Patent US6017780A successfully refreshed from Google Patents.
US6017780A
Expired / Lapsed
US
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Passivation scheme for LCD and other applications
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 1998-07-06
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Granted: 2000-01-25
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Expires: 2018-07-06
Abstract
Abstract A process for planarizing a passivation layer in order to maintain a uniform gap between the passivation layer of a bottom substrate and the top substrate of a LCD integrated circuit device is described. Semiconductor device structures in and on a semiconductor substrate wherein the semiconductor device structures are covered by an insulating layer. A metal layer is deposited and patterned to form metal lines wherein there is a gap between two of the metal lines. A passivation layer is deposited overlying the metal lines wherein the gap is not filled by the passivation layer. A layer of high density plasma oxide is deposited overlying the passivation layer and polished to leave the high density plasma oxide within the gap and to leave a planarized passivation layer surface. This will also a precise gap to be maintained in which to build the liquid crystal display material between the top substrate and the passivation layer of the bottom substrate.
Inventors
- 👤 Sudipto Ranendra Roy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:13
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136227; H; H10; H10P; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
107 words
A method of fabricating an integrated circuit device comprising: providing an insulating layer overlying a semiconductor substrate; depositing and patterning a metal layer overlying said insulating layer to form metal lines wherein there is a gap between two of said metal lines; depositing a passivation layer overlying said metal lines wherein said gap is not filled by said passivation layer; depositing a layer of high density plasma oxide overlying said passivation layer; and polishing said high density plasma oxide layer to leave said high density plasma oxide filling said gap and to leave a planarized passivation layer surface to complete the fabrication of said integrated circuit device.
Claim 2
Independent Claim
107 words
A method of fabricating an integrated circuit device comprising: providing an insulating layer overlying a semiconductor substrate; depositing and patterning a metal layer overlying said insulating layer to form metal lines wherein there is a gap between two of said metal lines; depositing a passivation layer overlying said metal lines wherein said gap is not filled by said passivation layer; depositing a layer of high density plasma oxide overlying said passivation layer; and polishing said high density plasma oxide layer to leave said high density plasma oxide filling said gap and to leave a planarized passivation layer surface to complete the fabrication of said integrated circuit device.
Claim 3
Dependent Claim
41 words
The method according to claim 1 wherein said semiconductor device structures including gate electrodes and associated source and drain regions and multiple layers of metal lines and intermetal dielectric are formed in and on said semiconductor substrate underlying said insulating layer.
Claim 4
Dependent Claim
49 words
The method according to claim 1 wherein said integrated circuit device is a liquid crystal display and wherein said metal lines are pixels and further comprising: forming a liquid crystal material layer overlying said planarized passivation layer; and attaching a second semiconductor substrate overlying said liquid crystal material layer.
Claim 5
Dependent Claim
42 words
The method according to claim 1 wherein said step of depositing said passivation layer comprises: depositing a first conformal layer of undoped silicate glass overlying said metal lines; and depositing as second layer of silicon nitride overlying said undoped silicate glass layer.
Claim 6
Dependent Claim
22 words
The method according to claim 4 wherein said undoped silicate glass layer has a thickness of between about 500 and 1000 Angstroms.
Claim 7
Dependent Claim
21 words
The method according to claim 4 wherein said silicon nitride layer has a thickness of between about 2000 and 3000 Angstroms.
Claim 8
Dependent Claim
39 words
The method according to claim 1 further comprising depositing a layer of tetraethoxysilane (TEOS) oxide overlying said high density plasma oxide and wherein said polishing step polishes both said TEOS oxide layer and said high density plasma oxide layer.
Claim 9
Dependent Claim
23 words
The method according to claim 1 wherein said step of polishing said high density plasma oxide layer is performed by chemical mechanical polishing.
Claim 10
Dependent Claim
28 words
The method according to claim 1 wherein said step of polishing said high density plasma oxide layer has a polish stop within said high density plasma oxide layer.
Claim 11
Dependent Claim
26 words
The method according to claim 7 wherein said step of polishing said high density plasma oxide layer has a polish stop within said TEOS oxide layer.
Claim 12
Dependent Claim
25 words
The method according to claim 1 wherein said step of polishing said high density plasma oxide layer has a polish stop at said passivation layer.
Claim 13
Dependent Claim
26 words
The method according to claim 4 wherein said step of polishing said high density plasma oxide layer has a polish stop at said silicon nitride layer.
Claim 14
Dependent Claim
27 words
The method according to claim 4 wherein said step of polishing said high density plasma oxide layer has a polish stop at said undoped silicate glass layer.
Claim 15
Independent Claim
145 words
A method of fabricating a liquid crystal display integrated circuit device comprising: providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures are covered by an insulating layer; depositing and patterning a metal layer overlying said insulating layer to form pixels wherein there is a gap between two of said pixels; depositing a passivation layer overlying said pixels wherein said gap is not filled by said passivation layer; depositing a layer of high density plasma oxide overlying said passivation layer; polishing said high density plasma oxide layer to leave said high density plasma oxide filling said gap and to leave a planarized passivation layer surface; forming a liquid crystal material layer overlying said planarized passivation layer; and attaching a second semiconductor substrate overlying said liquid crystal material layer to complete the fabrication of said liquid crystal display integrated circuit device.
