US5418374A
Expired / Lapsed
US
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Semiconductor device having an active layer with regions with different bandgaps
Assignee: Sony Corp
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Filing: 1993-06-02
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Granted: 1995-05-23
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Expires: 2013-06-02
Abstract
Abstract A ridge or groove is formed on a major surface of a semiconductor substrate which is formed on a first electrode and whose major surface having a ridge or groove is slanted to a <110> crystal axis direction from a {001} crystal plane. A first semiconductor layer is formed on the semiconductor substrate, then a semiconductor function layer deviating from a {111} B crystal plane is formed on the first semiconductor layer, then a second semiconductor layer is formed on the semiconductor function layer and then a second electrode is formed on the second semiconductor layer. The ridge or groove extends to the <110> crystal axis direction, and at least one of the first semiconductor layer, the semiconductor function layer and the second semiconductor layer includes phosphorus.
Inventors
- 👤 Etsuo Morita
- 👤 Shigetaka Tomiya
- 👤 Tadashi Yamamoto
- 👤 Akira Ishibashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:24
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2201; H01S5/2234; H01S5/2235; H01S5/3202; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/817
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
156 words
A compound semiconductor device comprising: a first electrode; a semiconductor substrate formed on said first electrode, said substrate having a major surface with a step portion slanted at an angle to a <110> crystal axis direction from a {001} crystal plane, said step portion having a first surface extending between two slanting surfaces with the first surface being parallel to the major surface and the slanting surfaces deviating from the {111} B crystal plane by several degrees; a first semiconductor layer formed on the first surface and slanting surfaces of said semiconductor substrate; a semiconductor function layer formed on said first semiconductor layer and having different bandgaps for the regions overlying the first surface and slanting surfaces; a second semiconductor layer formed on said semiconductor function layer; and a second electrode formed on said second semiconductor layer, at least one of said first semiconductor layer, said semiconductor function layer and said second semiconductor layer includes phosphorus.
Claim 2
Dependent Claim
156 words
A compound semiconductor device comprising: a first electrode; a semiconductor substrate formed on said first electrode, said substrate having a major surface with a step portion slanted at an angle to a <110> crystal axis direction from a {001} crystal plane, said step portion having a first surface extending between two slanting surfaces with the first surface being parallel to the major surface and the slanting surfaces deviating from the {111} B crystal plane by several degrees; a first semiconductor layer formed on the first surface and slanting surfaces of said semiconductor substrate; a semiconductor function layer formed on said first semiconductor layer and having different bandgaps for the regions overlying the first surface and slanting surfaces; a second semiconductor layer formed on said semiconductor function layer; and a second electrode formed on said second semiconductor layer, at least one of said first semiconductor layer, said semiconductor function layer and said second semiconductor layer includes phosphorus.
Claim 3
Dependent Claim
44 words
A compound semiconductor device according to claim 1, wherein said angle that said major surface of said semiconductor substrate is slanted to the <110> crystal axis direction from the {001}crystal plane is in a range larger than 0 degree and smaller then 10 degrees.
Claim 4
Dependent Claim
26 words
A compound semiconductor device according to claim 2, wherein said semiconductor function layer has a bandgap smaller than those of said first and second semiconductor layers.
Claim 5
Dependent Claim
29 words
A compound semiconductor device according to claim 3, wherein one of said first and second semiconductor layers serves as a layer for supplying electrons to said semiconductor function layer.
Claim 6
Dependent Claim
38 words
A compound semiconductor device according to claim 1, wherein the different bandgaps of the semiconductor function layer are formed by the function layer having an ordered structure region over the first surface and between intermixed and disordered regions.
Claim 7
Dependent Claim
15 words
A compound semiconductor device according to claim 1, wherein the step portion is a ridge.
Claim 8
Dependent Claim
15 words
A compound semiconductor device according to claim 1, wherein the step portion is a groove.
Claim 9
Dependent Claim
176 words
A light emitting device comprising: a first electrode; a semiconductor substrate formed on said first electrode, said substrate having a major surface with a step portion slanted at an angle to a <110> crystal axis direction from a {001} crystal plane, said step portion having a first surface extending between two slanting surfaces with the first surface being parallel to the major surface and the slanting surfaces deviating from the {111} B crystal plane by several degrees; a first cladding layer made of first semiconductor material and formed on the first surface and slanting surfaces of the step portion of said semiconductor substrate; an active layer made of second semiconductor material formed on said first cladding layer and having different bandgaps for regions overlying the first surface and the slanting surfaces; a second cladding layer made of the second semiconductor material and formed on said active layer; and a second electrode formed on said second cladding layer, wherein at least one of said first cladding layer, said active layer and said second cladding layer includes phosphorus.
Claim 10
Dependent Claim
176 words
A light emitting device comprising: a first electrode; a semiconductor substrate formed on said first electrode, said substrate having a major surface with a step portion slanted at an angle to a <110> crystal axis direction from a {001} crystal plane, said step portion having a first surface extending between two slanting surfaces with the first surface being parallel to the major surface and the slanting surfaces deviating from the {111} B crystal plane by several degrees; a first cladding layer made of first semiconductor material and formed on the first surface and slanting surfaces of the step portion of said semiconductor substrate; an active layer made of second semiconductor material formed on said first cladding layer and having different bandgaps for regions overlying the first surface and the slanting surfaces; a second cladding layer made of the second semiconductor material and formed on said active layer; and a second electrode formed on said second cladding layer, wherein at least one of said first cladding layer, said active layer and said second cladding layer includes phosphorus.
Claim 11
Dependent Claim
45 words
A light emitting device according to claim 8, wherein said angle that said major surface of said semiconductor substrate is slanted to the <110> crystal axis direction from the {001} crystal plane is in a range larger than 0 degree and smaller than 10 degrees.
Claim 12
Dependent Claim
29 words
A light emitting device according to claim 9, wherein at least one of said first cladding layer and said second cladding layer is made of AlGaInP based semiconductor material.
Claim 13
Dependent Claim
16 words
A light emitting device according to claim 10, wherein said semiconductor substrate is made of GaAs.
Claim 14
Dependent Claim
15 words
A light emitting device according to claim 8, wherein the step portion is a ridge.
Claim 15
Dependent Claim
15 words
A light emitting device according to claim 8, wherein the step portion is a groove.
Claim 16
Dependent Claim
37 words
A light emitting device according to claim 8, wherein the different bandgaps of the active layer are formed by the active layer having an ordered structure region over the first surface and between intermixed and disordered regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-22 | 1998-11-21 | 1999-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-22 | 2002-11-21 | 2003-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-22 | 2006-11-21 | 2007-05-23 | $7700.00 | Window Closed / Lapsed |