Patent US6100166A successfully refreshed from Google Patents.
US6100166A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing semiconductor article
Assignee: Canon Inc
•
Filing: 1997-12-18
•
Granted: 2000-08-08
•
Expires: 2017-12-18
Abstract
Abstract A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
- 👤 Shoji Nishida
- 👤 Kenji Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 05:05
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1924; B; B28; B28D; B28D5/00; H10F; H10F10/00; H10F10/10; H10F10/14; H10F71/00; H10F71/121; H10F71/139; H10P10/00; H10P10/12; H10P10/128; H10P52/00; H10P74/00; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136277; H10P72/00; H10P72/70; H10P72/74; H10P72/7432; H10P72/7434; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 82
Claim 1
Independent Claim
60 words
A process for producing a semiconductor article comprising the steps of: bonding a flexible film onto a porous semiconductor layer on a surface of a substrate; and applying a force to the flexible film in a peeling direction so as to separate the porous semiconductor layer from the substrate; whereby the porous semiconductor layer is transferred onto the flexible film.
Claim 2
Dependent Claim
60 words
A process for producing a semiconductor article comprising the steps of: bonding a flexible film onto a porous semiconductor layer on a surface of a substrate; and applying a force to the flexible film in a peeling direction so as to separate the porous semiconductor layer from the substrate; whereby the porous semiconductor layer is transferred onto the flexible film.
Claim 3
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 1, wherein the film is comprised of a resin film.
Claim 4
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 1, wherein the film is comprised of an electroconductive film.
Claim 5
Dependent Claim
16 words
The process for producing a semiconductor article according to claim 1, wherein the film is adherent.
Claim 6
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 1, wherein the film is bonded with interposition of an adhesive to the substrate.
Claim 7
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 1, wherein the film has a thickness ranging from 5 μm to 3 cm.
Claim 8
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 6, wherein the film has a thickness ranging from 10 μm to 1 cm.
Claim 9
Dependent Claim
25 words
The process for producing a semiconductor article according to claim 1, wherein the substrate is prepared by making partially porous a single crystal silicon substrate.
Claim 10
Dependent Claim
19 words
The process for producing a semiconductor article according to claim 8, wherein the substrate is made porous by anodization.
Claim 11
Dependent Claim
49 words
The process for producing a semiconductor article according to claim 1, wherein another porous semiconductor layer is formed on the substrate after removal of the porous layer remaining on the side of the substrate after the separation of the film, and another film is bonded again to the substrate.
Claim 12
Dependent Claim
69 words
A process for producing a semiconductor article comprising the steps of: bonding a flexible film onto a nonporous semiconductor layer on a porous semiconductor layer of a first substrate; and applying a force to the flexible film in a peeling direction so as to separate the nonporous semiconductor layer from the first substrate at the porous semiconductor layer; whereby the nonporous semiconductor layer is transferred onto the flexible film.
Claim 13
Dependent Claim
69 words
A process for producing a semiconductor article comprising the steps of: bonding a flexible film onto a nonporous semiconductor layer on a porous semiconductor layer of a first substrate; and applying a force to the flexible film in a peeling direction so as to separate the nonporous semiconductor layer from the first substrate at the porous semiconductor layer; whereby the nonporous semiconductor layer is transferred onto the flexible film.
Claim 14
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 11, wherein the film is comprised of a resin film.
Claim 15
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 11, wherein the film is comprised of an electroconductive film.
Claim 16
Dependent Claim
16 words
The process for producing a semiconductor article according to claim 11, wherein the film is adherent.
Claim 17
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 11, wherein the film is bonded with interposition of an adhesive to the substrate.
Claim 18
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 11, wherein the film has a thickness ranging from 5 μm to 3 cm.
Claim 19
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 16, wherein the film has a thickness ranging from 10 μm to 1 cm.
Claim 20
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 11, wherein the first substrate is formed from a silicon substrate.
Claim 21
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 18, wherein the silicon substrate is a single crystal silicon substrate.
