US5364664A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for non-selectively forming deposition film on a non-electron-donative surface
Assignee: Canon Inc
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Filing: 1992-12-22
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Granted: 1994-11-15
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Expires: 2012-12-22
Abstract
Abstract A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450 DEG C.
Inventors
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:05
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/06; C23C16/18; C23C16/20; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
158 words
A process for forming a deposition film comprising aluminum, comprising the steps of: placing a substrate having an electron-donative surface and a non-electron-donative surface in a space for deposition film formation in a chemical vapor deposition apparatus capable of generating plasma: introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; forming a first film comprising aluminum selectively on the electron-donative surface by maintaining the electron-donative surface at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450° C.; modifying the non-electron-donative surface by generating plasma while the gas comprising alkylaluminum hydride and the hydrogen gas are introduced, wherein the electron density of the plasma is in the range of from 1×10 8 to 8×10 10 cm -3 in vicinity of the surface of the substrate; and forming a second film comprising aluminum on the first film and the non-electron-donative surface.
Claim 2
Dependent Claim
158 words
A process for forming a deposition film comprising aluminum, comprising the steps of: placing a substrate having an electron-donative surface and a non-electron-donative surface in a space for deposition film formation in a chemical vapor deposition apparatus capable of generating plasma: introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; forming a first film comprising aluminum selectively on the electron-donative surface by maintaining the electron-donative surface at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450° C.; modifying the non-electron-donative surface by generating plasma while the gas comprising alkylaluminum hydride and the hydrogen gas are introduced, wherein the electron density of the plasma is in the range of from 1×10 8 to 8×10 10 cm -3 in vicinity of the surface of the substrate; and forming a second film comprising aluminum on the first film and the non-electron-donative surface.
Claim 3
Dependent Claim
11 words
The process according to claim 1, wherein the substrate is silicon.
Claim 4
Dependent Claim
12 words
The process according to claim 1, wherein the substrate is monocrystalline silicon.
Claim 5
Dependent Claim
19 words
The process according to claim 1, wherein the electron-donative surface is silicon and the electron-non-donative surface is silicon oxide.
Claim 6
Dependent Claim
16 words
The process according to claim 1, wherein the electron-non-donative surface is patterned to define contract holes.
Claim 7
Dependent Claim
15 words
The process according to claim 1, wherein the substrate temperature is 270° to 350° C.
Claim 8
Dependent Claim
36 words
The process according to claim 1, wherein the surface modification is carried out at a pressure of 0.1 to 5 Torr and at an applied electric power of plasma of 0.04 to 0.4 W/cm 3 .
Claim 9
Dependent Claim
19 words
The process according to claim 1, wherein further film formation is carried out after plasma treatment has been discontinued.
Claim 10
Dependent Claim
18 words
The process according to claim 1, wherein further film formation is carried out without stopping the plasma generation.
Claim 11
Dependent Claim
15 words
The process according to claim 1, wherein the alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 12
Dependent Claim
15 words
The process according to claim 1, wherein the alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 13
Dependent Claim
29 words
The process according to claim 10, wherein there is also introduced into the film formation space a gas containing silicon so that aluminum-silicon film is deposited on the substrate.
Claim 14
Dependent Claim
29 words
The process according to claim 11, wherein there is also introduced into the film formation space a gas containing silicon so that aluminum-silicon film is deposited on the substrate.
Claim 15
Dependent Claim
16 words
The process according to claim 12, wherein the silicon-containing gas is Si 2 H 6 .
Claim 16
Dependent Claim
16 words
The process according to claim 13, wherein the silicon-containing gas is Si 2 H 6 .
Claim 17
Dependent Claim
30 words
The process according to claim 10, wherein the partial pressure of the dimethyl aluminum hydride during aluminum deposition is not more than 5×10 -3 of the partial pressure of hydrogen.
Claim 18
Dependent Claim
43 words
The process according to claim 10, wherein the internal pressure of the apparatus is 10 -3 to 760 Tort and the dimethyl aluminum hydride is present at a partial pressure 1.5×10 -5 to 1.3×10 -3 of the internal pressure of the reaction vessel.
Claim 19
Dependent Claim
33 words
The process according to claim 1, wherein the substrate is chemically treated so that the electron-donative surface becomes terminated with hydrogen atoms and is then introduced into the space for deposition film formation.
Claim 20
Dependent Claim
20 words
The process according to claim 18, wherein the chemical surface treatment comprises washing with ammonia solution and hydrogen peroxide solution.
Claim 21
Dependent Claim
21 words
The process according to claim 18, wherein the chemical surface treatment comprises washing with sulfuric acid solution and hydrogen peroxide solution.
Claim 22
Dependent Claim
16 words
The process according to claim 18, wherein the chemical surface treatment comprises washing with hydrofluoric acid.
Claim 23
Dependent Claim
16 words
The process according to claim 18, wherein the chemical surface treatment further comprises washing with water.
Claim 24
Dependent Claim
18 words
The process as in any one claims 4-22, wherein there is formed selectively deposited aluminum which is monocrystalline.
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