Claim 16
Independent Claim
145 words
A method of fabricating a liquid crystal display integrated circuit device comprising: providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures are covered by an insulating layer; depositing and patterning a metal layer overlying said insulating layer to form pixels wherein there is a gap between two of said pixels; depositing a passivation layer overlying said pixels wherein said gap is not filled by said passivation layer; depositing a layer of high density plasma oxide overlying said passivation layer; polishing said high density plasma oxide layer to leave said high density plasma oxide filling said gap and to leave a planarized passivation layer surface; forming a liquid crystal material layer overlying said planarized passivation layer; and attaching a second semiconductor substrate overlying said liquid crystal material layer to complete the fabrication of said liquid crystal display integrated circuit device.
Claim 17
Dependent Claim
29 words
The method according to claim 14 wherein said semiconductor device structures include gate electrodes and associated source and drain regions and multiple layers of metal lines and intermetal dielectric.
Claim 18
Dependent Claim
42 words
The method according to claim 14 wherein said step of depositing said passivation layer comprises: depositing a first conformal layer of undoped silicate glass overlying said metal lines; and depositing as second layer of silicon nitride overlying said undoped silicate glass layer.
Claim 19
Dependent Claim
39 words
The method according to claim 14 further comprising depositing a layer of tetraethoxysilane (TEOS) oxide overlying said high density plasma oxide and wherein said polishing step polishes both said TEOS oxide layer and said high density plasma oxide layer.
Claim 20
Dependent Claim
23 words
The method according to claim 14 wherein said step of polishing said high density plasma oxide layer is performed by chemical mechanical polishing.
Claim 21
Independent Claim
165 words
A method of fabricating a liquid crystal display integrated circuit device comprising: providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures are covered by an insulating layer; depositing and patterning a metal layer overlying said insulating layer to form pixels wherein there is a gap between two of said pixels; depositing a passivation layer overlying said pixels wherein said passivation layer comprises a first layer of undoped silicate glass and a second layer of silicon nitride and wherein said gap is not filled by said passivation layer; depositing a layer of high density plasma oxide overlying said passivation layer; polishing said high density plasma oxide layer to leave said high density plasma oxide within said gap and to leave a planarized passivation layer surface; forming a liquid crystal material layer overlying said planarized passivation layer; and attaching a second semiconductor substrate overlying said liquid crystal material layer to complete the fabrication of said liquid crystal display integrated circuit device.
Claim 22
Independent Claim
165 words
A method of fabricating a liquid crystal display integrated circuit device comprising: providing semiconductor device structures in and on a semiconductor substrate wherein said semiconductor device structures are covered by an insulating layer; depositing and patterning a metal layer overlying said insulating layer to form pixels wherein there is a gap between two of said pixels; depositing a passivation layer overlying said pixels wherein said passivation layer comprises a first layer of undoped silicate glass and a second layer of silicon nitride and wherein said gap is not filled by said passivation layer; depositing a layer of high density plasma oxide overlying said passivation layer; polishing said high density plasma oxide layer to leave said high density plasma oxide within said gap and to leave a planarized passivation layer surface; forming a liquid crystal material layer overlying said planarized passivation layer; and attaching a second semiconductor substrate overlying said liquid crystal material layer to complete the fabrication of said liquid crystal display integrated circuit device.
Claim 23
Dependent Claim
29 words
The method according to claim 19 wherein said semiconductor device structures include gate electrodes and associated source and drain regions and multiple layers of metal lines and intermetal dielectric.
Claim 24
Dependent Claim
39 words
The method according to claim 19 further comprising depositing a layer of tetraethoxysilane (TEOS) oxide overlying said high density plasma oxide and wherein said polishing step polishes both said TEOS oxide layer and said high density plasma oxide layer.
Claim 25
Dependent Claim
23 words
The method according to claim 19 wherein said step of polishing said high density plasma oxide layer is performed by chemical mechanical polishing.
Claim 26
Dependent Claim
28 words
The method according to claim 19 wherein said step of polishing said high density plasma oxide layer has a polish stop within said high density plasma oxide layer.
Claim 27
Dependent Claim
26 words
The method according to claim 21 wherein said step of polishing said high density plasma oxide layer has a polish stop within said TEOS oxide layer.
Claim 28
Dependent Claim
26 words
The method according to claim 19 wherein said step of polishing said high density plasma oxide layer has a polish stop at said silicon nitride layer.
Claim 29
Dependent Claim
27 words
The method according to claim 19 wherein said step of polishing said high density plasma oxide layer has a polish stop at said undoped silicate glass layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-24 | 2003-07-26 | 2004-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-24 | 2007-07-26 | 2008-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-24 | 2011-07-26 | 2012-01-25 | $7700.00 | Window Closed / Lapsed |