US5677231A
Expired / Lapsed
US
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Method for providing trench isolation
Assignee: Motorola Solutions Inc
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Filing: 1996-06-03
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Granted: 1997-10-14
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Expires: 2016-06-03
Abstract
Abstract A trench isolation region (32) is fabricated to include a trench liner (28) comprised of aluminum nitride. The aluminum nitride trench liner is useful in borderless contact applications wherein a contact opening (56) is etched in an interlayer dielectric (54) and overlies both an active region. (e.g. doped region 52) and the trench isolation region. During formation of opening using etch chemistry which is selective to aluminum nitride, the trench liner protects a P-N junction at a corner region (58) of the trench to prevent exposing the junction. By protecting the junction, subsequent formation of a conductive plug (60) will not electrically short circuit the junction, and will keep diode leakage to within acceptable levels.
Inventors
- 👤 Papu D. Maniar
- 👤 Robert W. Fiordalice
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D64/00; H10D64/01; H10D64/011; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/071; H10W20/081; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
201 words
A method for providing trench isolation in a semiconductor device comprising the steps of: providing a semiconductor substrate having a top surface; forming a stopping layer comprised of silicon nitride overlying the semiconductor substrate, forming a trench in the semiconductor substrate by etching through a portion of the stopping layer and a portion of the top surface of the semiconductor substrate, the trench having a bottom and having a sidewall which intersects the top surface of the semiconductor substrate at a corner region; depositing a layer of aluminum nitride over the semiconductor substrate to form a liner along the sidewall and the bottom of the trench; depositing an oxide over the semiconductor substrate and filling remaining portions of the trench; planarizing the oxide back to achieve a trench isolation region which is substantially planar with any layers surrounding the trench; depositing an interlayer dielectric over the semiconductor substrate, including over the trench and over the corner region of the trench; and etching an opening in the interlayer dielectric, wherein the opening is partially positioned over the trench and wherein etching is performed selective to the layer of aluminum nitride such that the liner remains intact near the corner region during etching.
Claim 2
Independent Claim
201 words
A method for providing trench isolation in a semiconductor device comprising the steps of: providing a semiconductor substrate having a top surface; forming a stopping layer comprised of silicon nitride overlying the semiconductor substrate, forming a trench in the semiconductor substrate by etching through a portion of the stopping layer and a portion of the top surface of the semiconductor substrate, the trench having a bottom and having a sidewall which intersects the top surface of the semiconductor substrate at a corner region; depositing a layer of aluminum nitride over the semiconductor substrate to form a liner along the sidewall and the bottom of the trench; depositing an oxide over the semiconductor substrate and filling remaining portions of the trench; planarizing the oxide back to achieve a trench isolation region which is substantially planar with any layers surrounding the trench; depositing an interlayer dielectric over the semiconductor substrate, including over the trench and over the corner region of the trench; and etching an opening in the interlayer dielectric, wherein the opening is partially positioned over the trench and wherein etching is performed selective to the layer of aluminum nitride such that the liner remains intact near the corner region during etching.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the step of planarizing comprises polishing, and wherein the stopping layer serves as a polish stopping layer.
Claim 4
Dependent Claim
61 words
The method of claim 1 further comprising the step of forming a P-N junction in the semiconductor substrate immediately adjacent the sidewall of the trench, and wherein the step of depositing a layer of aluminum nitride comprises protecting the P-N junction with the liner, and wherein the step of etching an opening comprises etching an opening without exposing the P-N junction.
Claim 5
Dependent Claim
23 words
The method of claim 3 further comprising the step of forming a conductive contact in the opening without electrically short-circuiting the P-N junction.
Claim 6
Dependent Claim
53 words
The method of claim 1 further comprising the step of growing a thermal oxide on the bottom and the sidewall of the trench to a thickness of 5 to 10 nanometers, and wherein the step of depositing a layer of aluminum nitride comprises depositing a layer of aluminum nitride on the thermal oxide.
Claim 7
Independent Claim
102 words
A method for providing trench isolation in a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a trench in the semiconductor substrate; lining the trench with a layer of aluminum nitride; filling the trench with an isolation dielectric material to form an isolation region; depositing an interlayer dielectric over the semiconductor substrate, including over the trench; and etching an opening in the interlayer dielectric, wherein the opening overlies both a portion of the trench and a portion of the semiconductor substrate beyond the trench, and wherein etching is performed selectively to the layer of aluminum nitride lining the trench.
Claim 8
Independent Claim
102 words
A method for providing trench isolation in a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a trench in the semiconductor substrate; lining the trench with a layer of aluminum nitride; filling the trench with an isolation dielectric material to form an isolation region; depositing an interlayer dielectric over the semiconductor substrate, including over the trench; and etching an opening in the interlayer dielectric, wherein the opening overlies both a portion of the trench and a portion of the semiconductor substrate beyond the trench, and wherein etching is performed selectively to the layer of aluminum nitride lining the trench.
Claim 9
Dependent Claim
17 words
The method of claim 6 wherein the step of etching comprises dry etching using a fluorine-based chemistry.
Claim 10
Dependent Claim
115 words
The method of claim 6 wherein the step of forming a trench comprises forming a trench having a boundary defined at least in part by a substrate region of first conductivity immediately adjacent to a substrate region of second conductivity which together form a junction, and the method further comprising the steps of: depositing an interlayer dielectric over the semiconductor substrate, including over the trench; etching an opening in the interlayer dielectric, wherein the opening overlies at least a portion of both the trench, and an area of the semiconductor substrate beyond the trench, and overlies the junction; and forming a conductive contact to the substrate region of first conductivity without electrically short-circuiting the junction.
Claim 11
Dependent Claim
31 words
The method of claim 6 wherein the step of lining the trench comprises lining the trench such that the layer of aluminum nitride is directly against a sidewall of the trench.
Claim 12
Dependent Claim
52 words
The method of claim 6 further comprising the step of growing a thermal oxide along a sidewalls of the trench, and wherein the step of lining the trench comprises lining the trench such that the layer of aluminum nitride is deposited over to the thermal oxide along the sidewall of the trench.
Claim 13
Dependent Claim
48 words
The method of claim 1 further comprising the step of growing a thermal oxide to line the trench prior to depositing the layer of aluminum nitride, and wherein the step of depositing a layer of aluminum nitride comprises depositing the layer of aluminum nitride on the thermal oxide.
Claim 14
Dependent Claim
41 words
The method of claim 1 further comprising the step of forming a pad oxide layer between the semiconductor substrate and the stopping layer, and wherein the step of forming a trench comprises etching through a portion of the pad oxide layer.
Claim 15
Dependent Claim
33 words
The method of claim 1 wherein the step of depositing a layer of aluminum nitride comprises depositing the layer of aluminum nitride directly against the sidewall of the trench in the semiconductor substrate.
Claim 16
Dependent Claim
29 words
The method of claim 1 wherein the step of planarizing comprises polishing, and wherein portions of the layer of aluminum nitride existing beyond the trench are removed during polishing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |