US5492734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming deposition film
Assignee: Canon Inc
•
Filing: 1994-06-17
•
Granted: 1996-02-20
•
Expires: 2014-06-17
Abstract
Abstract This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7×10 -3 Torr to 9×10 -2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450° C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.
Inventors
- 👤 Shigeyuki Matsumoto
- 👤 Osamu Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; C; C23; C23C; C23C16/00; C23C16/04; C23C16/06; C23C16/18; C23C16/20; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
175 words
A method of forming a deposition film, comprising steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from less than a decomposition temperature of the alkylaluminum hydride to 450° C.; generating the plasma in said CVD apparatus while the gas of the alkylaluminum hydride is supplied, and forming said metal film consisting essentially of aluminum and a metal film containing aluminum as a major constituent on said non-electron donor surface, wherein the plasma having a plasma area having an electron density of the plasma falling within a range of 5×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
Claim 2
Independent Claim
175 words
A method of forming a deposition film, comprising steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from less than a decomposition temperature of the alkylaluminum hydride to 450° C.; generating the plasma in said CVD apparatus while the gas of the alkylaluminum hydride is supplied, and forming said metal film consisting essentially of aluminum and a metal film containing aluminum as a major constituent on said non-electron donor surface, wherein the plasma having a plasma area having an electron density of the plasma falling within a range of 5×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein the alkylaluminum hydride is dimethylaluminum hydride.
Claim 4
Dependent Claim
33 words
A method according to claim 1, wherein the electron density of the plasma falls within a range of 5×10 8 cm -3 to 2×10 9 cm -3 near said surface of said substrate.
Claim 5
Independent Claim
179 words
A method of forming a deposition film, comprising the steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space so that a partial pressure of the gas of alkylaluminum hydride falls within a range of 7×10 -3 to 9×10 -2 Torr; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from no less than a decomposition temperature of the alkylaluminum hydride to 450° C.; and generating the plasma in said CVD apparatus while the alkylaluminum hydride is supplied, and forming a metal film consisting essentially of aluminum on said non-electron donor surface, wherein the plasma having an electron density within a range of 1×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
Claim 6
Independent Claim
179 words
A method of forming a deposition film, comprising the steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space so that a partial pressure of the gas of alkylaluminum hydride falls within a range of 7×10 -3 to 9×10 -2 Torr; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from no less than a decomposition temperature of the alkylaluminum hydride to 450° C.; and generating the plasma in said CVD apparatus while the alkylaluminum hydride is supplied, and forming a metal film consisting essentially of aluminum on said non-electron donor surface, wherein the plasma having an electron density within a range of 1×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
References Cited (Backward Citations)
GB882214A
Cited
GB2041983A
Cited
US4861623A
Cited
EP0255454A2
Cited
JPS63239195A
Cited
JPH01283374A
Cited
EP0417997A1
Cited
EP0425084A1
Cited
EP0420595A2
Cited
US5091210A
Cited
US5154949A
Cited
US5151305A
Cited
US5330633A
Cited
US5208187A
Cited
US5364664A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-19 | 1999-08-21 | 2000-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-19 | 2007-08-21 | 2008-02-20 | $7700.00 | Window Closed / Lapsed |