US5294820A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field-effect transistor
Assignee: Toshiba Corp
•
Filing: 1992-02-07
•
Granted: 1994-03-15
•
Expires: 2012-02-07
Abstract
Abstract A field-effect transistor comprising a semiconductor substrate having source and drain regions and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate and the gate electrode. When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate.
Inventors
- 👤 Nobuhiro Gemma
- 👤 Koichi Mizushima
- 👤 Akira Miura
- 👤 Makoto Azuma
- 👤 Toshio Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
39 words
A field-effect transistor comprising a silicon substrate having a source region and a drain region, and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between said silicon substrate and said gate electrode.
Claim 2
Dependent Claim
39 words
A field-effect transistor comprising a silicon substrate having a source region and a drain region, and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between said silicon substrate and said gate electrode.
Claim 3
Dependent Claim
32 words
A transistor according to claim 1, wherein said thin organic film consists of a stacking structure of a first thin film including donor molecules and a second thin film including acceptor molecules.
Claim 4
Dependent Claim
25 words
A transistor according to claim 1, wherein said thin organic film consists of a single thin film including both of the donor and acceptor molecules.
Claim 5
Dependent Claim
42 words
A transistor according to claim 1, wherein said thin organic film consists of a super lattice structure obtained by stacking repeatedly a plurality of stacking structures of the first thin film including donor molecules and the second thin film including acceptor molecules.
Claim 6
Dependent Claim
42 words
A transistor according to claim 1, wherein said thin organic film consists of a stacking structure of a first thin film including a plurality of types of donor molecules and a second thin film including a plurality of types of acceptor molecules.
Claim 7
Dependent Claim
53 words
A transistor according to claim 1, wherein said thin organic film consists of a structure obtained by sequentially stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film including other acceptor molecules having an electronic affinity larger than that of said acceptor molecules.
Claim 8
Dependent Claim
62 words
A transistor according to claim 1, wherein said thin organic film consists of a structure obtained by sequentially stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film interposed between the first and second thin films and including other donor molecules having an ionization potential larger than that of said donor molecules.
Claim 9
Dependent Claim
28 words
A transistor according to claim 1, wherein a thin film including insulating organic molecules is formed on at least one of the surfaces of said thin organic film.
Claim 10
Dependent Claim
22 words
A transistor according to claim 1, wherein said thin organic film is formed on said silicon substrate through an inorganic insulating film.
Claim 11
Dependent Claim
18 words
A transistor according to claim 8, wherein said thin organic film is formed directly on said silicon substrate.
Claim 12
Dependent Claim
49 words
A transistor according to claim 1, wherein said thin organic film consists of a structure obtained by stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film interposed between the first and second thin films and including insulating molecules.
Claim 13
Dependent Claim
22 words
A transistor according to claim 1, wherein said thin organic film includes organic molecules having a donor radical and an acceptor radical.
Claim 14
Dependent Claim
17 words
A transistor according to claim 1, wherein said thin organic film is formed by the Langmuir-Blodgett process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-14 | 1997-09-13 | 1998-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-14 | 2001-09-13 | 2002-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-14 | 2005-09-13 | 2006-03-15 | $7700.00 | Window Closed / Lapsed |