Semiconductor device and method of fabricating the same

Abstract

Abstract A process of forming an interlayer dielectric on a semiconductor substrate including an electronic element includes: forming first silicon oxide layer by reacting a silicon compound including hydrogen with hydrogen peroxide using a chemical vapor deposition method; forming a porous second silicon oxide layer by reacting between a compound including an impurity, silicon compounds, and at least one substance selected from oxygen and compounds including oxygen using a chemical vapor deposition method; and annealing at a temperature of 300° C. to 850° C. to make the first and second silicon oxide layers more fine-grained. The first silicon oxide layer is formed at a temperature that is lower than that required of a BPSG film, and it has superior self-flattening characteristics in itself.

Inventors

• 👤 Yukio Morozumi
• 👤 Michio Asahina
• 👤 Naohiro Moriya
• 👤 Kazuki Matsumoto
• 👤 Eiji Suzuki

Bibliographic Details