Abstract A semiconductor memory device is provided which includes a memory cell array, a read circuit which reads data from said memory cell array, and an external terminal which receives an external clock signal. A first input circuit receives the external clock signal and outputs a first internal clock signal delayed from the external clock signal. A second input circuit receives the first internal clock signal and outputs a second internal clock signal delayed from the first internal clock signal. The memory device also includes a circuit which counts a clock signal having a frequency higher than that of the external clock signal and a circuit which starts the counting in response to the second internal clock signal, reverses the direction of said counting in response to the first internal clock signal and detects when a count of said counting circuit again reaches the count at the start of said counting, thereby outputting a timing signal therefrom. A clock output circuit is provided which outputs a third internal clock signal for controlling the operation of said read circuit based on the timing signal.
A semiconductor memory device comprising: a memory cell array; a read circuit which reads data from said memory cell array; an external terminal which receives an external clock signal; a first input circuit which receives the external clock signal therein and outputs a first internal clock signal delayed from the external clock signal; a second input circuit which receives the first internal clock signal therein and outputs a second internal clock signal delayed from the first internal clock signal; a circuit which counts a clock signal having a frequency higher than that of the external clock signal; a circuit which starts said counting in response to the second internal clock signal, reverses the direction of said counting in response to the first internal clock signal and detects when a count of said counting circuit again reaches the count at the start of said counting, thereby outputting a timing signal therefrom; and a clock output circuit which outputs a third internal clock signal for controlling the operation of said read circuit based on the timing signal.
Claim 2
Dependent Claim
175 words
A semiconductor memory device comprising: a memory cell array; a read circuit which reads data from said memory cell array; an external terminal which receives an external clock signal; a first input circuit which receives the external clock signal therein and outputs a first internal clock signal delayed from the external clock signal; a second input circuit which receives the first internal clock signal therein and outputs a second internal clock signal delayed from the first internal clock signal; a circuit which counts a clock signal having a frequency higher than that of the external clock signal; a circuit which starts said counting in response to the second internal clock signal, reverses the direction of said counting in response to the first internal clock signal and detects when a count of said counting circuit again reaches the count at the start of said counting, thereby outputting a timing signal therefrom; and a clock output circuit which outputs a third internal clock signal for controlling the operation of said read circuit based on the timing signal.
Claim 3
Dependent Claim
28 words
A semiconductor memory device according to claim 1, further comprising: a circuit which produces a clock signal having a frequency higher than that of said external clock signal.
Claim 4
Dependent Claim
32 words
A semiconductor memory device according to claim 1, wherein said timing signal is produced so that rise timing of the external clock signal coincides with that of the third internal clock signal.
Claim 5
Dependent Claim
47 words
A semiconductor memory device according to claim 1, wherein a delay time corresponding to said second input circuit is set so as to correspond to the sum of a delay time corresponding to said first input circuit and a delay time corresponding to said clock output circuit.