Patent US6054340A successfully refreshed from Google Patents.
US6054340A
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Method for forming a cavity capable of accessing deep fuse structures and device containing the same
Assignee: NXP USA Inc
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Filing: 1997-06-06
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Granted: 2000-04-25
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Expires: 2017-06-06
Abstract
Abstract A method for forming a cavity (30) to a structure such as a poly fuse (114) with a deep etch process whereby a mask is formed over the structure a first dielectric layer (23) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer (34) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric (34) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity 30.
Inventors
- 👤 Joel Mitchell
- 👤 Fred Cumplan
- 👤 Gary Pfeffer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
141 words
A method for forming a cavity over a conductive element in an integrated circuit having a substrate, a first patterned conductive layer over the substrate including said conductive element and a second patterned conductive layer, and a first dielectric layer over the first patterned conductive layer, comprising the steps of: forming a first mask over the first dielectric layer with an opening disposed over the conductive element; etching partially through the first dielectric layer over the conductive element to leave a remaining portion of the first dielectric layer; after etching partially through the first dielectric layer, depositing a second dielectric layer over the second patterned conductive forming a second mask with a first opening disposed over the conductive element; and after forming the second mask, etching through the remaining portion of the first dielectric layer to the second patterned conductive layer.
Claim 2
Independent Claim
141 words
A method for forming a cavity over a conductive element in an integrated circuit having a substrate, a first patterned conductive layer over the substrate including said conductive element and a second patterned conductive layer, and a first dielectric layer over the first patterned conductive layer, comprising the steps of: forming a first mask over the first dielectric layer with an opening disposed over the conductive element; etching partially through the first dielectric layer over the conductive element to leave a remaining portion of the first dielectric layer; after etching partially through the first dielectric layer, depositing a second dielectric layer over the second patterned conductive forming a second mask with a first opening disposed over the conductive element; and after forming the second mask, etching through the remaining portion of the first dielectric layer to the second patterned conductive layer.
Claim 3
Independent Claim
168 words
A method for forming a cavity for accessing a fuse in an integrated circuit having a substrate, comprising the steps of: forming a first conductive layer with a fuse included therein over the substrate; forming a multi-layered dielectric over the first conductive layer; forming a patterned final metal layer on the multi-layered dielectric to have a bond pad, an interconnect, and an opening over the fuse; forming a first mask over the multi-layered dielectric with an opening disposed over the fuse; etching partially through the multi-layered dielectric over the fuse; after etching partially through the multi-layered dielectric to leave a remaining portion of the multi-layered dielectric, depositing a passivation layer over the bond pad, the interconnect, and over the remaining portion of the multi-layered dielectric; forming a second mask with openings disposed over the fuse and the bond pad but not over the interconnect; and etching through the passivation layer over the bond pad and over the remaining portion of the multi-layered dielectric but not over the interconnect.
Claim 4
Independent Claim
168 words
A method for forming a cavity for accessing a fuse in an integrated circuit having a substrate, comprising the steps of: forming a first conductive layer with a fuse included therein over the substrate; forming a multi-layered dielectric over the first conductive layer; forming a patterned final metal layer on the multi-layered dielectric to have a bond pad, an interconnect, and an opening over the fuse; forming a first mask over the multi-layered dielectric with an opening disposed over the fuse; etching partially through the multi-layered dielectric over the fuse; after etching partially through the multi-layered dielectric to leave a remaining portion of the multi-layered dielectric, depositing a passivation layer over the bond pad, the interconnect, and over the remaining portion of the multi-layered dielectric; forming a second mask with openings disposed over the fuse and the bond pad but not over the interconnect; and etching through the passivation layer over the bond pad and over the remaining portion of the multi-layered dielectric but not over the interconnect.
Claim 5
Dependent Claim
21 words
The method of claim 2, wherein the step of forming the first conductive layer includes the first conductive layer containing silicon.
Claim 6
Dependent Claim
22 words
The method of claim 2 further comprising: before forming the first mask, depositing a protective layer over the patterned final metal layer.
Claim 7
Dependent Claim
16 words
The method of claim 2 further comprising the step of blowing the fuse with a laser.
Claim 8
Dependent Claim
27 words
The method of claim 2 wherein the step of etching partially through the multi-layered dielectric over the fuse etches at least through 70% of the multi-layered dielectric.
Claim 9
Dependent Claim
35 words
The method of claim 2 further comprising the step of: after the first conductive layer is formed, forming an interpoly dielectric and a second patterned conductive layer with an etch stop portion over the fuse.
Claim 10
Dependent Claim
29 words
The method of claim 7 further comprising the steps of: after etching the passivation layer, etching through to the etch stop portion; and etching through the etch stop portion.
Claim 11
Dependent Claim
37 words
The method of claim 8 further comprising the steps of: forming a first patterned metal layer after forming the second patterned conductive layer; and forming a second patterned metal layer after forming the first patterned metal layer.
Claim 12
Dependent Claim
36 words
The method of claim 2 further comprising the steps of: forming a first patterned metal layer after forming the first conductive layer; and forming a second patterned metal layer after forming the first patterned metal layer.
