US4839307A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
Assignee: Omron Corp
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Filing: 1987-05-11
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Granted: 1989-06-13
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Expires: 2007-05-11
Abstract
Abstract A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
Inventors
- 👤 Koichi Imanaka
- 👤 Hiroshi Imamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:22
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/24; H01S5/30; H01S5/305; H01S5/2231; H01S5/2237; H01S5/2238; H01S5/3077; H01S5/3081; H01S5/32; H01S5/323; H01S5/32308; Y; Y10; Y10S; Y10S148/00; Y10S148/041; Y10S148/056; Y10S148/072; Y10S148/095
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
78 words
A method of manufacturing a semiconductor laser having an internal current restriction, comprising the steps of: (a) forming a groove or difference in level exposing an (n11) (n=1-5) A face on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer; (b) growing Si-doped AlGaAs or GaAs layer thereon; and (c) providing thereon a double heterojunction structure having an n-type cladding layer in the form of tin-doped AlGaAs.
Claim 2
Independent Claim
78 words
A method of manufacturing a semiconductor laser having an internal current restriction, comprising the steps of: (a) forming a groove or difference in level exposing an (n11) (n=1-5) A face on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer; (b) growing Si-doped AlGaAs or GaAs layer thereon; and (c) providing thereon a double heterojunction structure having an n-type cladding layer in the form of tin-doped AlGaAs.
Claim 3
Dependent Claim
50 words
The method according to claim 1, wherein said step (a) includes placing an etching mask having a window on the (100) face-oriented p-type GaAs substrate or GaAs substrate having the p-type GaAs layer as a surface layer, and forming said groove by etching away an underlying surface through said window.
Claim 4
Dependent Claim
15 words
The method according to claim 1, wherein said step (b) is performed by molecular-beam epitaxy.
Claim 5
Independent Claim
87 words
A method of manufacturing a semiconductor laser having an internal current restriction, comprising the steps of: (a) forming a groove or difference in level exposing an (n11) (n=1-3) A face on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer; (b) growing Si-doped AlGaAs or GaAs layer thereon; (c) providing thereon a double heterojunction structure having an n-type cladding layer in the form of an Si-doped AlGaAs layer; and (d) further providing an n-type cap layer.
Claim 6
Independent Claim
87 words
A method of manufacturing a semiconductor laser having an internal current restriction, comprising the steps of: (a) forming a groove or difference in level exposing an (n11) (n=1-3) A face on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer; (b) growing Si-doped AlGaAs or GaAs layer thereon; (c) providing thereon a double heterojunction structure having an n-type cladding layer in the form of an Si-doped AlGaAs layer; and (d) further providing an n-type cap layer.
Claim 7
Dependent Claim
50 words
The method according to claim 4 wherein said step (a) includes placing an etching mask having a window on the (100) face-oriented p-type GaAs substrate or GaAs substrate having the p-type GaAs layer as a surface layer, and forming said groove by etching away an underlying surface through said window.
Claim 8
Dependent Claim
15 words
The method according to claim 4 wherein said step (b) is performed by molecular-beam epitaxy.
References Cited (Backward Citations)
US4251298A
Cited
US4599787A
Cited
JPS57989A
Cited
US4545057A
Cited
US4639925A
Cited
US4635268A
Cited
US4567060A
Cited
US4595454A
Cited
US4701926A
Cited
JPH11690A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-12 | 1992-12-12 | 1993-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-12 | 1996-12-12 | 1997-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-12 | 2000-12-12 | 2001-06-13 | $7700.00 | Window Closed / Lapsed |