Device for forming deposited film

Claim 1

An apparatus for forming a deposited film on a substrate by bringing a gaseous starting material for forming the deposited film into contact with a gaseous oxidizing agent having the property of oxidizing said gaseous starting material thereby to form said deposited film comprising: a plural number of chambers in which to form the deposited film, said chambers arranged in a circular form and being in communication with adjacent chambers through a gas mixing preventing means positioned therebetween, each of said chambers including: a gas releasing means including a plurality of first orifices for introducing said gaseous starting material to said chamber and a plurality of second orifices for introducing said gaseous oxidizing agent to said chamber, said plurality of first orifices and said plurality of second orifices being positioned alternately to each other in said chamber to create a sufficient reaction mixture between said gaseous starting material and said gaseous oxidizing agent to generate a plurality of precursors including at least one excited precursor in an excited state, wherein said at least one precursor functions as the feeding source for the constituent element of said film; said gaseous starting material being at least one selected from the group consisting of straight chain silane compounds having the formula Si n H 2n-2 where n=1 to 8, SiH 3 SiH(SiH 3 )SiH 2 SiH 3 , and cyclic silane compounds having the formula Si m H 2m , where m=3, 4, 5, 6; said gaseous oxidizing agent being at least one selected from the group consisting of oxygen, ozone, air, N 2 O 4 , N 2 O 3 , NO 2 , NO, H 2 O 2 , F 2 , Cl 2 , Br 2 , I 2 and ClF; means for positioning said substrate in each of said plurality of chambers; means for conveying said substrate; means for heating said substrate; and an exhaust opening which communicates with said chamber.

Claim 2

An apparatus for forming a deposited film on a substrate by bringing a gaseous starting material for forming the deposited film into contact with a gaseous oxidizing agent having the property of oxidizing said gaseous starting material thereby to form said deposited film comprising: a plural number of chambers in which to form the deposited film, said chambers arranged in a circular form and being in communication with adjacent chambers through a gas mixing preventing means positioned therebetween, each of said chambers including: a gas releasing means including a plurality of first orifices for introducing said gaseous starting material to said chamber and a plurality of second orifices for introducing said gaseous oxidizing agent to said chamber, said plurality of first orifices and said plurality of second orifices being positioned alternately to each other in said chamber to create a sufficient reaction mixture between said gaseous starting material and said gaseous oxidizing agent to generate a plurality of precursors including at least one excited precursor in an excited state, wherein said at least one precursor functions as the feeding source for the constituent element of said film; said gaseous starting material being at least one selected from the group consisting of straight chain silane compounds having the formula Si n H 2n-2 where n=1 to 8, SiH 3 SiH(SiH 3 )SiH 2 SiH 3 , and cyclic silane compounds having the formula Si m H 2m , where m=3, 4, 5, 6; said gaseous oxidizing agent being at least one selected from the group consisting of oxygen, ozone, air, N 2 O 4 , N 2 O 3 , NO 2 , NO, H 2 O 2 , F 2 , Cl 2 , Br 2 , I 2 and ClF; means for positioning said substrate in each of said plurality of chambers; means for conveying said substrate; means for heating said substrate; and an exhaust opening which communicates with said chamber.