Method of fabricating capacitor

Claim 1

A method of fabricating a capacitor, wherein a semiconductor substrate having a metal-oxide-semiconductor is provided, comprising: forming a first oxide layer, a silicon nitride layer, a second oxide layer, and a first poly-silicon layer on the substrate in sequence; patterning the first poly-silicon layer and the second oxide layer to form a first opening, so that the silicon nitride layer within the first opening is exposed; forming a third oxide layer over the substrate; etching the third oxide layer with the silicon nitride layer as an etch stop; etching the silicon nitride layer to form a second opening the first oxide layer is exposed, using the remaining third oxide layer and the first poly-silicon layer as masks; deepening the second opening by etching the first oxide layer until the substrate is exposed; forming a second poly-silicon layer to cover the first poly-silicon layer and the first opening, and to fill the second opening; forming a fourth oxide layer on the second poly-silicon layer; removing the fourth oxide layer, the second poly-silicon layer, and the first poly-silicon layer until the second oxide layer is exposed; wet etching the remaining fourth oxide layer and the second oxide layer with the silicon nitride layer as an etch stop; forming an insulation layer over the silicon substrate; and forming a third poly-silicon layer on the insulation layer.

Claim 2

A method of fabricating a capacitor, wherein a semiconductor substrate having a metal-oxide-semiconductor is provided, comprising: forming a first oxide layer, a silicon nitride layer, a second oxide layer, and a first poly-silicon layer on the substrate in sequence; patterning the first poly-silicon layer and the second oxide layer to form a first opening, so that the silicon nitride layer within the first opening is exposed; forming a third oxide layer over the substrate; etching the third oxide layer with the silicon nitride layer as an etch stop; etching the silicon nitride layer to form a second opening the first oxide layer is exposed, using the remaining third oxide layer and the first poly-silicon layer as masks; deepening the second opening by etching the first oxide layer until the substrate is exposed; forming a second poly-silicon layer to cover the first poly-silicon layer and the first opening, and to fill the second opening; forming a fourth oxide layer on the second poly-silicon layer; removing the fourth oxide layer, the second poly-silicon layer, and the first poly-silicon layer until the second oxide layer is exposed; wet etching the remaining fourth oxide layer and the second oxide layer with the silicon nitride layer as an etch stop; forming an insulation layer over the silicon substrate; and forming a third poly-silicon layer on the insulation layer.

Claim 6

A method of fabricating a capacitor, wherein a semiconductor substrate having a metal-oxide-semiconductor is provided, comprising: forming a first oxide layer, a silicon nitride layer, a second oxide layer, and a first poly-silicon layer on the substrate in sequence; patterning the first poly-silicon layer, the second oxide layer, and the silicon nitride layer to form a first opening, so that the first oxide layer within the first opening is exposed; forming a third oxide layer over the substrate; etching the third oxide layer and the first oxide layer to form a second opening to expose the substrate; forming a second poly-silicon layer over the substrate; forming a fourth oxide layer on the second poly-silicon layer; removing the fourth oxide layer, the second poly-silicon layer, and the first poly-silicon layer until the second oxide layer is exposed; wet etching the remaining fourth oxide layer and the second oxide layer with the silicon nitride layer as an etch stop; forming an insulation layer over the silicon substrate; and forming a third poly-silicon layer on the insulation layer.

Claim 7

A method of fabricating a capacitor, wherein a semiconductor substrate having a metal-oxide-semiconductor is provided, comprising: forming a first oxide layer, a silicon nitride layer, a second oxide layer, and a first poly-silicon layer on the substrate in sequence; patterning the first poly-silicon layer, the second oxide layer, and the silicon nitride layer to form a first opening, so that the first oxide layer within the first opening is exposed; forming a third oxide layer over the substrate; etching the third oxide layer and the first oxide layer to form a second opening to expose the substrate; forming a second poly-silicon layer over the substrate; forming a fourth oxide layer on the second poly-silicon layer; removing the fourth oxide layer, the second poly-silicon layer, and the first poly-silicon layer until the second oxide layer is exposed; wet etching the remaining fourth oxide layer and the second oxide layer with the silicon nitride layer as an etch stop; forming an insulation layer over the silicon substrate; and forming a third poly-silicon layer on the insulation layer.