Patent US4525586A successfully refreshed from Google Patents.
Patent US6031288A successfully refreshed from Google Patents.
US6031288A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
Assignee: Adeia Semiconductor Advanced Technologies Inc
•
Filing: 1996-11-12
•
Granted: 2000-02-29
•
Expires: 2016-11-12
Abstract
Abstract A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.
Inventors
- 👤 Hiromi Todorobaru
- 👤 Hideo Miura
- 👤 Masayuki Suzuki
- 👤 Shinji Nishihara
- 👤 Shuji Ikeda
- 👤 Masashi Sahara
- 👤 Shinichi Ishida
- 👤 Hiromi Abe
- 👤 Atushi Ogishima
- 👤 Hiroyuki Uchiyama
- 👤 Sonoko Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/791; H10D30/794; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/047
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
93 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said silicon substrate in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said silicon substrate and said wiring metal in said contact hole, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 2
Dependent Claim
93 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said silicon substrate in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said silicon substrate and said wiring metal in said contact hole, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein said titanium silicide film has a thickness of 20 nm to 84 nm.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 5
Dependent Claim
113 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said silicon substrate in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said silicon substrate and said wiring metal in said contact hole, wherein a distance between a first interface between said silicon substrate and said insulating film and a second interface between said silicon substrate and said titanium silicide film is 18 nm to 78 nm.
Claim 6
Dependent Claim
113 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said silicon substrate in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said silicon substrate and said wiring metal in said contact hole, wherein a distance between a first interface between said silicon substrate and said insulating film and a second interface between said silicon substrate and said titanium silicide film is 18 nm to 78 nm.
Claim 7
Dependent Claim
21 words
A semiconductor device according to claim 4, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 8
Dependent Claim
113 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said silicon substrate in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said silicon substrate and said wiring metal in said contact hole, wherein a distance between a first interface between said silicon substrate and said insulating film and a second interface between said silicon substrate and said titanium silicide film is 9 nm to 110 nm.
Claim 9
Dependent Claim
113 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said silicon substrate in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said silicon substrate and said wiring metal in said contact hole, wherein a distance between a first interface between said silicon substrate and said insulating film and a second interface between said silicon substrate and said titanium silicide film is 9 nm to 110 nm.
Claim 10
Dependent Claim
21 words
A semiconductor device according to claim 6, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 11
Dependent Claim
104 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a polycrystalline silicon film provided in said contact hole; a wiring metal provided on said insulating film and electrically connected with said polycrystalline silicon film in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said polycrystalline silicon film and said wiring metal in said contact hole, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 12
Dependent Claim
104 words
A semiconductor device comprising: a silicon substrate; an insulating film provided on said silicon substrate and having a contact hole formed in said insulating film; a polycrystalline silicon film provided in said contact hole; a wiring metal provided on said insulating film and electrically connected with said polycrystalline silicon film in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said polycrystalline silicon film and said wiring metal in said contact hole, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 13
Dependent Claim
21 words
A semiconductor device according to claim 8, wherein said titanium silicide film has a thickness of 20 nm to 84 nm.
Claim 14
Dependent Claim
21 words
A semiconductor device according to claim 8, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 15
Dependent Claim
115 words
A semiconductor device comprising: a single crystal silicon substrate; a gate electrode of MOS structure formed on said single crystal silicon substrate; an insulating film provided on said single crystal silicon substrate and on said gate electrode and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said gate electrode in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said gate electrode and said wiring metal in said contact hole, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 16
Dependent Claim
115 words
A semiconductor device comprising: a single crystal silicon substrate; a gate electrode of MOS structure formed on said single crystal silicon substrate; an insulating film provided on said single crystal silicon substrate and on said gate electrode and having a contact hole formed in said insulating film; a wiring metal provided on said insulating film and electrically connected with said gate electrode in said contact hole; and a titanium silicide film, at least a part of which is formed in said contact hole and is provided at an interface between said gate electrode and said wiring metal in said contact hole, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 17
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein said titanium silicide film has a thickness of 20 nm to 84 nm.
Claim 18
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 19
Dependent Claim
21 words
A semiconductor device according to claim 2, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 20
Dependent Claim
53 words
A semiconductor device according to claim 1, wherein said wiring metal is a composite metal layer including a film layer of titanium which contacts said titanium silicide film in said contact hole, a metal nitride film thereon and a relatively thick film of a different metal material therefrom on said metal nitride film.
