US5407485A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for producing semiconductor device and method for producing semiconductor device
Assignee: FTL Co Ltd
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Filing: 1994-04-08
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Granted: 1995-04-18
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Expires: 2014-04-08
Abstract
Abstract In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.
Inventors
- 👤 Mikio Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:39
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; C; C23; C23C; C23C16/00; C23C16/44; C23C16/46
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
177 words
A production apparatus of a semiconductor device comprising: an upper high-temperature furnace having an open bottom; a lower low-temperature furnace having an open top and being arranged essentially coaxially with respect to said upper high-temperature furnace; a processing tube extending through said lower low-temperature furnace and having a closed top portion extending above said lower low-temperature furnace; a supporting means of a wafer, for supporting and vertically displacing at least one wafer in said processing tube; and, an openable, heat-insulating shutter for shutting the open bottom of said upper high-temperature furnace; and, a means for adjusting a relative vertical position of said upper high-temperature furnace and said lower low-temperature furnace within a distance range between a first distance, where said upper high-temperature furnace and said lower low-temperature furnace abut with one another to form an integral furnace, and a second distance, where said upper high-temperature furnace and said lower low-temperature furnace are separated in such a distance that said openable, heat-insulating shutter is interposed in a space between said upper high-temperature furnace and said lower low-temperature furnace.
Claim 2
Dependent Claim
177 words
A production apparatus of a semiconductor device comprising: an upper high-temperature furnace having an open bottom; a lower low-temperature furnace having an open top and being arranged essentially coaxially with respect to said upper high-temperature furnace; a processing tube extending through said lower low-temperature furnace and having a closed top portion extending above said lower low-temperature furnace; a supporting means of a wafer, for supporting and vertically displacing at least one wafer in said processing tube; and, an openable, heat-insulating shutter for shutting the open bottom of said upper high-temperature furnace; and, a means for adjusting a relative vertical position of said upper high-temperature furnace and said lower low-temperature furnace within a distance range between a first distance, where said upper high-temperature furnace and said lower low-temperature furnace abut with one another to form an integral furnace, and a second distance, where said upper high-temperature furnace and said lower low-temperature furnace are separated in such a distance that said openable, heat-insulating shutter is interposed in a space between said upper high-temperature furnace and said lower low-temperature furnace.
Claim 3
Dependent Claim
33 words
A production apparatus of a semiconductor device according to claim 1, wherein said upper high-temperature furnace consists of an electric heating furnace, and said lower low-temperature furnace consists of another electric heating furnace.
Claim 4
Dependent Claim
35 words
A production apparatus of a semiconductor device according to claim 1 or 2, wherein said openable, heat-insulating shutter comprises a cooling plate which is provided, on lower and upper surfaces, with a gold plated layer.
Claim 5
Dependent Claim
22 words
A production apparatus of a semiconductor device according to claim 3, wherein said gold plated layer is covered with a quartz cover.
Claim 6
Dependent Claim
38 words
A production apparatus of a semiconductor device according to claim 1 or 2, further comprising a gas-conduit opening at a top region of said processing tube and another gas-conduit opening at a bottom region of said processing tube.
Claim 7
Dependent Claim
38 words
A production apparatus of a semiconductor device according to claim 1 or 2, further comprising a reflective ring secured on the bottom of said upper high-temperature furnace and having an aperture capable of passing through said processing tube.
Claim 8
Dependent Claim
33 words
A production apparatus of a semiconductor device according to claim 5, wherein said openable, heat-insulating shutter comprises a cooling plate which is provided, on lower and upper surfaces, with a gold plated layer.
Claim 9
Dependent Claim
22 words
A production apparatus of a semiconductor device according to claim 6, wherein said gold plated layer is covered with a quartz cover.
Claim 10
Dependent Claim
37 words
A production apparatus of a semiconductor device according to claim 6, further comprising a gas-conduit opening at a top region of said processing tube and another gas conduit opening at a bottom region of said processing tube.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-17 | 2002-10-17 | 2003-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |