Patent US6037018A successfully refreshed from Google Patents.
US6037018A
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US
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Shallow trench isolation filled by high density plasma chemical vapor deposition
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1998-07-01
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Granted: 2000-03-14
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Expires: 2018-07-01
Abstract
Abstract A method for filling shallow trenches 28 with a HDPCVD oxide 50. The invention has two liners: (a) a thermal oxide liner 36 and (b) an overlying conformal O3-TEOS protective liner 40. The O3-TEOS protective liner 40 prevents the HDPCVD oxide 50 from sputter damaging the trench sidewalls and the masking layer 24. The O3-TEOS layer has novel process temperature (400 to 560 DEG C.) and low pressure (40 to 80 torr) that allows the O3-TEOS layer to deposit uniformly over thermal oxide liner 36. The method begins by forming pad oxide layer 20 and a barrier layer 24 over a substrate. A trench 28 is formed in the substrate 10 through the pad oxide layer 20 and the barrier layer 24. A thermal oxide liner 36 and a protective O3-TEOS liner layer 40 are formed over the walls of the trench 28 and over the barrier layer 24. Lastly, a high density plasma chemical vapor deposition (HDPCVD) oxide layer 50 is formed over the protective liner layer 40 filling the trench 28.
Inventors
- 👤 Syun-Ming Jang
- 👤 Chu-Yun Fu
- 👤 Chen-Hua Douglas Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:45
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
131 words
A method of fabricating a HDPCVD oxide filled shallow trench isolation comprising the steps of: a) forming a pad oxide layer over a semiconductor substrate; b) forming a barrier layer over said pad oxide layer; c) forming a trench in said semiconductor substrate through said pad oxide layer and said barrier layer; said trench having sidewalls and a bottom; d) forming a thermal oxide layer over said sidewalls and said bottom of said trench; e) forming a protective liner layer on said thermal oxide layer and over said barrier layer; said protective liner layer being composed of silicon oxide formed by an O 3 -TEOS process at a temperature between 400 and 560° C.; f) forming an oxide layer using a HDPCVD process over said protective liner layer filling said trench.
Claim 2
Independent Claim
131 words
A method of fabricating a HDPCVD oxide filled shallow trench isolation comprising the steps of: a) forming a pad oxide layer over a semiconductor substrate; b) forming a barrier layer over said pad oxide layer; c) forming a trench in said semiconductor substrate through said pad oxide layer and said barrier layer; said trench having sidewalls and a bottom; d) forming a thermal oxide layer over said sidewalls and said bottom of said trench; e) forming a protective liner layer on said thermal oxide layer and over said barrier layer; said protective liner layer being composed of silicon oxide formed by an O 3 -TEOS process at a temperature between 400 and 560° C.; f) forming an oxide layer using a HDPCVD process over said protective liner layer filling said trench.
Claim 3
Dependent Claim
45 words
The method of claim 1 wherein said pad oxide layer has a thickness in a range of between about 100 and 150 Å; said barrier layer is composed of silicon nitride and having a thickness in a range of between about 1000 and 2000 Å.
Claim 4
Dependent Claim
35 words
The method of claim 1 wherein said trench having a depth in a range of between about 3000 and 5000 Å and a width in a range of between about 0.2 μm and 1.2 μm.
Claim 5
Dependent Claim
57 words
The method of claim 1 wherein said thermal oxide layer is formed with a thermal oxidation process at a temperature between about 850 and about 1000 degrees centigrade for a time period from about 20 to about 40 minutes and said thermal oxide layer having a thickness in a range of between about 150 and 400 Å.
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein said protective liner layer having a thickness in a range of between about 300 and 1000 Å.
Claim 7
Dependent Claim
55 words
The method of claim 1 wherein said protective liner layer is formed using a LPCVD process having a O 3 flow rate between about 4000 and 6000 sccm, a TEOS flow rate between 380 and 570 mgm in a He flow rate between 3200 and 4800 sccm, and a pressure between 48 and 72 torr.
