Patent US6013134A successfully refreshed from Google Patents.
US6013134A
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Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
Assignee: Google LLC
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Filing: 1998-02-18
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Granted: 2000-01-11
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Expires: 2018-02-18
Abstract
Abstract An apparatus for forming a portion of an electronic device is described incorporating an Ultra High Vacuum-Chemical Vapor Deposition (UHV-CVD) system, a Low Pressure-Chemical Vapor Deposition (LP-CVD) system, and an Ultra High Vacuum (UHV) transfer system. A method for passivating a semiconductor substrate is described incorporating growing silicon containing layers, flowing a hydrogen containing gas and lowering the substrate temperature below 400° C. A method for removing native oxide is described. A method for growing a continuous epitaxial layer while performing a deposition interrupt is described. A method for forming a Si/Si oxide interface is described having low interface trap density. A method for forming a Si/Si oxide/p++ polysilicon gate stack. The invention overcomes the problem of requiring silicon containing wafers being dipped in HF acid prior to CVD processing. The invention overcomes the problem of surface passivation between in-situ processes in multiple CVD reactors.
Inventors
- 👤 Jack Oon Chu
- 👤 Khalid EzzEldin Ismail
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:47
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/02; C23C16/0209; C23C16/0227; C23C16/22; C23C16/24; C30; C30B; C30B25/00; C30B25/02; C30B25/08; Y; Y10; Y10S; Y10S414/00; Y10S414/135; Y10S414/137; Y10S414/138; Y10S414/139
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
130 words
An apparatus for forming at least a portion of a semiconductor device comprising: an Ultra High Vacuum-Chemical Vapor Deposition (UHV-CVD) system for forming epitaxial silicon containing layers, a Low Pressure-Chemical Vapor deposition (LP-CVD) system for prebaking a plurality of wafers vertically oriented in a boat in a hydrogen containing gas and for forming epitaxial silicon containing layers, and an Ultra High Vacuum (UHV) transfer system coupled to said UHV-CVD system and said LP-CVD system for transferring said plurality of wafers in a boat to and from said UHV-CVD system and said LP-CVD system under UHV pressure, said Ultra High Vacuum (UHV) transfer system including a cold trap for trapping contaminants and a cryogenic pump for removing contaminants and a turbomolecular pump to provide a base pressure of 10 -9 Torr.
Claim 2
Independent Claim
130 words
An apparatus for forming at least a portion of a semiconductor device comprising: an Ultra High Vacuum-Chemical Vapor Deposition (UHV-CVD) system for forming epitaxial silicon containing layers, a Low Pressure-Chemical Vapor deposition (LP-CVD) system for prebaking a plurality of wafers vertically oriented in a boat in a hydrogen containing gas and for forming epitaxial silicon containing layers, and an Ultra High Vacuum (UHV) transfer system coupled to said UHV-CVD system and said LP-CVD system for transferring said plurality of wafers in a boat to and from said UHV-CVD system and said LP-CVD system under UHV pressure, said Ultra High Vacuum (UHV) transfer system including a cold trap for trapping contaminants and a cryogenic pump for removing contaminants and a turbomolecular pump to provide a base pressure of 10 -9 Torr.
Claim 3
Dependent Claim
33 words
The apparatus of claim 1 further including a load-lock coupled to said UHV transfer system for transferring a plurality of wafers in a boat between said UHV transfer system and the external ambient.
Claim 4
Dependent Claim
16 words
The apparatus of claim 1 further including additional UHV-CVD systems coupled to said UHV transfer system.
Claim 5
Dependent Claim
16 words
The apparatus of claim 1 further including additional LP-CVD systems coupled to said UHV transfer system.
Claim 6
Dependent Claim
45 words
The apparatus of claim 1 wherein said UHV-CVD system is positioned vertically below said LP-CVD system and wherein said UHV transfer system includes an elevator mechanism for raising and lowering said plurality of wafers in a boat from said UHV-CVD system to said LP-UHV system.
Claim 7
Dependent Claim
29 words
The apparatus of claim 1 wherein said cold trap will remove contaminants including O 2 , CO 2 , CO, H 2 O, CH 4 , and other hydrocarbons.
Claim 8
Dependent Claim
44 words
The apparatus of claim 1 wherein said UHV-CVD system is positioned horizontally beside said LP-CVD system and wherein said UHV transfer system include a mechanism for moving said plurality of wafers in a boat to and from said UHV-CVD system and said LP-CVD system.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-10 | 2003-07-12 | 2004-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-10 | 2007-07-12 | 2008-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-10 | 2011-07-12 | 2012-01-11 | $7700.00 | Window Closed / Lapsed |