Patent US5279868A successfully refreshed from Google Patents.
Patent US6100954A successfully refreshed from Google Patents.
US6100954A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing
Assignee: LG Display Co Ltd
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Filing: 1997-03-25
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Granted: 2000-08-08
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Expires: 2017-03-25
Abstract
Abstract A thin film transistor substrate for a liquid crystal display includes a substrate; a thin film transistor over the substrate, the thin film transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer; and a protection film over the thin film transistor, the protection film including at least one of fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB.
Inventors
- 👤 Jeong-Hyun Kim
- 👤 Woong-Kwon Kim
- 👤 Ki-Hyun Lyu
- 👤 Sung-il Park
- 👤 Kyoung-Nam Lim
- 👤 Hoo-Young Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/133345; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6725; H10D30/6729; H10D30/673; H10D30/6732; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10W; H10W74/00; H10W74/40; H10W74/47; G02F1/133357; G02F1/136; G02F1/1362; G02F1/1368; G02F2202/00; G02F2202/10; G02F2202/104
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
146 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a first inorganic layer between the protection film and the transistor; forming a second inorganic layer between the gate insulation layer and the semiconductor layer; forming a third inorganic layer over the protection film; and forming a pixel electrode over the third inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 2
Independent Claim
146 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a first inorganic layer between the protection film and the transistor; forming a second inorganic layer between the gate insulation layer and the semiconductor layer; forming a third inorganic layer over the protection film; and forming a pixel electrode over the third inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 3
Independent Claim
119 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: providing a substrate; forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a first inorganic layer between the gate insulation layer and the semiconductor layer; forming a protection film over the transistor; forming a second inorganic layer over the protection film; and forming a pixel electrode over the second inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 4
Independent Claim
119 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: providing a substrate; forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a first inorganic layer between the gate insulation layer and the semiconductor layer; forming a protection film over the transistor; forming a second inorganic layer over the protection film; and forming a pixel electrode over the second inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 5
Dependent Claim
183 words
A transistor substrate for a liquid crystal display comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a protection film over the transistor, the protection film having a contact hole and including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a gate bus line connected to the gate of the transistor; a signal bus line connected to one of the source and the drain of the transistor; and a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor through the contact hole, wherein at least one of the gate bus line and signal bus line is located under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 6
Dependent Claim
183 words
A transistor substrate for a liquid crystal display comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a protection film over the transistor, the protection film having a contact hole and including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a gate bus line connected to the gate of the transistor; a signal bus line connected to one of the source and the drain of the transistor; and a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor through the contact hole, wherein at least one of the gate bus line and signal bus line is located under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 7
Dependent Claim
89 words
The transistor substrate according to claim 3, wherein the gate insulation layer has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the gate insulation layer being substantially flatter than the first surface of the gate insulation layer, and wherein the protection film has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the protection film being substantially flatter than the first surface of the protection film.
Claim 8
Dependent Claim
34 words
The transistor substrate according to claim 3, further comprising: a first inorganic layer between the protection film and the transistor; and a second inorganic layer between the gate insulation layer and the semiconductor layer.
Claim 9
Dependent Claim
26 words
The transistor substrate according to claim 3, further comprising a third inorganic layer over the protection film, the third inorganic layer being under the pixel electrode.
Claim 10
Independent Claim
188 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a gate bus line connected to the gate of the transistor; forming a signal bus line connected to one of the source and the drain of the transistor; and forming a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor, wherein at least one of the gate bus line and signal bus line is formed under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 11
Independent Claim
188 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a gate bus line connected to the gate of the transistor; forming a signal bus line connected to one of the source and the drain of the transistor; and forming a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor, wherein at least one of the gate bus line and signal bus line is formed under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 12
Dependent Claim
95 words
The method for manufacturing a transistor on a substrate according to claim 7, wherein the gate insulation layer has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the gate insulation layer being substantially flatter than the first surface of the gate insulation layer, and wherein the protection film has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the protection film being substantially flatter than the first surface of the protection film.
Claim 13
Dependent Claim
47 words
The method for manufacturing a transistor on a substrate according to claim 7, the method further comprising the steps of: forming a first inorganic layer between the protection film and the transistor; and forming a second inorganic layer between the gate insulation layer and the semiconductor layer.
Claim 14
Dependent Claim
39 words
The method for manufacturing a transistor on a substrate according to claim 7, the method further comprising the step of: forming a third inorganic layer over the protection film, the third inorganic layer being located under the pixel electrode.