Claim 8
Dependent Claim
81 words
The method of claim 1 wherein said protective liner layer formed using LPCVD process having a O 3 flow rate between about 4000 and 6000 sccm, a TEOS flow rate between 380 and 570 mgm in a He flow rate between 3200 and 4800 sccm; a pressure between 48 and 72 torr; then densifying said protective liner layer at a temperature between 900 and 1100° C. for a time between about 1.6 and 2.4 hours; and in a N 2 environment.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein said oxide layer having a thickness in a range of between about 4800 and 7200 Å.
Claim 10
Dependent Claim
78 words
The method of claim 1 wherein said oxide layer is formed using a HDPCVD process comprising: a HDPCVD-sputter rate between about 1100 and 1650 Å/min; deposit to sputter ratio between 5.5 and 6.5; an O 2 flow between 215 and 320 sccm; a SiH 4 gas flow between 105 and 158 sccm; an Ar flow rate between 100 and 150 sccm; at a pressure between 9 and 13 torr and at a temperature between 450 and 600° C.
Claim 11
Independent Claim
168 words
A method of fabricating a HDPCVD oxide filled shallow trench isolation comprising the steps of: a) forming pad oxide layer over a semiconductor substrate; b) forming a barrier layer over said pad oxide layer; c) forming a trench in said semiconductor substrate through said pad oxide layer and said barrier layer; said trench having sidewalls and a bottom; d) forming a thermal oxide layer over said sidewalls and said bottom of said trench; e) forming a protective liner layer on said thermal oxide layer and over said barrier layer; said protective liner layer is composed of silicon oxide formed by a O 3 -TEOS process; (e1) said protective liner layer is formed using a LPCVD process at a pressure between 48 and 72 torr; a temperature between 400 and 560° C.; f) forming an oxide layer using a HDPCVD process over said protective liner layer filling said trench; (f1) said oxide layer is formed using a HDPCVD process comprising: a deposition to sputter ratio between 5.0 and 7.0.
Claim 12
Independent Claim
168 words
A method of fabricating a HDPCVD oxide filled shallow trench isolation comprising the steps of: a) forming pad oxide layer over a semiconductor substrate; b) forming a barrier layer over said pad oxide layer; c) forming a trench in said semiconductor substrate through said pad oxide layer and said barrier layer; said trench having sidewalls and a bottom; d) forming a thermal oxide layer over said sidewalls and said bottom of said trench; e) forming a protective liner layer on said thermal oxide layer and over said barrier layer; said protective liner layer is composed of silicon oxide formed by a O 3 -TEOS process; (e1) said protective liner layer is formed using a LPCVD process at a pressure between 48 and 72 torr; a temperature between 400 and 560° C.; f) forming an oxide layer using a HDPCVD process over said protective liner layer filling said trench; (f1) said oxide layer is formed using a HDPCVD process comprising: a deposition to sputter ratio between 5.0 and 7.0.
Claim 13
Dependent Claim
46 words
The method of claim 10 wherein said pad oxide layer having a thickness in a range of between about 100 and 150 Å; and said barrier layer is composed of silicon nitride and having a thickness in a range of between about 1000 and 2000 Å.
Claim 14
Dependent Claim
35 words
The method of claim 10 wherein said trench having a depth in a range of between about 3000 and 5000 Å and a width in a range of between about 0.2 μm and 1.2 μm.
Claim 15
Dependent Claim
55 words
The method of claim 10 wherein said thermal oxide layer is formed with a thermal oxidation process a temperature between about 850 and about 1000 degrees centigrade for a time period from about 20 to about 40 minutes; said thermal oxide layer having a thickness in a range of between about 150 and 400 Å.
Claim 16
Dependent Claim
23 words
The method of claim 10 wherein said protective liner layer having a thickness in a range of between about 300 and 1000 Å.
Claim 17
Dependent Claim
40 words
The method of claim 10 wherein after said protective liner layer is formed, densifying said protective liner at a temperature between 900 and 1100° C. for a time between about 1.6 and 2.4 hours; and in a N 2 environment.
Claim 18
Dependent Claim
94 words
The method of claim 10 wherein said oxide layer having a thickness in a range of between about 4800 and 7200 Å; said oxide layer is formed using a HDPCVD process comprising a HDPCVD-sputter rate between about 1100 and 1650 Å/min; deposit to sputter ratio between 5.5 and 6.5; an O 2 flow between 215 and 320 sccm; a SiH 4 gas flow between 105 and 158 sccm; an Ar flow rate between 100 and 150 sccm; at a pressure between 9 and 13 torr and at a temperature between 450 and 600° C.
