Geometry dependent doping and electronic devices produced thereby

Claim 2

A semiconductor structure, comprising: a substrate comprising a compound semiconductor and having formed in a principal surface of a first orientation a groove extending along a first direction, said groove having a sloping sidewall of a second orientation different from said first orientation, said principal surface having a planar area and a grooved area, said grooved area including at least a portion of said sidewall; and a p-n structure comprising a superlattice of a plurality of alternating semiconducting layers of a substantially uniform n-type conductivity and semiconducting layers of a substantially uniform p-type conductivity overlying a first one of said planar area and said grooved area, said superlattice including a semiconductor layer comprising a compound semiconductor epitaxially formed over said planar area and said grooved area, said semiconductor layer comprising a first area of said substantially uniform p-type conductivity overlying one of said planar area and said grooved area and a second area of said substantially uniform n-type conductivity overlying the other of said planar area and said grooved area, said first and second areas being contiguous and said semiconductor layer being epitaxial between said first and second areas.

Claim 3

A semiconductor structure as recited in claim 1, further comprising a lower cladding layer of a compound semiconductor having a substantially same conductivity type throughout and epitaxially formed on said substrate across said planar and grooved areas and an active layer of a quaternary semiconductor epitaxially formed on said lower cladding layer below said semiconductor layer.

Claim 4

A double heterojunction laser, comprising: a compound semiconductor substrate having two parallel grooves formed in a principal face of a first orientation and extending along a first direction, said parallel grooves being separated by a planar area of said substrate having said first orientation; a lower cladding layer comprising a compound semiconductor of a first conductivity type being epitaxially formed on said substrate over a first area including said grooves and said planar area and continuous therebetween; an active layer comprising a compound semiconductor being epitaxially formed over said lower cladding layer over said first area; and an upper cladding layer comprising a compound semiconductor and two different and coextensive dopant species epitaxially formed on said active layer over said first area, said upper cladding layer being of a second conductivity type in a portion overlying said planar area and being of said first conductivity type in portions overlying said grooves, wherein said two dopant species produce opposite conductivity types in said compound semiconductor, at least one of said two dopant species having a substantially different incorporation rate between different crystallographic orientations of said compound semiconductor.

Claim 5

A double heterojunction laser, comprising: a compound semiconductor substrate having two parallel grooves formed in a principal face of a first orientation and extending along a first direction, said parallel grooves being separated by a planar area of said substrate having said first orientation; a lower cladding layer comprising a compound semiconductor of a first conductivity type being epitaxially formed on said substrate over a first area including said grooves and said planar area and continuous therebetween; an active layer comprising a compound semiconductor being epitaxially formed over said lower cladding layer over said first area; and an upper cladding layer comprising a compound semiconductor and two different and coextensive dopant species epitaxially formed on said active layer over said first area, said upper cladding layer being of a second conductivity type in a portion overlying said planar area and being of said first conductivity type in portions overlying said grooves, wherein said two dopant species produce opposite conductivity types in said compound semiconductor, at least one of said two dopant species having a substantially different incorporation rate between different crystallographic orientations of said compound semiconductor.

Claim 6

A lateral compound semiconductor p-n junction structure, comprising: a substrate of a semiinsulating compound semiconductor having formed in a principal face thereof a groove extending in a first direction; a semiconductor layer comprising a compound semiconductor and two different and coextensive dopant species epitaxially formed over said substrate over a first area including said groove and over second and third areas including planar portions of said substrate on opposing lateral sides of said groove, said semiconductor layer being of a first conductivity type in a first portion overlying said first area and being of a second conductivity type in second and third portions overlying said second and third areas, wherein said two dopant species produce opposite conductivity types in said compound semiconductor, at least one of said two dopant species having a substantially different incorporation rate between different orientations of said compound semiconductor; and means for establishing a current path in said semiconductor layer passing from said second portion through said first portion to said third portion.

