US4932033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
Assignee: Canon Inc
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Filing: 1988-11-17
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Granted: 1990-06-05
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Expires: 2008-11-17
Abstract
Abstract A semiconductor laser having a laser resonator structure having a substrate with a trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator, a first semiconductor layer of a first or second conductivity type formed on the substrate, an active layer for generating a laser beam, a second semiconductor layer formed on the substrate and to which an impurity of a convertible conductivity type is doped with a portion of the second semiconductor layer above the inclined surface of the substrate having the first conductivity type and the other portion having the second conductivity type, and a pair of electrodes causing a current to flow through the active layer.
Inventors
- 👤 Seiichi Miyazawa
- 👤 Mitsuru Ohtsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2231; H01S5/2234; H01S5/2235; H01S5/2237; H01S5/2238; H01S5/3077; H01S5/3081; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
158 words
A semiconductor laser having a laser resonator structure, comprising: a substrate having a trapezoidal projection, said trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator; a first semiconductor layer of a first or second conductivity type formed on said substrate; an active layer formed on said substrate for generating a laser beam; a second semiconductor layer which is formed on said substrate and to which an impurity of a convertible conductivity type is doped, a portion of said second semiconductor layer above the included surface of said substrate having the first conductivity type, and the other portion having the second conductivity type; and a pair of electrodes causing a current to flow through said active layer; wherein the laser beam is emitted from a region of said active layer on said upper base of said projection by causing said current to flow through said active layer.
Claim 2
Dependent Claim
158 words
A semiconductor laser having a laser resonator structure, comprising: a substrate having a trapezoidal projection, said trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator; a first semiconductor layer of a first or second conductivity type formed on said substrate; an active layer formed on said substrate for generating a laser beam; a second semiconductor layer which is formed on said substrate and to which an impurity of a convertible conductivity type is doped, a portion of said second semiconductor layer above the included surface of said substrate having the first conductivity type, and the other portion having the second conductivity type; and a pair of electrodes causing a current to flow through said active layer; wherein the laser beam is emitted from a region of said active layer on said upper base of said projection by causing said current to flow through said active layer.
Claim 3
Dependent Claim
74 words
A laser according to claim 1, wherein a deposition surface on which said second semiconductor layer is formed has a portion above the inclined surface which is substantially parallel to a <110> axis indicated by a lattice direction index, and defines an angle of not less than 20° with a {001} plane indicated by the Miller index, and the other portion which defines an angle of not more than 20° with the {001} plane.
Claim 4
Dependent Claim
16 words
A laser according to claim 2, wherein said second semiconductor layer comprises Si-doped GaAs or AeGaAs.
Claim 5
Dependent Claim
31 words
A laser according to claim 1, wherein said first and second semiconductor layers are arranged to sandwich said active layer therebetween, and said first semiconductor layer has the first conductivity type.
Claim 6
Dependent Claim
31 words
A laser according to claim 4, wherein said semiconductor laser further comprises a third semiconductor layer which is in contact with said second semiconductor layer and has the second conductivity type.
Claim 7
Dependent Claim
22 words
A laser according to claim 5, wherein said third semiconductor layer is arranged between said active layer and said second semiconductor layer.
Claim 8
Dependent Claim
16 words
A laser according to claim 6, wherein said third semiconductor layer comprises Sn-doped GaAs or AeGaAs.
Claim 9
Dependent Claim
167 words
A semiconductor laser having a laser resonator structure, comprising: a substrate on the surface of which a concave-convex like projection is formed so as to form inclined surfaces extending along a resonating direction of a resonator and having a top portion extending between said inclined surfaces; a first semiconductor layer of a first or second conductivity type formed on said substrate; an active layer formed on said substrate for generating a laser beam; a second semiconductor layer which is formed on said substrate and to which an impurity of a convertible conductivity type is doped, a portion of said second semiconductor layer above the inclined surface of said substrate having the first conductivity type, and the other portion having the second conductivity type; and a pair of electrodes causing a current to flow through said active layer; wherein the laser beam is emitted from a region of said active layer on said top portion of said projection by causing said current to flow through said active layer.
Claim 10
Dependent Claim
167 words
A semiconductor laser having a laser resonator structure, comprising: a substrate on the surface of which a concave-convex like projection is formed so as to form inclined surfaces extending along a resonating direction of a resonator and having a top portion extending between said inclined surfaces; a first semiconductor layer of a first or second conductivity type formed on said substrate; an active layer formed on said substrate for generating a laser beam; a second semiconductor layer which is formed on said substrate and to which an impurity of a convertible conductivity type is doped, a portion of said second semiconductor layer above the inclined surface of said substrate having the first conductivity type, and the other portion having the second conductivity type; and a pair of electrodes causing a current to flow through said active layer; wherein the laser beam is emitted from a region of said active layer on said top portion of said projection by causing said current to flow through said active layer.
