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Patent US6063639A successfully refreshed from Google Patents.
US6063639A
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Method for fabricating ferroelectric capacitor of nonvolatile semiconductor memory device using plasma
Assignee: SK Hynix Inc
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Filing: 1999-10-28
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Granted: 2000-05-16
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Expires: 2019-10-28
Abstract
Abstract A method for fabricating a ferroelectric capacitor of nonvolatile semiconductor memory device includes the steps of forming an amorphous layer on a resulting structure after performing a specific process, forming perovskite nuclei within the amorphous layer by an oxidation reaction in plasma atmosphere and performing a thermal process for growing the grains to form a ferroelectric thin film. The perovskite nuclei are formed at a low temperature, so that the ferroelectric capacitor has improved properties such as high density, high polarization and low leakage current.
Inventors
- 👤 Nam Kyeong Kim
- 👤 Seung Jin Yeom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/689; H10P14/6304; H10P14/6319; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P95/00; H10P95/90; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
56 words
A method for fabricating a ferroelectric capacitor, comprising the steps of: a) forming an amorphous layer on a resulting structure after performing a specific process; b) forming perovskite nuclei within the amorphous layer by an oxidation reaction in plasma atmosphere; and c) performing a thermal process for growing the grains to form a ferroelectric thin film.
Claim 2
Independent Claim
56 words
A method for fabricating a ferroelectric capacitor, comprising the steps of: a) forming an amorphous layer on a resulting structure after performing a specific process; b) forming perovskite nuclei within the amorphous layer by an oxidation reaction in plasma atmosphere; and c) performing a thermal process for growing the grains to form a ferroelectric thin film.
Claim 3
Dependent Claim
54 words
The method as recited in claim 1, wherein the step b) further includes the step of diffusing one or a combination selected from the groups consisting of N 2 O(gas), O 2 (gas), H 2 O(gas), N 2 O(gas)+H 2 O(liquid) and O 2 (gas)H 2 O(liquid) into a chamber which maintains plasma atmosphere.
Claim 4
Dependent Claim
38 words
The method as recited in claim 2, wherein the plasma atmosphere in the step b) is maintained at a plasma power of 80 W to 800 W using RF (radio frequency) method or ECR (electron cyclotron resonance) method.
Claim 5
Dependent Claim
22 words
The method as recited in claim 3, wherein the plasma atmosphere is maintained at a pressure of 0.5 Torr to 5 Torr.
Claim 6
Dependent Claim
22 words
The method as recited in claim 4, wherein the plasma atmosphere is maintained at a temperature of 350° C. to 550° C.
Claim 7
Dependent Claim
31 words
The method as recited in claim 2, wherein the amorphous layer includes one or a combination selected from the groups consisting of strontium (Sr), bismuth (Bi), tantalum (Ta) and niobium (Nb).
Claim 8
Dependent Claim
20 words
The method as recited in claim 6, wherein the step b) further includes the step of baking the amorphous layer.
Claim 9
Dependent Claim
31 words
The method as recited in claim 7, wherein the baking process includes a first process for volatilizing xylene and butyl acetate and a second process for volatilizing 2-ethylhexanoate and 2-ethylhexanoic acid.
Claim 10
Dependent Claim
22 words
The method as recited in claim 8, wherein the baking process is performed at a temperature of 150° C. to 300° C.
Claim 11
Dependent Claim
25 words
The method as recited in claim 9, wherein the amorphous layer in step a) is formed to a thickness of 800 Å to 3000 Å.
Claim 12
Dependent Claim
38 words
The method as recited in claim 10, wherein the plasma atmosphere in the step b) is maintained at a plasma power of 80 W to 200 W using RF (radio frequency) method or ECR (electron cyclotron resonance) method.
Claim 13
Dependent Claim
22 words
The method as recited in claim 11, wherein the plasma atmosphere is maintained at a pressure of 0.5 Torr to 5 Torr.
Claim 14
Dependent Claim
22 words
The method as recited in claim 12, wherein the plasma atmosphere is maintained at a temperature of 350° C. to 550° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-16 | 2003-11-15 | 2004-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-16 | 2007-11-15 | 2008-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-16 | 2011-11-15 | 2012-05-16 | $7700.00 | Window Closed / Lapsed |