Patent US6096646A successfully refreshed from Google Patents.
US6096646A
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Method for forming metal line of semiconductor device
Assignee: SK Hynix Inc
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Filing: 1998-03-27
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Granted: 2000-08-01
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Expires: 2018-03-27
Abstract
Abstract A method for forming metal line of a semiconductor device in which, if the aspect ratio of the contact holes is big, contact holes are buried with a CVD method using the HDP method, and the line process is simplified to improve the reliability is disclosed, including the steps of forming an insulating film having a contact hole on a semiconductor substrate; forming a barrier metal layer on the insulating film including the contact hole; and forming a metal line layer on the barrier metal layer with a CVD method using a high density plasma.
Inventors
- 👤 Chang Jae Lee
- 👤 Nae Hak Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
94 words
A method for forming a metal line of a semiconductor device comprising forming an insulating film having a contact hole on a semiconductor substrate; forming a barrier layer on the insulating film including the contact hole; depositing a metal layer by metal ions and etching the metal layer by inert gas repeatedly via a high density plasma CVD method using metal source gas and inert gas so that the contact hole is buried and the metal layer is formed at the same time; and forming a metal line by patterning the metal layer selectively.
Claim 2
Independent Claim
94 words
A method for forming a metal line of a semiconductor device comprising forming an insulating film having a contact hole on a semiconductor substrate; forming a barrier layer on the insulating film including the contact hole; depositing a metal layer by metal ions and etching the metal layer by inert gas repeatedly via a high density plasma CVD method using metal source gas and inert gas so that the contact hole is buried and the metal layer is formed at the same time; and forming a metal line by patterning the metal layer selectively.
Claim 3
Dependent Claim
17 words
The method as claimed in claim 1, wherein the metal layer is made of aluminum or copper.
Claim 4
Dependent Claim
32 words
The method as claimed in claim 1, wherein the source gas is formed by using a mixture gas of TIBA (triisobutyl aluminum), DMAH (dimethyl aluminum hydride), and DMEAA (dimethyl ethyl amine alanine).
Claim 5
Dependent Claim
30 words
The method as claimed in claim 1, wherein the CVD method using the high density plasma is performed in a high density plasma chamber at a temperature of 150˜200° C.
Claim 6
Dependent Claim
30 words
The method as claimed in claim 1, wherein the CVD method using the high density plasma is performed in a high density plasma chamber under a pressure of 0.5˜5 Torr.
Claim 7
Dependent Claim
33 words
The method as claimed in claim 1, wherein the CVD method using the high density plasma is performed in a high density plasma chamber by an RF power of bigger than 100 W.
Claim 8
Dependent Claim
23 words
The method as claimed in claim 1, wherein the inert gas is any one of argon, helium, and hydrogen gas (H 2 ).
Claim 9
Dependent Claim
10 words
The method as claimed in claim 1, wherein the metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-01 | 2004-01-31 | 2004-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-01 | 2008-01-31 | 2008-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-01 | 2012-01-31 | 2012-08-01 | $7700.00 | Window Closed / Lapsed |