US5437763A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for formation of contact vias in integrated circuits
Assignee: STMicroelectronics lnc USA
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Filing: 1994-10-06
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Granted: 1995-08-01
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Expires: 2014-10-06
Abstract
Abstract A method for forming contact vias in a integrated circuit which do not have planarizing material nearby. After a first insulating layer is deposited over the integrated circuit, a planarizing layer is deposited over the first insulating layer. The planarizing layer is etched back and portions of the planarizing layer may remain in the lower topographical regions of the first insulating layer to planarize the surface of the integrated circuit. A first masking layer is then formed over the surface of the integrated circuit. The openings created in the first masking layer have a size which is greater than the size of the contact vias to be formed. The first insulating layer is partially etched into so that portions of the planarizing layer near the locations of the contact vias are removed. The first masking layer is then removed, and a second insulating layer is deposited over the integrated circuit. A second masking layer having openings which define the locations of the contact vias to be created is then formed over the second insulating layer. The size of the openings in the second masking layer are smaller than the size of the openings in the first masking layer. The contact vias are then formed through the first and second insulating layers.
Inventors
- 👤 Kuei-Wu Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
95 words
A method for forming contact vias in an integrated circuit, comprising the steps of: forming a first insulating layer containing planarizing material on the upper surface thereof over an underlying region in the integrated circuit; partially etching into the first insulating layer at the locations of the contact vias to be formed, wherein the first insulating layer is etched deep enough to remove the planarizing material; forming a second insulating layer over the integrated circuit; and forming the contact vias through the first and second insulating layers to expose a portion of the underlying region.
Claim 2
Independent Claim
95 words
A method for forming contact vias in an integrated circuit, comprising the steps of: forming a first insulating layer containing planarizing material on the upper surface thereof over an underlying region in the integrated circuit; partially etching into the first insulating layer at the locations of the contact vias to be formed, wherein the first insulating layer is etched deep enough to remove the planarizing material; forming a second insulating layer over the integrated circuit; and forming the contact vias through the first and second insulating layers to expose a portion of the underlying region.
Claim 3
Dependent Claim
43 words
The method of claim 1, further comprising the steps of depositing and patterning a conductive layer over portions of the second insulating layer, wherein the conductive layer extends into the contact vias to make electrical contact with a portion of the underlying region.
Claim 4
Dependent Claim
49 words
The method of claim 1, wherein said step of forming the first insulating layer containing planarizing material comprises the steps of: depositing a layer of oxide over the integrated circuit; depositing a layer of spin on glass over the layer of oxide; and anisotropically etching the spin on glass.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein said step of partially etching into the first insulating layer comprises anisotropically etching the layer.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein said step of forming a second insulating layer comprises depositing a layer of oxide over the integrated circuit.
Claim 7
Dependent Claim
23 words
The method of claim 1, wherein said step of forming the contact vias comprises anisotropically etching through the first and second insulating layers.
Claim 8
Dependent Claim
18 words
The method of claim 1, wherein said underlying region comprises an interconnect layer formed on a semiconductor substrate.
Claim 9
Dependent Claim
13 words
The method of claim 7, wherein said interconnect layer comprises a metal interconnect.
Claim 10
Independent Claim
184 words
A method for forming contact vias in an integrated circuit, comprising the steps of: forming conductive elements of an underlying region in the integrated circuit; forming a first insulating layer over the integrated circuit; forming a planarizing layer over the first insulating layer; forming a first masking layer over the integrated circuit; patterning the first masking layer to define openings, wherein the size of the openings are larger than the size of the contact vias to be formed; removing a portion of the first insulating layer and any remaining portions of the planarizing layer within the opening; removing the first masking layer; forming a second insulating layer over the integrated circuit; forming a second masking layer over the second insulating layer; patterning the second masking layer to form openings which define the locations of the contact vias to be formed, wherein the size of openings in the second masking layer are smaller than the size of the openings made in the first masking layer; and forming the contact vias through the first and second insulating layers to expose a portion of the conductive elements.
Claim 11
Independent Claim
184 words
A method for forming contact vias in an integrated circuit, comprising the steps of: forming conductive elements of an underlying region in the integrated circuit; forming a first insulating layer over the integrated circuit; forming a planarizing layer over the first insulating layer; forming a first masking layer over the integrated circuit; patterning the first masking layer to define openings, wherein the size of the openings are larger than the size of the contact vias to be formed; removing a portion of the first insulating layer and any remaining portions of the planarizing layer within the opening; removing the first masking layer; forming a second insulating layer over the integrated circuit; forming a second masking layer over the second insulating layer; patterning the second masking layer to form openings which define the locations of the contact vias to be formed, wherein the size of openings in the second masking layer are smaller than the size of the openings made in the first masking layer; and forming the contact vias through the first and second insulating layers to expose a portion of the conductive elements.
Claim 12
Dependent Claim
29 words
The method of claim 9, wherein said step of forming conductive elements on the underlying region comprises depositing a layer of metal and patterning it to define metal interconnect.
Claim 13
Dependent Claim
13 words
The method of claim 10, wherein said underlying region comprises a semiconductor substrate.
Claim 14
Dependent Claim
24 words
The method of claim 9, wherein said step of forming the first insulating layer comprises depositing a layer of oxide over the integrated circuit.
Claim 15
Dependent Claim
25 words
The method of claim 9, wherein said step of forming the planarizing layer comprises depositing a layer of spin on glass over the dielectric layer.
Claim 16
Dependent Claim
26 words
The method of claim 9, wherein prior to forming the first masking layer the planarizing layer is etched in order to make the planarizing layer thinner.
Claim 17
Dependent Claim
12 words
The method of claim 14, wherein the planarizing layer is anisotropically etched.
Claim 18
Dependent Claim
23 words
The method of claim 9, wherein said step of forming a first masking layer comprises depositing a photoresist layer over the integrated circuit.
Claim 19
Dependent Claim
30 words
The method of claim 9, wherein said step of removing a portion of the first insulating layer and any remaining portions of the planarizing layer comprises anisotropically etching said layers.
Claim 20
Dependent Claim
24 words
The method of claim 9, wherein said step of forming the second insulating layer comprises depositing a layer of oxide over the integrated circuit.
Claim 21
Dependent Claim
23 words
The method of claim 9, wherein said step of forming a second masking layer comprises depositing a photoresist layer over the insulating layer.
Claim 22
Dependent Claim
27 words
The method of claim 9, wherein said step of forming the contact vias comprises anisotropically etching the contact vias to expose a portion of the conductive elements.
Claim 23
Dependent Claim
46 words
The method of claim 9, further comprising the steps of: removing the second masking layer; and depositing and patterning a conductive layer over a portion of the insulating layer, wherein the conductive layer extends into the contact vias conductive layer electrical contact with the conductive elements.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-31 | 1999-01-30 | 1999-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-31 | 2003-01-30 | 2003-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-31 | 2007-01-30 | 2007-08-01 | $7700.00 | Window Closed / Lapsed |