US6081023A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1999-04-09
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Granted: 2000-06-27
•
Expires: 2019-04-09
Abstract
Abstract As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
Inventors
- 👤 Gen Murakami
- 👤 Kunihiro Tsubosaki
- 👤 Masahiro Ichitani
- 👤 Kunihiko Nishi
- 👤 Ichiro Anjoh
- 👤 Asao Nishimura
- 👤 Makoto Kitano
- 👤 Akihiro Yaguchi
- 👤 Sueo Kawai
- 👤 Masatsugu Ogata
- 👤 Syuuji Eguchi
- 👤 Hiroyoshi Kokaku
- 👤 Masanori Segawa
- 👤 Hiroshi Hozoji
- 👤 Takashi Yokoyama
- 👤 Noriyuki Kinjo
- 👤 Aizo Kaneda
- 👤 Junichi Saeki
- 👤 Shozo Nakamura
- 👤 Akio Hasebe
- 👤 Hiroshi Kikuchi
- 👤 Isamu Yoshida
- 👤 Takashi Yamazaki
- 👤 Kazuyoshi Oshima
- 👤 Tetsurou Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:37
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10D; H10D62/00; H10D62/10; H10D62/117; H10W70/00; H10W70/40; H10W70/411; H10W70/415; H10W70/421; H10W70/424; H10W70/427; H10W70/429; H10W70/435; H10W70/456; H10W70/458; H10W70/461; H10W90/00; H05; H05K; H05K1/00; H05K1/02; H05K1/14; H05K1/144; H05K1/18; H05K1/181; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3421; H10W70/60; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/073; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/20; H10W72/29; H10W72/30; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/381; H10W72/50; H10W72/521; H10W72/522; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/553; H10W72/555; H10W72/59; H10W72/851; H10W72/853; H10W72/865; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W90/20; H10W90/291; H10W90/701; H10W90/721; H10W90/726; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
185 words
A semiconductor device comprising: a semiconductor chip having a main surface, an integrated circuit and external terminals on said main surface, and a polyimide film covering said main surface, said polyimide film having openings exposing said external terminals; an insulating layer formed on said polyimide film; a plurality of leads each having an inner lead and an outer lead which is continuous with said inner lead, a portion of said inner lead being disposed over said main surface; bonding wires electrically connecting said portions of said inner leads with corresponding external terminals respectively; and a resin member sealing said semiconductor chip, said inner leads, said insulating layer and said bonding wires, said outer leads protruding outwardly from said resin member, wherein an area occupied by said insulating layer is smaller than that of said polyimide film, wherein said portions of said inner leads are adhered to said semiconductor chip via said insulating layer, and wherein said insulating layer is provided between only a part of each of said portions of said inner leads and said polyimide film, in the extending direction of said inner leads.
Claim 2
Dependent Claim
185 words
A semiconductor device comprising: a semiconductor chip having a main surface, an integrated circuit and external terminals on said main surface, and a polyimide film covering said main surface, said polyimide film having openings exposing said external terminals; an insulating layer formed on said polyimide film; a plurality of leads each having an inner lead and an outer lead which is continuous with said inner lead, a portion of said inner lead being disposed over said main surface; bonding wires electrically connecting said portions of said inner leads with corresponding external terminals respectively; and a resin member sealing said semiconductor chip, said inner leads, said insulating layer and said bonding wires, said outer leads protruding outwardly from said resin member, wherein an area occupied by said insulating layer is smaller than that of said polyimide film, wherein said portions of said inner leads are adhered to said semiconductor chip via said insulating layer, and wherein said insulating layer is provided between only a part of each of said portions of said inner leads and said polyimide film, in the extending direction of said inner leads.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said polyimide film has a thickness of 2.0 to 10.0 microns.
Claim 4
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said polyimide film acts as a shield against alpha-rays.
Claim 5
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said integrated circuit of said semiconductor chip includes a memory circuit.
Claim 6
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein comprising another polyimide film, on a surface of said semiconductor chip opposed to said main surface.
Claim 7
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said insulating layer includes a thermosetting resin film.
