emitting device.
Claim 28
Dependent Claim
23 words
A semiconductor device according to claim 25, wherein the edge-emiting type light emitting device is a distributed feedback device formed with a grating.
Claim 29
Dependent Claim
19 words
A semiconductor device according to claim 24, wherein the optical semiconductor device is a waveguide type light detecting device.
Claim 30
Dependent Claim
28 words
A semiconductor device according to claim 24, wherein the optical semiconductor device operates by utilizing changes in refractive index of light in the semiconductor caused by voltage application.
Claim 31
Dependent Claim
22 words
A semiconductor device according to claim 19, wherein the first semiconductor structure and the second semiconductor structure are made of compound semiconductors.
Claim 32
Dependent Claim
17 words
A semiconductor device according to claim 29, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 33
Dependent Claim
32 words
A semiconductor device according to claim 30, wherein the direct bonding is a bonding done by placing (100) planes of the first semiconductor structure and the second semiconductor structure face to face.
Claim 34
Dependent Claim
12 words
A semiconductor device according to claim 30, constituting an optical semiconductor device.
Claim 35
Dependent Claim
20 words
A semiconductor device according to claim 32, wherein the optical semiconductor device is an edge-emitting irradiation type light emitting device.
Claim 36
Dependent Claim
24 words
A semiconductor device according to claim 33, wherein the edge-emitting irradiation type light emitting device is a distributed feedback device formed with a grating.
Claim 37
Dependent Claim
19 words
A semiconductor device according to claim 32, wherein the optical semiconductor device is a waveguide type light detecting device.
Claim 38
Dependent Claim
28 words
A semiconductor device according to claim 32, wherein the optical semiconductor device operates by utilizing changes in refractive index of light in the semiconductor caused by voltage application.
Claim 39
Dependent Claim
136 words
A semiconductor device comprising: a first semiconductor structure having a first lattice constant; a second semiconductor structure directly bonded onto a part of the surface of the first semiconductor structure, the second semiconductor structure having a second lattice constant and having as a unit lattice the same Bravais lattice as that of the first semiconductor structure; and a third semiconductor structure directly bonded onto or epitaxially grown on another part of the surface of the first semiconductor structure, the third semiconductor structure having a third lattice constant and having as a unit lattice the same Bravais lattice as that of the first semiconductor structure; wherein in a cross section perpendicular to a bonded interface of the first and second semiconductor structures, lattice orders of the first semiconductor structure and the second semiconductor structure are not equivalent.
Claim 40
Dependent Claim
136 words
A semiconductor device comprising: a first semiconductor structure having a first lattice constant; a second semiconductor structure directly bonded onto a part of the surface of the first semiconductor structure, the second semiconductor structure having a second lattice constant and having as a unit lattice the same Bravais lattice as that of the first semiconductor structure; and a third semiconductor structure directly bonded onto or epitaxially grown on another part of the surface of the first semiconductor structure, the third semiconductor structure having a third lattice constant and having as a unit lattice the same Bravais lattice as that of the first semiconductor structure; wherein in a cross section perpendicular to a bonded interface of the first and second semiconductor structures, lattice orders of the first semiconductor structure and the second semiconductor structure are not equivalent.
Claim 41
Dependent Claim
38 words
A semiconductor device according to claim 37, wherein in any cross section perpendicular to a bonded interface of the first and third semiconductor structures, lattice orders of the first semiconductor structure and the third semiconductor structure are equivalent.
Claim 42
Dependent Claim
28 words
A semiconductor device according to claim 38, wherein the first semiconductor structure is made of Si and the second and third semiconductor structures are made of compound semiconductors.
Claim 43
Dependent Claim
17 words
A semiconductor device according to claim 39, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 44
Dependent Claim
28 words
A semiconductor device according to claim 40, wherein the semiconductor device is a photonic integrated device or opto-electronic integrated device comprising two or more kinds of device elements.
Claim 45
Dependent Claim
20 words
A semiconductor device according to claim 38, wherein the first, second and third semiconductor structures are formed of compound semiconductors.
Claim 46
Dependent Claim
17 words
A semiconductor device according to claim 42, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 47
Dependent Claim
28 words
A semiconductor device according to claim 43, wherein the semiconductor device is a photonic integrated device or opto-electronic integrated device comprising two or more kinds of device elements.
Claim 48
Dependent Claim
53 words
A semiconductor device according to claim 37, wherein the third semiconductor structure is directly bonded onto the surface of the first semiconductor structure, and the lattice orders of the first semiconductor structure and the third semiconductor structure in a cross section perpendicular to the bonded interface of the semiconductor device are not equivalent.
Claim 49
Dependent Claim
35 words
A semiconductor device according to claim 45, wherein in any cross section perpendicular to the bonded interface of the semiconductor device, lattice orders of the second semiconductor structure and the third semiconductor structure are equivalent.
Claim 50
Dependent Claim
28 words
A semiconductor device according to claim 46, wherein the first semiconductor structure is made of Si and the second and third semiconductor structures are made of compound semiconductors.
Claim 51
Dependent Claim
17 words
A semiconductor device according to claim 47, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 52
Dependent Claim
28 words
A semiconductor device according to claim 48, wherein the semiconductor device is a photonic integrated device or opto-electronic integrated device comprising two or more kinds of device elements.
