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Patent US5492734A successfully refreshed from Google Patents.
US5492734A
Expired / Lapsed
US
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Method of forming deposition film
Assignee: Canon Inc
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Filing: 1994-06-17
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Granted: 1996-02-20
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Expires: 2014-06-17
Abstract
Abstract This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7×10 -3 Torr to 9×10 -2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450° C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.
Inventors
- 👤 Shigeyuki Matsumoto
- 👤 Osamu Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; C; C23; C23C; C23C16/00; C23C16/04; C23C16/06; C23C16/18; C23C16/20; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
175 words
A method of forming a deposition film, comprising steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from less than a decomposition temperature of the alkylaluminum hydride to 450° C.; generating the plasma in said CVD apparatus while the gas of the alkylaluminum hydride is supplied, and forming said metal film consisting essentially of aluminum and a metal film containing aluminum as a major constituent on said non-electron donor surface, wherein the plasma having a plasma area having an electron density of the plasma falling within a range of 5×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
Claim 2
Independent Claim
175 words
A method of forming a deposition film, comprising steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from less than a decomposition temperature of the alkylaluminum hydride to 450° C.; generating the plasma in said CVD apparatus while the gas of the alkylaluminum hydride is supplied, and forming said metal film consisting essentially of aluminum and a metal film containing aluminum as a major constituent on said non-electron donor surface, wherein the plasma having a plasma area having an electron density of the plasma falling within a range of 5×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein the alkylaluminum hydride is dimethylaluminum hydride.
Claim 4
Dependent Claim
33 words
A method according to claim 1, wherein the electron density of the plasma falls within a range of 5×10 8 cm -3 to 2×10 9 cm -3 near said surface of said substrate.
Claim 5
Independent Claim
179 words
A method of forming a deposition film, comprising the steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space so that a partial pressure of the gas of alkylaluminum hydride falls within a range of 7×10 -3 to 9×10 -2 Torr; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from no less than a decomposition temperature of the alkylaluminum hydride to 450° C.; and generating the plasma in said CVD apparatus while the alkylaluminum hydride is supplied, and forming a metal film consisting essentially of aluminum on said non-electron donor surface, wherein the plasma having an electron density within a range of 1×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
Claim 6
Independent Claim
179 words
A method of forming a deposition film, comprising the steps of: locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface; supplying a gas of an alkylaluminum hydride to said deposition film formation space so that a partial pressure of the gas of alkylaluminum hydride falls within a range of 7×10 -3 to 9×10 -2 Torr; selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from no less than a decomposition temperature of the alkylaluminum hydride to 450° C.; and generating the plasma in said CVD apparatus while the alkylaluminum hydride is supplied, and forming a metal film consisting essentially of aluminum on said non-electron donor surface, wherein the plasma having an electron density within a range of 1×10 8 to 8×10 10 cm -3 near a surface of said substrate is generated to form said metal film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-02-19 | 1999-08-21 | 2000-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
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