Claim 22
Dependent Claim
43 words
The process for producing a semiconductor article according to claim 19, wherein the first substrate is prepared by making partially porous the single crystal silicon substrate to form the porous semiconductor layer, and forming the nonporous semiconductor layer on the porous semiconductor layer.
Claim 23
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 20, wherein the nonporous semiconductor layer is formed from silicon.
Claim 24
Dependent Claim
22 words
The process for producing a semiconductor article according to claim 20, wherein the nonporous semiconductor layer is formed from a compound semiconductor.
Claim 25
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 20, wherein the nonporous semiconductor layer is formed by epitaxial growth.
Claim 26
Dependent Claim
44 words
The process for producing a semiconductor article according to claim 19, wherein the first substrate is formed by implanting ions into the interior of the single crystal silicon substrate to form the porous layer in the interior with the ion implantation surface kept nonporous.
Claim 27
Dependent Claim
27 words
The process for producing a semiconductor article according to claim 24, wherein the ions are selected from the group of ions of rare gases, hydrogen, and nitrogen.
Claim 28
Dependent Claim
35 words
The process for producing a semiconductor article according to claim 24, wherein an insulation layer is formed on the single crystal silicon substrate, and the ions are implanted from the side of the insulation layer.
Claim 29
Dependent Claim
19 words
The process for producing a semiconductor article according to claim 11, wherein the porous layer is formed by anodization.
Claim 30
Dependent Claim
39 words
The process for producing a semiconductor article according to claim 27, wherein the porous layer is formed in a multiple layer structure by changing the electric current density during the anodization to change the porosity of the porous layer.
Claim 31
Dependent Claim
20 words
A process for producing a semiconductor article according to claim 11, which is applied to production of a solar cell.
Claim 32
Dependent Claim
71 words
The process for producing a semiconductor article according to claim 29, comprising steps of preparing the first substrate by forming the porous semiconductor layer by making the silicon substrate porous partially, and forming the nonporous semiconductor layer on the porous semiconductor layer; bonding the film onto the nonporous semiconductor layer; and separating the nonporous semiconductor layer by applying a force in a direction of peeling the film from the first substrate.
Claim 33
Dependent Claim
40 words
The process for producing a semiconductor article according to claim 30, wherein the substrate obtained by removal of the porous semiconductor layer remaining on the first substrate after the separation step is reused as the material of the first substrate.
Claim 34
Dependent Claim
41 words
The process for producing a semiconductor article according to claim 30, wherein a semiconductor junction is formed, after the separation of the layers, on the nonporous semiconductor layer bared by removal of the porous semiconductor layer remaining on the film side.
Claim 35
Dependent Claim
31 words
The process for producing a semiconductor article according to claim 30, wherein a semiconductor junction is formed in the step of forming the nonporous semiconductor layer on the porous semiconductor layer.
Claim 36
Dependent Claim
38 words
The process for producing a semiconductor article according to claim 30, wherein both the front face and the reverse face of the silicon substrate are made porous, and the subsequent steps are conducted on both of the faces.
Claim 37
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 30, wherein the silicon substrate is comprised of single crystal silicon.
Claim 38
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 30, wherein the silicon substrate is comprised of polycrystal silicon.
Claim 39
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 30, wherein the silicon substrate is comprised of metallurgical grade silicon.
Claim 40
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 30, wherein silicon is used as the nonporous semiconductor layer.
Claim 41
Dependent Claim
22 words
The process for producing a semiconductor article according to claim 30, wherein a compound semiconductor is used as the nonporous semiconductor layer.
Claim 42
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 30, wherein a heat-resistant film is used as the film.
Claim 43
Dependent Claim
25 words
The process for producing a semiconductor article according to claim 40, wherein the film is heat-resistant at a temperature of not higher than 400° C.
Claim 44
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 30, wherein the heat-resistant film is a high polymer film.
Claim 45
Dependent Claim
26 words
The process for producing a semiconductor article according to claim 30, wherein the nonporous semiconductor and the film is bonded with interposition of an electroconductive paste.