Claim 19
Independent Claim
320 words
A method of fabricating a HDPCVD oxide filled shallow trench isolation comprising the steps of: a) forming pad oxide layer over a semiconductor substrate; b) forming a barrier layer over said pad oxide layer; c) forming a trench in said semiconductor substrate through said pad oxide layer and said barrier layer; said trench having sidewalls and a bottom; d) forming a thermal oxide layer over said sidewalls and said bottom of said trench; e) forming a protective liner layer on said thermal oxide layer and over said barrier layer; said protective liner layer is composed of silicon oxide formed by a O 3 -TEOS process; (e1) said protective liner layer having a thickness in a range of between about 300 and 1000 Å; said protective liner layer is formed using a LPCVD process having a O 3 flow rate between about 4000 and 6000 sccm, a TEOS flow rate between 380 and 570 mgm in a He flow rate between 3200 and 4800 sccm, a pressure between 48 and 72 torr; a temperature between 400 and 560° C.; (e2) after said protective liner layer is formed, densifying said protective liner at a temperature between 900 and 1100° C. for a time between about 1.6 and 2.4 hours; and in a N 2 environment; f) forming an oxide layer using a HDPCVD process over said protective liner layer filling said trench 28; (f1) said oxide layer having a thickness in a range of between about 4800 and 7200 Å; said oxide layer is formed using a HDPCVD process comprising: a HDPCVD-sputter rate between about 1100 and 1650 Å/min; deposit to sputter ratio between 5.5 and 6.5; an O 2 flow between 215 and 320 sccm; a SiH 4 gas flow between 105 and 158 sccm; an Ar flow rate between 100 and 150 sccm; at a pressure between 9 and 13 torr and at a temperature between 450 and 600° C.
Claim 20
Independent Claim
320 words
A method of fabricating a HDPCVD oxide filled shallow trench isolation comprising the steps of: a) forming pad oxide layer over a semiconductor substrate; b) forming a barrier layer over said pad oxide layer; c) forming a trench in said semiconductor substrate through said pad oxide layer and said barrier layer; said trench having sidewalls and a bottom; d) forming a thermal oxide layer over said sidewalls and said bottom of said trench; e) forming a protective liner layer on said thermal oxide layer and over said barrier layer; said protective liner layer is composed of silicon oxide formed by a O 3 -TEOS process; (e1) said protective liner layer having a thickness in a range of between about 300 and 1000 Å; said protective liner layer is formed using a LPCVD process having a O 3 flow rate between about 4000 and 6000 sccm, a TEOS flow rate between 380 and 570 mgm in a He flow rate between 3200 and 4800 sccm, a pressure between 48 and 72 torr; a temperature between 400 and 560° C.; (e2) after said protective liner layer is formed, densifying said protective liner at a temperature between 900 and 1100° C. for a time between about 1.6 and 2.4 hours; and in a N 2 environment; f) forming an oxide layer using a HDPCVD process over said protective liner layer filling said trench 28; (f1) said oxide layer having a thickness in a range of between about 4800 and 7200 Å; said oxide layer is formed using a HDPCVD process comprising: a HDPCVD-sputter rate between about 1100 and 1650 Å/min; deposit to sputter ratio between 5.5 and 6.5; an O 2 flow between 215 and 320 sccm; a SiH 4 gas flow between 105 and 158 sccm; an Ar flow rate between 100 and 150 sccm; at a pressure between 9 and 13 torr and at a temperature between 450 and 600° C.
Claim 21
Dependent Claim
56 words
The method of claim 17 wherein said thermal oxide layer is formed with a thermal oxidation process at a temperature between about 850 and about 1000 degrees centigrade for a time period from about 20 to about 40 minutes; said thermal oxide layer having a thickness in a range of between about 150 and 400 Å.
References Cited (Backward Citations)
US5116779A
Cited
US5614055A
Cited
US5621241A
Cited
US5677231A
Cited
US5817567A
Cited
US5786262A
Cited
US5726090A
Cited
US5731241A
Cited
US5837612A
Cited
US5895254A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |