US5928960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for reducing pattern factor effects in CMP planarization
Assignee: International Business Machines Corp
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Filing: 1996-10-24
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Granted: 1999-07-27
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Expires: 2016-10-24
Abstract
Abstract According to the present invention, an improved method for planarizing the surface of a dielectric or metal layer in an integrated circuit manufacturing process is disclosed. The dielectric or metal layer to be planarized is selectively patterned and etched over different regions of the surface. The size, shape, density, and depth of the patterns are determined by the pattern factor of the integrated circuit structures underlying the layer to be planarized. Further, by using the pattern factor of the underlying structures to determine the density, size, depth and placement of the surface pattern, the overall planarization process can be improved. Other empirically determined factors, such as material strength, CMP slurry temperature, and pad pressure can also be used to further refine the CMP process. By varying the pattern over the entire surface of the layer to be planarized, the CMP material removal rate can be controlled to achieve a more planar surface.
Inventors
- 👤 Nancy Anne Greco
- 👤 Stephen Edward Greco
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:30
CPC Classifications
H; H10; H10P; H10P52/00; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
148 words
A method of removing excess material from and planarizing a dielectric layer deposited over a patterned metal layer on a semiconductor wafer, the patterned metal layer having a plurality of metal structures and having a plurality of gaps between adjacent metal structures, the dielectric layer filling the gaps between adjacent metal structures and overlying the plurality of metal structures, the method comprising the steps of: etching a plurality of openings in the overlying dielectric layer to form a pattern on the surface of the overlying dielectric layer, wherein the step of etching a plurality of openings comprises etching a greater number of openings in the overlying dielectric wider width above relatively larger metal structures than the number of openings etched in the overlying dielectric layer above relatively narrower width metal structures; and planarizing the surface of the etched overlying dielectric layer by using a chemical mechanical polishing process.
Claim 2
Independent Claim
148 words
A method of removing excess material from and planarizing a dielectric layer deposited over a patterned metal layer on a semiconductor wafer, the patterned metal layer having a plurality of metal structures and having a plurality of gaps between adjacent metal structures, the dielectric layer filling the gaps between adjacent metal structures and overlying the plurality of metal structures, the method comprising the steps of: etching a plurality of openings in the overlying dielectric layer to form a pattern on the surface of the overlying dielectric layer, wherein the step of etching a plurality of openings comprises etching a greater number of openings in the overlying dielectric wider width above relatively larger metal structures than the number of openings etched in the overlying dielectric layer above relatively narrower width metal structures; and planarizing the surface of the etched overlying dielectric layer by using a chemical mechanical polishing process.
Claim 3
Independent Claim
147 words
A method of removing excess material from and planarizing a metal layer deposited over a patterned dielectric layer on a semiconductor wafer, the patterned dielectric layer having a plurality of dielectric structures and having a plurality of gaps between adjacent dielectric structures, the dielectric layer filling the gaps between adjacent dielectric structures and overlying the plurality of dielectric structures, the method comprising the steps of: etching a plurality of openings in the overlying metal layer to form a pattern on the surface of the overlying metal layer, wherein the step of etching a plurality of openings comprises etching a greater number of openings in the overlying metal layer above relatively wider width dielectric structures than the number of openings etched in the metal layer above relatively narrower width dielectric structures; and planarizing the surface of the etched overlying metal layer by using a chemical mechanical polishing process.
Claim 4
Independent Claim
147 words
A method of removing excess material from and planarizing a metal layer deposited over a patterned dielectric layer on a semiconductor wafer, the patterned dielectric layer having a plurality of dielectric structures and having a plurality of gaps between adjacent dielectric structures, the dielectric layer filling the gaps between adjacent dielectric structures and overlying the plurality of dielectric structures, the method comprising the steps of: etching a plurality of openings in the overlying metal layer to form a pattern on the surface of the overlying metal layer, wherein the step of etching a plurality of openings comprises etching a greater number of openings in the overlying metal layer above relatively wider width dielectric structures than the number of openings etched in the metal layer above relatively narrower width dielectric structures; and planarizing the surface of the etched overlying metal layer by using a chemical mechanical polishing process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-26 | 2003-01-25 | 2003-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-26 | 2007-01-25 | 2007-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-26 | 2011-01-25 | 2011-07-27 | $7700.00 | Window Closed / Lapsed |