Claim 53
Dependent Claim
20 words
A semiconductor device according to claim 46, wherein the first, second and third semiconductor structures are made of compound semiconductors.
Claim 54
Dependent Claim
17 words
A semiconductor device according to claim 50, wherein the compound semiconductors are III-V or II-VI group compounds.
Claim 55
Dependent Claim
28 words
A semiconductor device according to claim 51, wherein the semiconductor device is a photonic integrated device or opto-electronic integrated device comprising two or more kinds of device elements.
Claim 56
Dependent Claim
37 words
A semiconductor device according to claim 45, wherein the lattice orders of the second semiconductor structure and the third semiconductor structure in a cross section perpendicular to the bonded interface of the semiconductor device are not equivalent.
Claim 57
Dependent Claim
29 words
A semiconductor device according to claim 53, wherein the first semiconductor structure is made of Si and the second and third semiconductor structures are made of a compound semiconductor.
Claim 58
Dependent Claim
18 words
A semiconductor device according to claim 54, wherein the compound semiconductor is a III-V or II-VI group compound.
Claim 59
Dependent Claim
28 words
A semiconductor device according to claim 55, wherein the semiconductor device is a photonic integrated device or opto-electronic integrated device comprising two or more kinds of device elements.
Claim 60
Dependent Claim
21 words
A semiconductor device according to claim 53, wherein the first, second and third semiconductor structures are made of a compound semiconductor.
Claim 61
Dependent Claim
18 words
A semiconductor device according to claim 57, wherein the compound semiconductor is a III-V or II-VI group compound.
Claim 62
Dependent Claim
28 words
A semiconductor device according to claim 58, wherein the semiconductor device is a photonic integrated device or opto-electronic integrated device comprising two or more kinds of device elements.
Claim 63
Dependent Claim
50 words
A semiconductor device according to claim 5, wherein the direct bonding is a bonding done by placing one of {111} planes of the first semiconductor structure perpendicular to its (011) plane and one of {011} planes of the second semiconductor structure perpendicular to its (100) planes parallel to each other.
Claim 64
Dependent Claim
50 words
A semiconductor device according to claim 13, wherein the direct bonding is a bonding done by placing [0-11] orientations of the first semiconductor structure and the second semiconductor structure parallel to each other, or [011] orientations of the first semiconductor structure and the second semiconductor structure parallel to each other.
Claim 65
Dependent Claim
50 words
A semiconductor device according to claim 23, wherein the direct bonding is a bonding done by placing one of {111} planes of the first semiconductor structure perpendicular to its (011) plane and one of {011} planes of the second semiconductor structure perpendicular to its (100) planes parallel to each other.
Claim 66
Dependent Claim
50 words
A semiconductor device according to claim 31, wherein the direct bonding is a bonding done by placing [0-11] orientations of the first semiconductor structure and the second semiconductor structure parallel to each other, or [011] orientations of the first semiconductor structure and the second semiconductor structure parallel to each other.
Claim 67
Dependent Claim
59 words
A semiconductor device according to claim 4, wherein the bonding plane of the first semiconductor structure is (011), and the bonding plane of the second semiconductor structure is (100), at the bonding interface, and wherein one of {111} planes of the first semiconductor structure and one of {011} planes of the second semiconductor structure are parallel to each other.
Claim 68
Dependent Claim
64 words
A semiconductor device according to claim 12, wherein the bonding plane of the first semiconductor structure is (100), and the bonding plane of the second semiconductor structure is (100), at the bonding interface, and wherein [0-11] orientations of the first and second semiconductor structures are parallel to each other, or [011] orientations of the first and second semiconductor structures are parallel to each other.
Claim 69
Dependent Claim
59 words
A semiconductor device according to claim 22, wherein the bonding plane of the first semiconductor structure is (011), and the bonding plane of the second semiconductor structure is (100), at the bonding interface, and wherein one of {111} planes of the first semiconductor structure and one of {011} planes of the second semiconductor structure are parallel to each other.
Claim 70
Dependent Claim
64 words
A semiconductor device according to claim 30, wherein the bonding plane of the first semiconductor structure is (100), and the bonding plane of the second semiconductor structure is (100), at the bonding interface, and wherein [0-11] orientations of the first and second semiconductor structures are parallel to each other, or [011] orientations of the first and second semiconductor structures are parallel to each other.
Claim 71
Dependent Claim
44 words
A semiconductor device comprising: a first semiconductor structure; and a second semiconductor structure directly bonded to the first semiconductor structure, wherein crystallographic orientations of the first and second semiconductor structures, perpendicular to a bonding interface between the first and second semiconductor structures, are different.
Claim 72
Dependent Claim
44 words
A semiconductor device comprising: a first semiconductor structure; and a second semiconductor structure directly bonded to the first semiconductor structure, wherein crystallographic orientations of the first and second semiconductor structures, perpendicular to a bonding interface between the first and second semiconductor structures, are different.
Claim 73
Dependent Claim
37 words
A semiconductor device according to claim 68, wherein, in a cross section perpendicular to the bonding interface between the first and second semiconductor structures, crystal structures of the first and second semiconductor structures differ from each other.
References Cited (Backward Citations)
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