US4296387A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1979-05-18
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Granted: 1981-10-20
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Expires: 1999-05-18
Abstract
Abstract In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape, the improvement is that said substrate has a terrace part on its principal face, said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region inbetween and said stripe shape active region is disposed with a specified angle to said principal face.
Inventors
- 👤 Takashi Sugino
- 👤 Kunio Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:06
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2238
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
96 words
In a semiconductor laser of multi-layer heretostructure, an active layer epitaxially formed on a cladding layer on a substrate, a first ohmic contact electrode which is stripe shaped and disposed above said active layer, and a second ohmic contact electrode disposed under and contacting said substrate, said substrate having a terraced structure with a step part on its principle face, said active layer having a stripe shaped active region disposed oblique to said principle face between upper and lower parts which are horizontal to said principle face, with upper and lower bent parts disposed respectively between.
Claim 2
Dependent Claim
96 words
In a semiconductor laser of multi-layer heretostructure, an active layer epitaxially formed on a cladding layer on a substrate, a first ohmic contact electrode which is stripe shaped and disposed above said active layer, and a second ohmic contact electrode disposed under and contacting said substrate, said substrate having a terraced structure with a step part on its principle face, said active layer having a stripe shaped active region disposed oblique to said principle face between upper and lower parts which are horizontal to said principle face, with upper and lower bent parts disposed respectively between.
Claim 3
Dependent Claim
32 words
A semiconductor laser in accordance with claim 1, wherein said substrate has a terraced structure with a step part on its principal face, said active region is disposed above said step part.
Claim 4
Dependent Claim
26 words
A semiconductor laser in accordance with claim 1, wherein, said first ohmic contact electrode is formed in a stripe shaped opening formed in an insulating film.
Claim 5
Dependent Claim
26 words
A semiconductor laser in accordance with claim 2 wherein, said first ohmic contact electrode is formed in a stripe shaped opening formed in an insulating film.
Claim 6
Dependent Claim
44 words
A semiconductor laser in accordance with claim 1 wherein, said first ohmic contact electrode is a metal film formed on all the face of a hetero isolation layer which has a stripe shaped opening and has the same conductivity as that of said substrate.
Claim 7
Dependent Claim
44 words
A semiconductor laser in accordance with claim 2 wherein, said first ohmic contact electrode is a metal film formed on all the face of a hetero isolation layer which has a stripe shaped opening and has the same conductivity as that of said substrate.
Claim 8
Dependent Claim
43 words
A semiconductor laser in accordance with either of claim 2 or 6 wherein, a layer of the opposite conductivity type to that of the substrate is formed on the surface of the substrate except a part at the foot of said step part.
Claim 9
Dependent Claim
35 words
A semiconductor laser in accordance with either of claim 2 or 6 wherein, a high resistivity layer is formed on the surface of the substrate except a part at the foot of said step part.
Claim 10
Dependent Claim
27 words
A semiconductor laser in accordance with either one of claims 2 through 6 wherein, said active region is thicker than the other parts of said active layer.
Claim 11
Dependent Claim
47 words
A semiconductor laser in accordance with either one of claims 2 through 6 wherein said clad layer has a thicker part on said step part of a thickness larger than thicknesses of other parts of said clad layer, said active region being disposed on said thicker part.
References Cited (Backward Citations)
US4185256A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-19 | 1985-04-20 | 1985-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-19 | 1989-04-20 | 1989-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-19 | 1993-04-20 | 1993-10-20 | $7700.00 | Window Closed / Lapsed |