Claim 46
Dependent Claim
17 words
The process for producing a semiconductor article according to claim 43, wherein the electroconductive paste is fired.
Claim 47
Dependent Claim
80 words
A process for producing a semiconductor article comprising the steps of: bonding a flexible film onto a nonporous semiconductor layer on a porous semiconductor layer of a first substrate; applying a force to the flexible film in a peeling direction, so that the nonporous semiconductor layer is separated from the first substrate at the porous semiconductor layer; and bonding the separated nonporous semiconductor layer on to a second substrate; whereby the nonporous semiconductor layer is transferred onto the second substrate.
Claim 48
Dependent Claim
80 words
A process for producing a semiconductor article comprising the steps of: bonding a flexible film onto a nonporous semiconductor layer on a porous semiconductor layer of a first substrate; applying a force to the flexible film in a peeling direction, so that the nonporous semiconductor layer is separated from the first substrate at the porous semiconductor layer; and bonding the separated nonporous semiconductor layer on to a second substrate; whereby the nonporous semiconductor layer is transferred onto the second substrate.
Claim 49
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 45, wherein the film is comprised of a resin film.
Claim 50
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 45, wherein the film is comprised of an electroconductive film.
Claim 51
Dependent Claim
16 words
The process for producing a semiconductor article according to claim 45, wherein the film is adherent.
Claim 52
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 45, wherein the film is bonded with interposition of an adhesive to the substrate.
Claim 53
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 45, wherein the film has a thickness ranging from 5 μm to 3 cm.
Claim 54
Dependent Claim
24 words
The process for producing a semiconductor article according to claim 50, wherein the film has a thickness ranging from 10 μm to 1 cm.
Claim 55
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 45, wherein the first substrate is formed from a silicon substrate.
Claim 56
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 52, wherein the silicon substrate is a single crystal silicon substrate.
Claim 57
Dependent Claim
43 words
The process for producing a semiconductor article according to claim 53, wherein the first substrate is prepared by making partially porous the single crystal silicon substrate to form the porous semiconductor layer, and forming the nonporous semiconductor layer on the porous semiconductor layer.
Claim 58
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 54, wherein the nonporous semiconductor layer is formed from silicon.
Claim 59
Dependent Claim
22 words
The process for producing a semiconductor article according to claim 54, wherein the nonporous semiconductor layer is formed from a compound semiconductor.
Claim 60
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 54, wherein the nonporous semiconductor layer is formed by epitaxial growth.
Claim 61
Dependent Claim
37 words
The process for producing a semiconductor article according to claim 54, wherein an insulation layer is formed on the surface of the nonporous semiconductor layer, and the film is bonded to the surface of the insulation layer.
Claim 62
Dependent Claim
44 words
The process for producing a semiconductor article according to claim 53, wherein the first substrate is formed by implanting ions into the interior of the single crystal silicon substrate to form the porous layer in the interior with the ion implantation surface kept nonporous.
Claim 63
Dependent Claim
27 words
The process for producing a semiconductor article according to claim 59, wherein the ions are selected from the group of ions of rare gases, hydrogen, and nitrogen.
Claim 64
Dependent Claim
35 words
The process for producing a semiconductor article according to claim 59, wherein an insulation layer is formed on the single crystal silicon substrate, and the ions are implanted from the side of the insulation layer.
Claim 65
Dependent Claim
20 words
The process for producing a semiconductor article according to claim 61, wherein the film is bonded to the insulation layer.
Claim 66
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 45, wherein a silicon substrate is used as the second substrate.
Claim 67
Dependent Claim
27 words
The process for producing a semiconductor article according to claim 63, wherein a silicon substrate having an insulation layer formed thereon is used as the second substrate.
Claim 68
Dependent Claim
21 words
The process for producing a semiconductor article according to claim 45, wherein a light-transmissive substrate is used as the second substrate.
Claim 69
Dependent Claim
39 words
The process for producing a semiconductor article according to claim 45, wherein the nonporous semiconductor layer on the separated film is bonded to a supporting member, and further bonded to the second substrate with the supporting member kept bonded.