Claim 21
Dependent Claim
21 words
A semiconductor device according to claim 4, wherein said titanium silicide film has a thickness of 20 nm to 84 nm.
Claim 22
Dependent Claim
53 words
A semiconductor device according to claim 4, wherein said wiring metal is a composite metal layer including a film layer of titanium which contacts said titanium silicide film in said contact hole, a metal nitride film thereon and a relatively thick film of a different metal material therefrom on said metal nitride film.
Claim 23
Dependent Claim
21 words
A semiconductor device according to claim 6, wherein said titanium silicide film has a thickness of 10 nm to 120 nm.
Claim 24
Dependent Claim
53 words
A semiconductor device according to claim 6, wherein said wiring metal is a composite metal layer including a film layer of titanium which contacts said titanium silicide film in said contact hole, a metal nitride film thereon and a relatively thick film of a different metal material therefrom on said metal nitride film.
Claim 25
Dependent Claim
21 words
A semiconductor device according to claim 9, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 26
Dependent Claim
53 words
A semiconductor device according to claim 8, wherein said wiring metal is a composite metal layer including a film layer of titanium which contacts said titanium silicide film in said contact hole, a metal nitride film thereon and a relatively thick film of a different metal material therefrom on said metal nitride film.
Claim 27
Dependent Claim
21 words
A semiconductor device according to claim 12, wherein said wiring metal contains titanium in its surface contacting said titanium silicide film.
Claim 28
Dependent Claim
49 words
A semiconductor device according to claim 11, wherein said gate electrode is a polycrystal silicon film layer, and wherein said wiring metal is a composite metal layer including a film layer of titanium which contacts said titanium silicide film in said contact hole and a metal nitride film thereon.
Claim 29
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 30
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 31
Dependent Claim
23 words
A semiconductor device according to claim 2, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 32
Dependent Claim
23 words
A semiconductor device according to claim 2, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 33
Dependent Claim
23 words
A semiconductor device according to claim 3, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 34
Dependent Claim
23 words
A semiconductor device according to claim 3, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 35
Dependent Claim
23 words
A semiconductor device according to claim 4, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 36
Dependent Claim
23 words
A semiconductor device according to claim 4, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 37
Dependent Claim
23 words
A semiconductor device according to claim 5, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 38
Dependent Claim
23 words
A semiconductor device according to claim 5, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 39
Dependent Claim
23 words
A semiconductor device according to claim 6, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 40
Dependent Claim
23 words
A semiconductor device according to claim 6, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 41
Dependent Claim
23 words
A semiconductor device according to claim 7, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 42
Dependent Claim
23 words
A semiconductor device according to claim 7, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 43
Dependent Claim
23 words
A semiconductor device according to claim 8, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 44
Dependent Claim
23 words
A semiconductor device according to claim 8, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 45
Dependent Claim
23 words
A semiconductor device according to claim 9, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 46
Dependent Claim
23 words
A semiconductor device according to claim 9, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 47
Dependent Claim
23 words
A semiconductor device according to claim 10, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 48
Dependent Claim
23 words
A semiconductor device according to claim 10, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 49
Dependent Claim
23 words
A semiconductor device according to claim 11, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 50
Dependent Claim
23 words
A semiconductor device according to claim 11, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 51
Dependent Claim
23 words
A semiconductor device according to claim 12, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 52
Dependent Claim
23 words
A semiconductor device according to claim 12, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
Claim 53
Dependent Claim
23 words
A semiconductor device according to claim 13, wherein said contact hole has a hole opening diameter equal to or less than 0.4 μm.
Claim 54
Dependent Claim
23 words
A semiconductor device according to claim 13, wherein said contact hole has a hole opening diameter equal to or less than 0.3 μm.
References Cited (Backward Citations)
US4562640A
Cited
US5414301A
Cited
US4994410A
Cited
US5166771A
Cited
US5475240A
Cited
DE4238080A1
Cited
US5486481A
Cited
US5382533A
Cited
US5834846A
Cited
US5484747A
Cited
US5801095A
Cited
US5851912A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-28 | 2003-08-30 | 2004-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-28 | 2007-08-30 | 2008-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-28 | 2011-08-30 | 2012-02-29 | $7700.00 | Window Closed / Lapsed |