Claim 7

A lateral compound semiconductor p-n junction structure, comprising: a substrate of a semiinsulating compound semiconductor having formed in a principal face thereof a groove extending in a first direction; a semiconductor layer comprising a compound semiconductor and two different and coextensive dopant species epitaxially formed over said substrate over a first area including said groove and over second and third areas including planar portions of said substrate on opposing lateral sides of said groove, said semiconductor layer being of a first conductivity type in a first portion overlying said first area and being of a second conductivity type in second and third portions overlying said second and third areas, wherein said two dopant species produce opposite conductivity types in said compound semiconductor, at least one of said two dopant species having a substantially different incorporation rate between different orientations of said compound semiconductor; and means for establishing a current path in said semiconductor layer passing from said second portion through said first portion to said third portion.

Claim 8

A semiconductor structure, comprising: a substrate comprising a compound semiconductor and having formed in a principal surface of a first orientation a groove extending along a first direction, said groove having a sloping sidewall of a second orientation different from said first orientation; and a semiconductor layer comprising a compound semiconductor epitaxially formed over a planar area and a grooved area of said principal surface, said grooved area including at least a portion of said sidewall, said semiconductor layer comprising a first area of a substantially uniform p-type conductivity overlying one of said planar area and said grooved area and a second area of a substantially uniform n-type conductivity overlying the other of said planar area and said grooved area, said first and second areas being contiguous and said semiconductor layer being epitaxial between said first and second areas; wherein said semiconductor layer comprises two different and coextensive dopant species producing opposite conductivity types in said compound semiconductor, at least one of said two dopant species having a substantially different incorporation rate between said first orientation and said second orientation of said compound semiconductor.

Claim 9

A semiconductor structure, comprising: a substrate comprising a compound semiconductor and having formed in a principal surface of a first orientation a groove extending along a first direction, said groove having a sloping sidewall of a second orientation different from said first orientation; and a semiconductor layer comprising a compound semiconductor epitaxially formed over a planar area and a grooved area of said principal surface, said grooved area including at least a portion of said sidewall, said semiconductor layer comprising a first area of a substantially uniform p-type conductivity overlying one of said planar area and said grooved area and a second area of a substantially uniform n-type conductivity overlying the other of said planar area and said grooved area, said first and second areas being contiguous and said semiconductor layer being epitaxial between said first and second areas; wherein said semiconductor layer comprises two different and coextensive dopant species producing opposite conductivity types in said compound semiconductor, at least one of said two dopant species having a substantially different incorporation rate between said first orientation and said second orientation of said compound semiconductor.

Claim 10

A semiconductor structure as recited in claim 1, wherein said p-n structure comprises a region of a substantially same conductivity type throughout and overlying a second one of said planar area and said grooved area laterally adjacent to said superlattice.

Claim 11

A semiconductor structure as recited in claim 2, wherein said same conductivity type is n-type.

Claim 12

A laser as recited in claim 3, wherein boundaries separating first conductivity type from second conductivity type portions of said upper cladding layer substantially overlie boundaries separating said planar area from said grooves.

Claim 13

A laser as recited in claim 4, wherein boundaries separating said first portion from said second and third portions of said semiconductor layer substantially overlie boundaries separating said groove from said planar portions.

Claim 14

A double heterojunction laser as recited in claim 3, wherein said first orientation is a [001] orientation and wherein said first direction, said first conductivity type, and said second conductivity type are interrelated according to one of a first relationship and a second relationship; wherein according to said first relationship said first direction is [011], said first conductivity type is p type and said second conductivity type is n type; and wherein according to said second relationship said first direction is [011], said first conductivity type is n type, and said second conductivity type is p type.

Claim 15

A lateral compound semiconductor p-n junction structure as recited in claim 8, wherein said principal face has a [001] orientation and wherein said first direction, said first conductivity type, and said second conductivity type are interrelated according to one of a first relationship and a second relationship; wherein according to said first relationship said first direction is [011], said first conductivity type is p type and said second conductivity type is n type; and wherein according to said second relationship said first direction is [011], said first conductivity type is n type, and said second conductivity type is p type.