Claim 13
Independent Claim
170 words
A method for forming a cavity for blowing a fuse in an integrated circuit having a substrate, comprising the steps of: forming a first conductive layer containing silicon with a fuse included therein over the substrate; forming a first dielectric layer over the first conductive layer; forming second conductive layer containing silicon with an etch stop portion over the fuse; forming a multi-layered dielectric over the second conductive layer; forming a patterned final metal layer over the multi-layered dielectric with an opening over the fuse; forming a first mask over the multi-layered dielectric with an opening disposed over the etch stop portion; etching partially through the multi-layered dielectric over the fuse; after etching partially through the multi-layered dielectric to leave a remaining portion of the multi-layered dielectric, depositing a second dielectric layer over the patterned final metal layer; forming a second mask with an opening disposed over the fuse; etching through the remaining portion of the multi-layered dielectric to the etch stop portion; and etching through the etch stop portion.
Claim 14
Independent Claim
170 words
A method for forming a cavity for blowing a fuse in an integrated circuit having a substrate, comprising the steps of: forming a first conductive layer containing silicon with a fuse included therein over the substrate; forming a first dielectric layer over the first conductive layer; forming second conductive layer containing silicon with an etch stop portion over the fuse; forming a multi-layered dielectric over the second conductive layer; forming a patterned final metal layer over the multi-layered dielectric with an opening over the fuse; forming a first mask over the multi-layered dielectric with an opening disposed over the etch stop portion; etching partially through the multi-layered dielectric over the fuse; after etching partially through the multi-layered dielectric to leave a remaining portion of the multi-layered dielectric, depositing a second dielectric layer over the patterned final metal layer; forming a second mask with an opening disposed over the fuse; etching through the remaining portion of the multi-layered dielectric to the etch stop portion; and etching through the etch stop portion.
Claim 15
Dependent Claim
28 words
The method of claim 11 further comprising: before forming the second mask and after forming the first mask, depositing a protective layer over the patterned final metal layer.
Claim 16
Dependent Claim
41 words
The method of claim 12 further comprising: forming a bond pad during the forming of the patterned final metal layer; and removing the protective layer from over the bond pad during the etching through the remaining portion of the multi-layered dielectric.
Claim 17
Dependent Claim
65 words
The method of claim 13 wherein the etching through the remaining portion of the multi-layered dielectric comprises: removing the protective layer over the bond pad and a portion of the remaining portion of the multi-layered dielectric with a first etch chemistry; and then etching with a second etch chemistry to achieve etching through the remaining portion of the multi-layered dielectric to the etch stop portion.
Claim 18
Dependent Claim
36 words
The method of claim 11 further comprising the steps of: forming a first patterned metal layer after forming the second conductive layer; and forming a second patterned metal layer after forming the first patterned metal layer.
Claim 19
Independent Claim
143 words
A method for forming a cavity for blowing a fuse in an integrated circuit having a substrate, comprising the steps of: forming a silicon containing layer with a fuse included therein over the substrate; forming a multi-layered dielectric over the silicon containing layer; forming a patterned final metal layer over the multi-layered dielectric with an opening over the fuse; forming a first mask over the multi-layered dielectric with an opening disposed over the fuse; etching partially through the multi-layered dielectric over the fuse; after etching partially through the multi-layered dielectric to leave a remaining portion of the multi-layered dielectric, depositing a passivation layer over the patterned final metal layer and over the remaining portion of the multi-layered dielectric; forming a second mask with an opening disposed over the fuse; and etching through the passivation layer over the remaining portion of the multi-layered dielectric.
Claim 20
Independent Claim
143 words
A method for forming a cavity for blowing a fuse in an integrated circuit having a substrate, comprising the steps of: forming a silicon containing layer with a fuse included therein over the substrate; forming a multi-layered dielectric over the silicon containing layer; forming a patterned final metal layer over the multi-layered dielectric with an opening over the fuse; forming a first mask over the multi-layered dielectric with an opening disposed over the fuse; etching partially through the multi-layered dielectric over the fuse; after etching partially through the multi-layered dielectric to leave a remaining portion of the multi-layered dielectric, depositing a passivation layer over the patterned final metal layer and over the remaining portion of the multi-layered dielectric; forming a second mask with an opening disposed over the fuse; and etching through the passivation layer over the remaining portion of the multi-layered dielectric.
Claim 21
Dependent Claim
22 words
The method of claim 16 further comprising: before forming the first mask, depositing a protective layer over the patterned final metal layer.
Claim 22
Dependent Claim
45 words
The method of claim 16 further comprising: forming a bond pad during the forming of the patterned final metal layer; and removing the passivation layer from over the bond pad during the etching through the passivation layer over the remaining portion of the multi-layered dielectric.
Claim 23
Dependent Claim
16 words
The method of claim 16 further comprising the step of blowing the fuse with a laser.
Claim 24
Dependent Claim
27 words
The method of claim 16 wherein the step of etching partially through the multi-layered dielectric over the fuse etches at least through 70% of the multi-layered dielectric.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |