Method of fabricating liquid crystal display with increased aperture ratio

Claim 1

A method for fabricating a liquid crystal display having a thin film transistor and a storage capacitor, the method comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating layer over the substrate and the semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the active layer, and the gate electrode; and forming a storage electrode over the dielectric layer, wherein the dielectric layer is formed thinner than the gate insulating layer.

Claim 2

A method for fabricating a liquid crystal display having a thin film transistor and a storage capacitor, the method comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating layer over the substrate and the semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the active layer, and the gate electrode; and forming a storage electrode over the dielectric layer, wherein the dielectric layer is formed thinner than the gate insulating layer.

Claim 9

A method for fabricating a liquid crystal display having a thin film transistor and a storage capacitor, the method comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating layer over the substrate and the semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the active layer, and the gate electrode; forming a storage electrode over the dielectric layer; forming an interlayer insulating layer, having contact holes, on the dielectric layer, the contact holes exposing portions of the semiconductor layer; forming source and drain electrodes on the insulating layer and contacting the semiconductor layer through the contact holes, respectively; forming a passivation layer, having a contact hole, over the interlayer insulating layer and the source and drain electrodes, the contact hole exposing a portion of one of the source and drain electrodes; and forming a pixel electrode on the passivation layer and contacting the one of the source and drain electrodes through the contact hole, wherein the step of forming the drain electrode includes the step of extending the drain electrode over the storage electrode.

Claim 10

A method for fabricating a liquid crystal display having a thin film transistor and a storage capacitor, the method comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating layer over the substrate and the semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the active layer, and the gate electrode; forming a storage electrode over the dielectric layer; forming an interlayer insulating layer, having contact holes, on the dielectric layer, the contact holes exposing portions of the semiconductor layer; forming source and drain electrodes on the insulating layer and contacting the semiconductor layer through the contact holes, respectively; forming a passivation layer, having a contact hole, over the interlayer insulating layer and the source and drain electrodes, the contact hole exposing a portion of one of the source and drain electrodes; and forming a pixel electrode on the passivation layer and contacting the one of the source and drain electrodes through the contact hole, wherein the step of forming the drain electrode includes the step of extending the drain electrode over the storage electrode.

Claim 11

A method for fabricating a liquid crystal display including a thin film transistor and a storage capacitor, the method comprising the steps of: forming an active layer over a substrate; forming an impurity-doped semiconductor layer in a portion of the active layer; forming a gate insulating layer over the substrate, the semiconductor layer, and the impurity-doped semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the impurity-doped semiconductor layer, the active layer, and the gate electrode; forming a storage electrode on a portion of the dielectric layer; selectively doping impurities into a portion of the active layer to form source and drain regions of the thin film transistor; forming an interlayer insulating layer on the storage electrode, the dielectric layer, and the gate electrode; selectively etching the interlayer insulating layer and the dielectric layer to form a first contact hole exposing a portion of the impurity-doped semiconductor layer; forming source and drain electrodes connected to the source and drain regions of the impurity-doped semiconductor layer through the first contact hole, wherein the drain electrode is formed to overlap the storage electrode; forming a passivation layer on a resultant surface of the substrate; selectively etching the passivation layer to form a second contact hole exposing a portion of the drain electrode; and forming a pixel electrode contacting the drain electrode through the second contact hole, the pixel electrode overlapping the storage electrode.