Claim 11
Dependent Claim
22 words
A laser according to claim 8, wherein said second semiconductor layer has a function to constrict said current injected by said electrodes.
Claim 12
Dependent Claim
74 words
A laser according to claim 8, wherein a deposition surface on which said second semiconductor layer is formed has a portion above the inclined surface which is substantially parallel to a <110> axis indicated by a lattice direction index, and defines an angle of not less than 20° with a {001} plane indicated by the Miller index, and the other portion which defines an angle of not more than 20° with the {001} plane.
Claim 13
Dependent Claim
16 words
A laser according to claim 10, wherein said second semiconductor layer comprises Si-doped GaAs or AlGaAs.
Claim 14
Dependent Claim
31 words
A laser according to claim 8, wherein said first and second semiconductor layers are arranged to sandwich said active layer therebetween, and said first semiconductor layer has the first conductivity type.
Claim 15
Dependent Claim
31 words
A laser according to claim 12, wherein said semiconductor laser further comprises a third semiconductor layer which is in contact with said second semiconductor layer and has the second conductivity type.
Claim 16
Dependent Claim
22 words
A laser according to claim 13, wherein said third semiconductor layer is arranged between said active layer and said second semiconductor layer.
Claim 17
Dependent Claim
16 words
A laser according to claim 14, wherein said third semiconductor layer comprises Sn-doped GaAs or AlGaAs.
Claim 18
Dependent Claim
166 words
A semiconductor laser having a laser resonator structure, comprising: a substrate the surface of which is formed so as to have a mesa-like projection including inclined surfaces extending along a resonating direction of a resonator and, having a top portion extending between said inclined surfaces; a first semiconductor layer of a first or second conductivity type formed on said substrate; an active layer formed on said substrate for generating a laser beam; a second semiconductor layer which is formed on said substrate and to which an impurity of a convertible conductivity type is doped, a portion of said second semiconductor layer above the inclined surface of said substrate having the first conductivity type, and the other portion having the second conductivity type; and a pair of electrodes causing a current to flow through said active layer; wherein the laser beam is emitted from a region of said active layer on said top portion of said projection by causing said current to flow through said active layer.
Claim 19
Dependent Claim
166 words
A semiconductor laser having a laser resonator structure, comprising: a substrate the surface of which is formed so as to have a mesa-like projection including inclined surfaces extending along a resonating direction of a resonator and, having a top portion extending between said inclined surfaces; a first semiconductor layer of a first or second conductivity type formed on said substrate; an active layer formed on said substrate for generating a laser beam; a second semiconductor layer which is formed on said substrate and to which an impurity of a convertible conductivity type is doped, a portion of said second semiconductor layer above the inclined surface of said substrate having the first conductivity type, and the other portion having the second conductivity type; and a pair of electrodes causing a current to flow through said active layer; wherein the laser beam is emitted from a region of said active layer on said top portion of said projection by causing said current to flow through said active layer.
Claim 20
Dependent Claim
22 words
A laser according to claim 16, wherein said second semiconductor layer has a function to constrict said current injected by said electrodes.
Claim 21
Dependent Claim
74 words
A laser according to claim 16, wherein a deposition surface on which said second semiconductor layer is formed has a portion above the inclined surface which is substantially parallel to a <110> axis indicated by a lattice direction index, and defines an angle or not less than 20° with a {001} plane indicated by the Miller index, and the other portion which defines an angle of not more than 20° with the {001} plane.
Claim 22
Dependent Claim
16 words
A laser according to claim 18, wherein said second semiconductor layer comprises Si-doped GaAs or AlGaAs.
Claim 23
Dependent Claim
31 words
A laser according to claim 16, wherein said first and second semiconductor layers are arranged to sandwich said active layer therebetween, and said first semiconductor layer has the first conductivity type.
Claim 24
Dependent Claim
31 words
A laser according to claim 20, wherein said semiconductor laser further comprises a third semiconductor layer which is in contact with said second semiconductor layer and has the second conductivity type.
Claim 25
Dependent Claim
22 words
A laser according to claim 21, wherein said third semiconductor layer is arranged between said active layer and said second semiconductor layer.
Claim 26
Dependent Claim
16 words
A laser according to claim 22, wherein said third semiconductor layer comprises Sn-doped GaAs or AlGaAs.
References Cited (Backward Citations)
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