US4599787A
Expired / Lapsed
US
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Method of manufacturing a light emitting semiconductor device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1981-11-25
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Granted: 1986-07-15
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Expires: 2001-11-25
Abstract
Abstract A light emitting semiconductor device having a double hetero junction structure in which oscillation in a single lateral mode is stably effected. A stair-shaped step part is formed in a stripe shape upon the surface of a substrate. A current blocking layer of an opposite conductivity type is formed over the semiconductor substrate with a thickness such that the current blocking layer is interrupted along the upper edge of the stair-shaped step part to form a break area therein which acts as a current concentration region. Over the current blocking layer and break area are formed a lower clad layer, an active layer, an upper clad layer, and an ohmic contact layer.
Inventors
- 👤 Yukihiro Sasatani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:55
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/819; H10H20/821; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
200 words
A method of manufacturing a stripe type double hetero structure light emitting semiconductor device consisting of the steps of: forming a stair-shaped step part on a semiconductor substrate of a first conductivity type extending in the form of a stripe; forming a current blocking layer of a second conductivity type by depositing said current blocking layer by liquid-phase epitaxial growth whereby the thickness of said current blocking layer at a position more than 20 μm away from the base of said stair-shaped step part is less than one-fourth of the height of said step part and whereby a part of said current blocking layer is interrupted by an edge portion of said stair-shaped step part to form a break area in the form of a strip, said break area forming a current concentration region; forming a lower clad layer of said first conductivity type over said current blocking layer and break area to a thickness whereby said break area is completely covered with said lower clad layer; forming an active layer of one of said first and second conductivity types over said lower clad area; and forming an upper clad layer of said second conductivity type over said active layer.
Claim 2
Independent Claim
200 words
A method of manufacturing a stripe type double hetero structure light emitting semiconductor device consisting of the steps of: forming a stair-shaped step part on a semiconductor substrate of a first conductivity type extending in the form of a stripe; forming a current blocking layer of a second conductivity type by depositing said current blocking layer by liquid-phase epitaxial growth whereby the thickness of said current blocking layer at a position more than 20 μm away from the base of said stair-shaped step part is less than one-fourth of the height of said step part and whereby a part of said current blocking layer is interrupted by an edge portion of said stair-shaped step part to form a break area in the form of a strip, said break area forming a current concentration region; forming a lower clad layer of said first conductivity type over said current blocking layer and break area to a thickness whereby said break area is completely covered with said lower clad layer; forming an active layer of one of said first and second conductivity types over said lower clad area; and forming an upper clad layer of said second conductivity type over said active layer.
References Cited (Backward Citations)
US4296387A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-14 | 1990-01-13 | 1990-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-14 | 1994-01-13 | 1994-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-14 | 1998-01-13 | 1998-07-15 | $7700.00 | Window Closed / Lapsed |