Claim 12

A method for fabricating a liquid crystal display including a thin film transistor and a storage capacitor, the method comprising the steps of: forming an active layer over a substrate; forming an impurity-doped semiconductor layer in a portion of the active layer; forming a gate insulating layer over the substrate, the semiconductor layer, and the impurity-doped semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the impurity-doped semiconductor layer, the active layer, and the gate electrode; forming a storage electrode on a portion of the dielectric layer; selectively doping impurities into a portion of the active layer to form source and drain regions of the thin film transistor; forming an interlayer insulating layer on the storage electrode, the dielectric layer, and the gate electrode; selectively etching the interlayer insulating layer and the dielectric layer to form a first contact hole exposing a portion of the impurity-doped semiconductor layer; forming source and drain electrodes connected to the source and drain regions of the impurity-doped semiconductor layer through the first contact hole, wherein the drain electrode is formed to overlap the storage electrode; forming a passivation layer on a resultant surface of the substrate; selectively etching the passivation layer to form a second contact hole exposing a portion of the drain electrode; and forming a pixel electrode contacting the drain electrode through the second contact hole, the pixel electrode overlapping the storage electrode.

Claim 13

A method for fabricating a liquid crystal display including a thin film transistor and a storage capacitor, the method comprising the steps of: forming an active layer over a substrate; forming an impurity-doped semiconductor layer in a portion of the active layer; forming a gate insulating layer over the substrate, the semiconductor layer, and the impurity-doped semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the impurity-doped semiconductor layer, the active layer, and the gate electrode; forming a storage electrode on a portion of the dielectric layer; selectively doping impurities into a portion of the active layer to form source and drain regions of the thin film transistor; forming an interlayer insulating layer on the storage electrode, the dielectric layer, and the gate electrode; selectively etching the interlayer insulating layer and the dielectric layer to form a first contact hole exposing a portion of the impurity-doped semiconductor layer; forming source and drain electrodes connected to the source and drain regions of the impurity-doped semiconductor layer through the first contact hole; forming a passivation layer on a resultant surface of the substrate; selectively etching the passivation layer to form a second contact hole exposing a portion of the drain electrode; and forming a pixel electrode contacting the drain electrode through the second contact hole, the pixel electrode overlapping the storage electrode, wherein the, dielectric layer is formed thinner than the gate insulating layer.

Claim 14

A method for fabricating a liquid crystal display including a thin film transistor and a storage capacitor, the method comprising the steps of: forming an active layer over a substrate; forming an impurity-doped semiconductor layer in a portion of the active layer; forming a gate insulating layer over the substrate, the semiconductor layer, and the impurity-doped semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the impurity-doped semiconductor layer, the active layer, and the gate electrode; forming a storage electrode on a portion of the dielectric layer; selectively doping impurities into a portion of the active layer to form source and drain regions of the thin film transistor; forming an interlayer insulating layer on the storage electrode, the dielectric layer, and the gate electrode; selectively etching the interlayer insulating layer and the dielectric layer to form a first contact hole exposing a portion of the impurity-doped semiconductor layer; forming source and drain electrodes connected to the source and drain regions of the impurity-doped semiconductor layer through the first contact hole; forming a passivation layer on a resultant surface of the substrate; selectively etching the passivation layer to form a second contact hole exposing a portion of the drain electrode; and forming a pixel electrode contacting the drain electrode through the second contact hole, the pixel electrode overlapping the storage electrode, wherein the, dielectric layer is formed thinner than the gate insulating layer.

Claim 17

A method for fabricating a liquid crystal display having a thin film transistor and a storage capacitor, the method comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating layer over the substrate and the semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the active layer, and the gate electrode; and forming a storage electrode over the dielectric layer, wherein the dielectric layer is formed of one of Ti oxide, Ta oxide, barium titanate oxide, and PZT oxide and the dielectric layer is formed thinner than the gate insulating layer.

Claim 18

A method for fabricating a liquid crystal display having a thin film transistor and a storage capacitor, the method comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating layer over the substrate and the semiconductor layer; forming a gate electrode over the gate insulating layer; selectively etching an exposed portion of the gate insulating layer and leaving a portion of the gate insulating layer below the gate electrode; forming a dielectric layer over the substrate, the active layer, and the gate electrode; and forming a storage electrode over the dielectric layer, wherein the dielectric layer is formed of one of Ti oxide, Ta oxide, barium titanate oxide, and PZT oxide and the dielectric layer is formed thinner than the gate insulating layer.