US5231302A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device including an oblique surface and an electrode crossing the oblique surface
Assignee: Mitsubishi Electric Corp
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Filing: 1991-11-15
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Granted: 1993-07-27
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Expires: 2011-11-15
Abstract
Abstract A semiconductor device is made by etching a III-V compound semiconductor layer having a (100) surface using a mask having an opening defined by edges including at least one edge along an [011] direction of the layer so that the surface revealed by etching has a (111) orientation. An electrode is formed on the (111) surface by vacuum vapor deposition.
Inventors
- 👤 Misao Hironaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:03
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10D; H10D62/00; H10D62/40; H10D62/405; H10D64/00; H10D64/01; H10D64/011; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
57 words
A semiconductor device comprising a III-V compound semiconductor layer having a major surface in a (100) plane of said semiconductor layer, an oblique surface having an [011] oriented region, said oblique surface lying in a (111) plane, and an electrode disposed on said major surface of said semiconductor layer, passing over and disposed on said oblique surface.
Claim 2
Dependent Claim
57 words
A semiconductor device comprising a III-V compound semiconductor layer having a major surface in a (100) plane of said semiconductor layer, an oblique surface having an [011] oriented region, said oblique surface lying in a (111) plane, and an electrode disposed on said major surface of said semiconductor layer, passing over and disposed on said oblique surface.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1 wherein said oblique surface includes a [011] oriented region connected to said [011] oriented region.
Claim 4
Dependent Claim
32 words
A semiconductor device according to claim 1 wherein said semiconductor layer is disposed on a second III-V compound semiconductor layer and said electrode is disposed on said second III-V compound semiconductor layer.
Claim 5
Dependent Claim
32 words
A semiconductor device according to claim 2 wherein said semiconductor layer is disposed on a second III-V compound semiconductor layer and said electrode is disposed on said second III-V compound semiconductor layer.
References Cited (Backward Citations)
US3920492A
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US3765969A
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US4079507A
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US4438448A
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US5151764A
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US5065200A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |