Semiconductor device manufacturing method and semiconductor manufacturing apparatus

Abstract

Abstract Translated from Japanese (57)【要約】 【課題】半導体装置の多層配線工程中の層間絶縁膜形成 工程にリフロー絶縁膜形成技術を採用した場合に得られ るリフロー絶縁膜の比誘電率を高くし、平坦性に優れた 層間絶縁膜を平坦化工程を行うことなく低コストで実現 する。 【解決手段】半導体基板３０上の絶縁膜３１上に配線パ ターン３２を形成する工程と、配線パターンを形成後の 半導体基板を収容した反応室内にＳｉＨ 4 ガスおよびＨ 2 Ｏ 2 を導入し、６６５Ｐａ以下の真空中、−１０℃以 上＋１０℃以下の温度範囲内で互いに反応させ、リフロ ー形状を有するリフローＳｉＯ 2 膜３４１を形成するリ フロー膜形成工程と、この工程に引き続き、反応室内に ＮＦ 3 ガスを導入し、所定の真空中でプラズマ放電させ てリフローＳｉＯ 2 膜の表面をプラズマ処理するプラズ マ処理工程と、この後、半導体基板に対して所定の熱処 理を行う熱処理工程とを具備する。 Kind Code: A1 Abstract: A reflow insulating film obtained by adopting a reflow insulating film forming technique in an interlayer insulating film forming process in a multilayer wiring process of a semiconductor device has a high relative dielectric constant and excellent flatness. It is possible to realize the interlayer insulating film at low cost without performing the flattening process. SOLUTION: A step of forming a wiring pattern 32 on an insulating film 31 on a semiconductor substrate 30, and SiH 4 gas and H in a reaction chamber containing the semiconductor substrate after the wiring pattern is formed. 2 O 2 is introduced and reacted with each other in a temperature range of −10 ° C. or higher and + 10 ° C. or lower in a vacuum of 665 Pa or less to form a reflow SiO 2 film 341 having a reflow shape. Subsequently, a plasma treatment step of introducing NF 3 gas into the reaction chamber and performing plasma discharge in a predetermined vacuum to perform plasma treatment on the surface of the reflow SiO 2 film, and thereafter heat treatment of subjecting the semiconductor substrate to a predetermined heat treatment And a process.

Inventors

• 👤 Takeshi Sunada
• 👤 武 砂田

Bibliographic Details