US4701926A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser diode
Assignee: Mitsubishi Electric Corp
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Filing: 1986-03-06
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Granted: 1987-10-20
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Expires: 2006-03-06
Abstract
Abstract A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga 0 .6 Al 0 .4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga 0 .9 Al 0 .1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga 0 .6 Al 0 .4 As which is formed over the active layer and has a refractive index lower than that of the active layer.
Inventors
- 👤 Yoshito Seiwa
- 👤 Saburo Takamiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
152 words
In a laser diode: a semiconductor substrate of a first conductivity type; a current constricting layer of a second conductivity type formed with a slit over said substrate, wherein said slit is opened through said constricting layer and separates said constricting layer into two areas; a liner formed on at least both the inner side walls of said slit, wherein said liner is of the same material as said constricting layer but of the first conductivity type; a lower clad layer of the first conductivity type formed over said constricting layer, burying said slit; an active layer of the first conductivity type which is formed over said lower clad layer and has a refractive index higher than that of said lower clad layer; and an upper clad layer of the second conductivity type which is formed over said active layer and has a refractive index lower than that of said active layer.
Claim 2
Dependent Claim
152 words
In a laser diode: a semiconductor substrate of a first conductivity type; a current constricting layer of a second conductivity type formed with a slit over said substrate, wherein said slit is opened through said constricting layer and separates said constricting layer into two areas; a liner formed on at least both the inner side walls of said slit, wherein said liner is of the same material as said constricting layer but of the first conductivity type; a lower clad layer of the first conductivity type formed over said constricting layer, burying said slit; an active layer of the first conductivity type which is formed over said lower clad layer and has a refractive index higher than that of said lower clad layer; and an upper clad layer of the second conductivity type which is formed over said active layer and has a refractive index lower than that of said active layer.
Claim 3
Dependent Claim
27 words
The laser diode in accordance with claim 1, wherein said liner further has a pair of border portions extending outward from the upper edges of said slit.
Claim 4
Dependent Claim
20 words
The laser diode in accordance with claim 1, wherein said constricting layer and said liner both are formed of GaAs.
Claim 5
Dependent Claim
20 words
The laser diode in accordance with claim 2, wherein said constricting layer and said liner both are formed of GaAs.
Claim 6
Dependent Claim
40 words
The laser diode in accordance with claim 3, wherein said lower and upper clad layers both are formed of Ga 0 .6 Al 0 .4 As, and said active layer is formed of Ga 0 .9 Al 0 .1 As.
Claim 7
Dependent Claim
40 words
The laser diode in accordance with claim 4, wherein said lower and upper clad layers both are formed of Ga 0 .6 Al 0 .4 As, and said active layer is formed of Ga 0 .9 Al 0 .1 As.
Claim 8
Dependent Claim
24 words
The laser diode in accordance with claim 2, wherein said border portions of said liner flush with the upper surface of said constricting layer.
Claim 9
Dependent Claim
25 words
The laser diode in accordance with claim 2, wherein said border portions of said liner protrude upward from the upper surface of said constricting layer.
References Cited (Backward Citations)
US4326176A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-19 | 1991-04-20 | 1991-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-19 | 1995-04-20 | 1995-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-19 | 1999-04-20 | 1999-10-20 | $7700.00 | Window Closed / Lapsed |