Claim 70
Dependent Claim
44 words
The process for producing a semiconductor article according to claim 66, wherein the nonporous layer which is held on the separated film and bared by removal of the remaining porous layer from the surface of the nonporous layer is bonded to the supporting member.
Claim 71
Dependent Claim
33 words
The process for producing a semiconductor article according to claim 66, wherein the porous layer remaining on the surface of the nonporous layer on the separated film is bonded to the supporting member.
Claim 72
Dependent Claim
29 words
The process for producing a semiconductor article according to claim 66, wherein the supporting member is removed after the bonding of the nonporous semiconductor layer onto the second substrate.
Claim 73
Dependent Claim
26 words
The process for producing a semiconductor article according to claim 45, wherein the film is removed after the nonporous layer is bonded to the second substrate.
Claim 74
Dependent Claim
19 words
The process for producing a semiconductor article according to claim 54, wherein the porous layer is formed by anodization.
Claim 75
Dependent Claim
39 words
The process for producing a semiconductor article according to claim 71, wherein the porous layer is formed in a multiple layer structure by changing the electric current density during the anodization to change the porosity of the porous layer.
Claim 76
Dependent Claim
38 words
The process for producing a semiconductor article according to claim 54, wherein both the front face and the reverse face of the silicon substrate are made porous, and the subsequent steps are conducted on both of the faces.
Claim 77
Dependent Claim
40 words
The process for producing a semiconductor article according to claim 45, wherein the substrate obtained by removal of the porous semiconductor layer remaining on the first substrate after the separation step is reused as the material for the first substrate.
Claim 78
Dependent Claim
40 words
The process for producing a semiconductor article according to claim 45, wherein the substrate obtained by removal of the porous semiconductor layer remaining on the first substrate after the separation step is reused as the material for the second substrate.
Claim 79
Dependent Claim
102 words
A process for producing a semiconductor article comprising the steps of: implanting ions of rare gas, hydrogen or nitrogen into a semiconductor substrate so as to form an implanted layer beneath a nonporous surface of the semiconductor substrate so that the nonporous surface of the semiconductor substrate becomes a nonporous semiconductor layer; bonding a flexible film onto the nonporous surface of the semiconductor substrate; and applying a force to the flexible film in a peeling direction so as to separate the nonporous semiconductor layer from the substrate at the implanted layer; whereby the nonporous semiconductor layer is transferred onto the flexible film.
Claim 80
Dependent Claim
102 words
A process for producing a semiconductor article comprising the steps of: implanting ions of rare gas, hydrogen or nitrogen into a semiconductor substrate so as to form an implanted layer beneath a nonporous surface of the semiconductor substrate so that the nonporous surface of the semiconductor substrate becomes a nonporous semiconductor layer; bonding a flexible film onto the nonporous surface of the semiconductor substrate; and applying a force to the flexible film in a peeling direction so as to separate the nonporous semiconductor layer from the substrate at the implanted layer; whereby the nonporous semiconductor layer is transferred onto the flexible film.
Claim 81
Dependent Claim
45 words
A process according to claim 11 or 45, wherein said process further comprises the step of forming an insulating layer on the surface of the nonporous semiconductor layer, and wherein the flexible film is bonded onto the nonporous semiconductor layer with an insulating layer therebetween.
Claim 82
Dependent Claim
40 words
A process according to claim 76, wherein said process further comprises the step of forming an insulating layer on the surface of the semiconductor substrate, and wherein the flexible film is bonded onto the nonporous surface of the insulating layer.
References Cited (Backward Citations)
DE1289831B
Cited
US4816420A
Cited
US4445965A
Cited
US4582559A
Cited
US5273938A
Cited
JPH0521338A
Cited
US5618739A
Cited
JPH05211128A
Cited
US5670411A
Cited
US5397713A
Cited
JPH0645622A
Cited
US5391257A
Cited
US5695557A
Cited
JPH07302889A
Cited
JPH08213645A
Cited
EP0757377A2
Cited
EP0793263A2
Cited
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