US6028436A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming coaxial silicon interconnects
Assignee: Micron Technology Inc
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Filing: 1997-12-02
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Granted: 2000-02-22
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Expires: 2017-12-02
Abstract
Abstract An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon containing insulation and a metal for shielding the trace from "cross-talk" and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.
Inventors
- 👤 Salman Akram
- 👤 David R. Hembree
- 👤 Alan G. Wood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:53
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2886; G01R1/00; G01R1/02; G01R1/04; G01R1/0408
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
110 words
An apparatus for testing a circuit of a semiconductor device, comprising: a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having at least one bond pad thereon; at least one raised contact member positioned on said substrate surface for contact with said at least one bond pad of said semiconductor device; at least one conductive trace connected to said at least one raised contact member; a second insulative layer overlying said at least one trace; and a conductive layer overlying said second insulative layer and said at least one conductive trace to provide shielding to said at least one conductive trace.
Claim 2
Independent Claim
110 words
An apparatus for testing a circuit of a semiconductor device, comprising: a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having at least one bond pad thereon; at least one raised contact member positioned on said substrate surface for contact with said at least one bond pad of said semiconductor device; at least one conductive trace connected to said at least one raised contact member; a second insulative layer overlying said at least one trace; and a conductive layer overlying said second insulative layer and said at least one conductive trace to provide shielding to said at least one conductive trace.
Claim 3
Dependent Claim
42 words
The apparatus of claim 1, wherein said second insulative layer and said conductive layer comprise substantially continuous layers overlying said at least one trace, substrate between said at least one trace, and non-contact portions of said at least one raised contact member.
Claim 4
Dependent Claim
20 words
The apparatus of claim 1, wherein said conductive layer comprises one of aluminum, titanium, tungsten, cobalt, nickel, molybdenum, and copper.
Claim 5
Dependent Claim
13 words
The apparatus of claim 1, wherein said second insulative layer comprises silicon dioxide.
Claim 6
Dependent Claim
13 words
The apparatus of claim 1, wherein said second insulative layer comprises silicon nitride.
Claim 7
Dependent Claim
11 words
The apparatus of claim 1, wherein said substrate comprises a semiconductor.
Claim 8
Dependent Claim
11 words
The apparatus of claim 1, wherein said substrate comprises silicon dioxide.
Claim 9
Dependent Claim
26 words
The apparatus of claim 1, wherein said at least one raised contact member includes a projecting apex and a stop plane adjacent to said projecting apex.
Claim 10
Independent Claim
133 words
An apparatus for testing a circuit of a semiconductor device, comprising: a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having a plurality of bond pads thereon; a plurality of raised contact members positioned on said substrate surface for contact with at least one bond pad of said plurality of bond pads of said semiconductor device; a plurality of conductive traces, at least one of said plurality of conductive traces connected to at least one raised contact member of said plurality of raised contact members; a second insulative layer substantially overlying each trace of said plurality of traces; and a conductive layer overlying said second insulative layer and each said conductive trace of said plurality of traces to provide shielding to each said trace.
Claim 11
Independent Claim
133 words
An apparatus for testing a circuit of a semiconductor device, comprising: a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having a plurality of bond pads thereon; a plurality of raised contact members positioned on said substrate surface for contact with at least one bond pad of said plurality of bond pads of said semiconductor device; a plurality of conductive traces, at least one of said plurality of conductive traces connected to at least one raised contact member of said plurality of raised contact members; a second insulative layer substantially overlying each trace of said plurality of traces; and a conductive layer overlying said second insulative layer and each said conductive trace of said plurality of traces to provide shielding to each said trace.
Claim 12
Dependent Claim
38 words
The apparatus of claim 9, wherein said second insulative layer and said conductive layer comprise continuous layers overlying said plurality of traces, substrate between said plurality of traces and non-contact portions of said plurality of raised contact members.
Claim 13
Dependent Claim
20 words
The apparatus of claim 9, wherein said conductive layer comprises one of aluminum, titanium, tungsten, cobalt, nickel, molybdenum, and copper.
Claim 14
Dependent Claim
13 words
The apparatus of claim 9, wherein said second insulation layer comprises silicon dioxide.
Claim 15
Dependent Claim
13 words
The apparatus of claim 9, wherein said second insulative layer comprises silicon nitride.
Claim 16
Dependent Claim
11 words
The apparatus of claim 9, wherein said substrate comprises a semiconductor.
Claim 17
Dependent Claim
11 words
The apparatus of claim 9, wherein said substrate comprises silicon dioxide.
Claim 18
Dependent Claim
29 words
The apparatus of claim 9, wherein at least one of said plurality of raised contact members includes a projecting apex and a stop plane adjacent to said projecting apex.
Claim 19
Independent Claim
105 words
An apparatus for testing a circuit of a semiconductor device, comprising: a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having a plurality of bond pads thereon; a plurality of raised contact members positioned on said substrate surface for contact with said plurality of bond pads; a plurality of conductive traces, at least one conductive trace of said plurality of traces connected to at least one contact member of said plurality of raised contact members; a second insulative layer overlying each trace of said plurality of traces; and a conductive layer overlying said second insulative layer.
Claim 20
Independent Claim
105 words
An apparatus for testing a circuit of a semiconductor device, comprising: a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having a plurality of bond pads thereon; a plurality of raised contact members positioned on said substrate surface for contact with said plurality of bond pads; a plurality of conductive traces, at least one conductive trace of said plurality of traces connected to at least one contact member of said plurality of raised contact members; a second insulative layer overlying each trace of said plurality of traces; and a conductive layer overlying said second insulative layer.
Claim 21
Dependent Claim
39 words
The apparatus of claim 17, wherein said second insulative layer and said conductive layer comprise substantially continuous layers overlying said plurality of traces, substrate between said plurality of traces and non-contact portions of said plurality of raised contact members.
Claim 22
Dependent Claim
20 words
The apparatus of claim 17, wherein said conductive layer comprises one of aluminum, titanium, tungsten, cobalt, nickel, molybdenum, and copper.
Claim 23
Dependent Claim
13 words
The apparatus of claim 17, wherein said second insulative layer comprises silicon dioxide.
Claim 24
Dependent Claim
13 words
The apparatus of claim 17, wherein said second insulative layer comprises silicon nitride.
Claim 25
Dependent Claim
11 words
The apparatus of claim 17, wherein said substrate comprises a semiconductor.
Claim 26
Dependent Claim
11 words
The apparatus of claim 17, wherein said substrate comprises silicon dioxide.
Claim 27
Dependent Claim
31 words
The apparatus of claim 17, wherein substantially each raised contact member of said plurality of raised contact members includes a projecting apex and a stop plane adjacent to said projecting apex.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-21 | 2003-08-23 | 2004-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-21 | 2007-08-23 | 2008-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-21 | 2011-08-23 | 2012-02-22 | $7700.00 | Window Closed / Lapsed |