Claim 8
Dependent Claim
77 words
A semiconductor device according to claim 1, wherein each of said portions of said inner leads has a first part, a second part and a stepped part between said first and second parts, wherein said second part is farther than said first part from said main surface in a thickness direction of said semiconductor chip, and is spaced from said polyimide film, and wherein said insulating layer is disposed between said polyimide film and said first part.
Claim 9
Dependent Claim
190 words
A semiconductor device comprising: a semiconductor chip having a main surface, an integrated circuit and external terminals formed on said main surface, and an alpha-ray shielding film covering said main surface, said alpha-ray shielding film having openings exposing said external terminals; an insulating layer on said alpha-ray shielding film; a plurality of leads each having an inner lead and an outer lead which is continuous with said inner lead, a portion of said inner lead being disposed over said main surface; bonding wires electrically connecting said portions of said inner leads with corresponding external terminals respectively; and a resin member sealing said semiconductor chip, said inner leads, said insulating layer and said bonding wires, said outer leads protruding outwardly from said resin member, wherein an area occupied by said insulating film is smaller than that of said alpha-ray shielding film, wherein said portions of said inner leads are adhered to said semiconductor chip via said insulating layer, and wherein said insulating layer is provided between only a part of each of said portions of said inner leads and said alpha-ray shielding film, in the extending direction of said inner leads.
Claim 10
Dependent Claim
190 words
A semiconductor device comprising: a semiconductor chip having a main surface, an integrated circuit and external terminals formed on said main surface, and an alpha-ray shielding film covering said main surface, said alpha-ray shielding film having openings exposing said external terminals; an insulating layer on said alpha-ray shielding film; a plurality of leads each having an inner lead and an outer lead which is continuous with said inner lead, a portion of said inner lead being disposed over said main surface; bonding wires electrically connecting said portions of said inner leads with corresponding external terminals respectively; and a resin member sealing said semiconductor chip, said inner leads, said insulating layer and said bonding wires, said outer leads protruding outwardly from said resin member, wherein an area occupied by said insulating film is smaller than that of said alpha-ray shielding film, wherein said portions of said inner leads are adhered to said semiconductor chip via said insulating layer, and wherein said insulating layer is provided between only a part of each of said portions of said inner leads and said alpha-ray shielding film, in the extending direction of said inner leads.
Claim 11
Dependent Claim
20 words
A semiconductor device according to claim 8, wherein said alpha-ray shielding film has a thickness of 2.0 to 10.0 microns.
Claim 12
Dependent Claim
19 words
A semiconductor device according to claim 8, wherein said integrated circuit of said semiconductor chip includes a memory circuit.
Claim 13
Dependent Claim
24 words
A semiconductor device according to claim 8, further comprising a polyimide film, on a surface of said semiconductor chip opposed to said main surface.
Claim 14
Dependent Claim
16 words
A semiconductor device according to claim 8, wherein said insulating layer includes a thermosetting resin film.
Claim 15
Dependent Claim
79 words
A semiconductor device according to claim 7, wherein each of said portions of said inner leads has a first part, a second part and a stepped part between said first and second parts, wherein said second part is farther than said first part from said main surface in a thickness direction of said semiconductor chip, and is spaced from said alpha-ray shielding film, and wherein said insulating layer is disposed between said alpha-ray shielding film and said first part.
References Cited (Backward Citations)
US3783348A
Cited
US4203792A
Cited
US4209355A
Cited
US4355463A
Cited
JPS5745961A
Cited
US4637130A
Cited
US4577214A
Cited
US4661837A
Cited
JPS5943534A
Cited
JPS5992556A
Cited
JPS60167454A
Cited
JPS60208847A
Cited
JPS61236130A
Cited
US4862245A
Cited
JPS61241959A
Cited
US4807018A
Cited
US4684975A
Cited
US4809053A
Cited
JPS6344749A
Cited
JPS63211744A
Cited
US4796078A
Cited
US5914530A
Cited
US4996587A
Cited
US5442233A
Cited
US5357139A
Cited
US5252854A
Cited
US5539250A
Cited
US5359224A
Cited
US5049981A
Cited
US5304842A
Cited
US5319241A
Cited
US5327009A
Cited
US5563443A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-27 | 2003-12-27 | 2004-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-27 | 2007-12-27 | 2008-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-27 | 2011-12-27 | 2012-06-27 | $7700.00 | Window Closed / Lapsed |