Claim 15
Dependent Claim
131 words
A transistor substrate for a liquid crystal display, comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a first inorganic layer between the protection film and the transistor; a second inorganic layer between the gate insulation layer and the semiconductor layer; a third inorganic layer over the protection film; and a pixel electrode over the third inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 16
Dependent Claim
131 words
A transistor substrate for a liquid crystal display, comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a first inorganic layer between the protection film and the transistor; a second inorganic layer between the gate insulation layer and the semiconductor layer; a third inorganic layer over the protection film; and a pixel electrode over the third inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 17
Dependent Claim
105 words
A transistor substrate for a liquid crystal display, comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, the gate insulation layer including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB, the transistor further including a first inorganic layer between the gate insulation layer and the semiconductor layer; a protection film over the transistor; a second inorganic layer over the protection film; and a pixel electrode over the second inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 18
Dependent Claim
105 words
A transistor substrate for a liquid crystal display, comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, the gate insulation layer including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB, the transistor further including a first inorganic layer between the gate insulation layer and the semiconductor layer; a protection film over the transistor; a second inorganic layer over the protection film; and a pixel electrode over the second inorganic layer, the pixel electrode being connected to one of the source and the drain.
Claim 19
Dependent Claim
172 words
A transistor substrate for a liquid crystal display comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes an organic insulation material; a protection film over the transistor, the protection film having a contact hole and including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a gate bus line connected to the gate of the transistor; a signal bus line connected to one of the source and the drain of the transistor; and a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and drain of the transistor through the contact hole, wherein at least one of the gate bus line and signal bus line is located under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 20
Dependent Claim
172 words
A transistor substrate for a liquid crystal display comprising: a substrate; a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes an organic insulation material; a protection film over the transistor, the protection film having a contact hole and including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; a gate bus line connected to the gate of the transistor; a signal bus line connected to one of the source and the drain of the transistor; and a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and drain of the transistor through the contact hole, wherein at least one of the gate bus line and signal bus line is located under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 21
Dependent Claim
49 words
The transistor substrate according to claim 13, wherein the gate insulation layer has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the gate insulation layer being substantially flatter than the first surface of the gate insulation layer.
Claim 22
Dependent Claim
26 words
The transistor substrate according to claim 14, wherein the gate insulation layer is over the gate, and the semiconductor layer is over the gate insulation layer.
Claim 23
Dependent Claim
46 words
The transistor substrate according to claim 14, wherein the protection film has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the protection film being substantially flatter than the first surface of the protection film.
Claim 24
Dependent Claim
34 words
The transistor substrate according to claim 13, further comprising: a first inorganic layer between the protection film and the transistor; and a second inorganic layer between the gate insulation layer and the semiconductor layer.
Claim 25
Dependent Claim
26 words
The transistor substrate according to claim 13, further comprising a third inorganic layer over the protection film, the third inorganic layer being under the pixel electrode.
Claim 26
Independent Claim
178 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes an organic insulation material; forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a gate bus line connected to the gate of the transistor; forming a signal bus line connected to one of the source and the drain of the transistor; and forming a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor, wherein at least one of the gate bus line and signal bus line is formed under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 27
Independent Claim
178 words
A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of: forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes an organic insulation material; forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB; forming a gate bus line connected to the gate of the transistor; forming a signal bus line connected to one of the source and the drain of the transistor; and forming a pixel electrode over the protection film, the pixel electrode being connected to another one of the source and the drain of the transistor, wherein at least one of the gate bus line and signal bus line is formed under the protection film, and the pixel electrode overlaps at least a portion of one of the gate bus line and the signal bus line located under the protection film.
Claim 28
Dependent Claim
48 words
The method according to claim 19, wherein the gate insulation layer has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the gate insulation layer being substantially flatter than the first surface of the gate insulation layer.
Claim 29
Dependent Claim
41 words
The method according to claim 20, wherein the step of forming the transistor includes the steps of: forming the gate over the substrate; forming the gate insulation layer over the gate; and forming the semiconductor layer over the gate insulation layer.
Claim 30
Dependent Claim
45 words
The method according to claim 20, wherein the protection film has a first surface facing toward the substrate and a second surface facing away from the substrate, the second surface of the protection film being substantially flatter than the first surface of the protection film.
Claim 31
Dependent Claim
38 words
The method according to claim 19, further comprising the steps of: forming a first inorganic layer between the protection film and the transistor; and forming a second inorganic layer between the gate insulation layer and the semiconductor layer.
Claim 32
Dependent Claim
30 words
The method according to claim 19, further comprising the step of: forming a third inorganic layer over the protection film, the third inorganic layer being located under the pixel electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |