Patent US5985741A successfully refreshed from Google Patents.
US5985741A
Expired / Lapsed
US
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Semiconductor device and method of fabricating the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-03-20
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Granted: 1999-11-16
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Expires: 2017-03-20
Abstract
Abstract A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D30/6745; H10D62/00; H10D62/40; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
100 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one first portion of said semiconductor layer; crystallizing the semiconductor layer by using said promoting material wherein crystallization proceeds through said semiconductor layer from said first portion and terminates at a second portion of the semiconductor layer; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions includes said second portion of the semiconductor layer.
Claim 2
Independent Claim
100 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one first portion of said semiconductor layer; crystallizing the semiconductor layer by using said promoting material wherein crystallization proceeds through said semiconductor layer from said first portion and terminates at a second portion of the semiconductor layer; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions includes said second portion of the semiconductor layer.
Claim 3
Independent Claim
78 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one portion of said semiconductor layer; crystallizing the semiconductor layer by using said promoting material; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions include said one portion of the semiconductor layer.
Claim 4
Independent Claim
78 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one portion of said semiconductor layer; crystallizing the semiconductor layer by using said promoting material; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions include said one portion of the semiconductor layer.
Claim 5
Independent Claim
59 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions includes a portion where a metal containing crystallization promoting material has been directly applied thereto.
Claim 6
Independent Claim
59 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions includes a portion where a metal containing crystallization promoting material has been directly applied thereto.
Claim 7
Independent Claim
86 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least two portions of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions includes a portion at which crystals growing from said two portions meet with each other.
Claim 8
Independent Claim
86 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least two portions of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material; forming source and drain regions in said semiconductor layer by selectively introducing a dopant impurity, wherein at least one of said source and drain regions includes a portion at which crystals growing from said two portions meet with each other.
Claim 9
Dependent Claim
17 words
A method according to claim 1, 2 3, or 4 wherein said semiconductor layer comprises amorphous silicon.
Claim 10
Dependent Claim
20 words
A method according to claim 1, 2, 3, or 4 wherein said metal containing crystallization promoting material comprises metal silicide.
Claim 11
Dependent Claim
28 words
A method according to claim 1, 2, or 4 wherein said semiconductor layer after the crystallization step contains hydrogen at a concentration from 0.01 to 5 atom %.
Claim 12
Dependent Claim
25 words
A method according to claim 1, 2, 3, or 4 wherein said metal is selected from the group consisting of Ni, Pt, Fe and Co.
Claim 13
Dependent Claim
24 words
A method according to claim 1, 2, or 4 further comprising a step of patterning the semiconductor layer prior to the step of crystallizing.
Claim 14
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one first portion of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material wherein crystallization proceeds through said semiconductor layer from said first portion and terminates at a second portion of the semiconductor layer; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes said second portion of the semiconductor layer.
Claim 15
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one first portion of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material wherein crystallization proceeds through said semiconductor layer from said first portion and terminates at a second portion of the semiconductor layer; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes said second portion of the semiconductor layer.
Claim 16
Independent Claim
82 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one portion of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes said one portion of the semiconductor layer.
Claim 17
Independent Claim
82 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least one portion of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes said one portion of the semiconductor layer.
Claim 18
Independent Claim
62 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes a portion where a metal containing crystallization promoting material has been directly applied thereto.
Claim 19
Independent Claim
62 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes a portion where a metal containing crystallization promoting material has been directly applied thereto.
Claim 20
Independent Claim
89 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least two portions of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes a portion at which crystals growing from said two portions meet with each other.
Claim 21
Independent Claim
89 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer on an insulating surface; selectively applying a metal containing crystallization promoting material to at least two portions of said semiconductor layer; crystallizing the semiconductor layer by using said crystallization promoting material; selectively introducing a dopant impurity into the semiconductor layer to form at least one impurity doped region having an N-type or P-type conductivity, wherein said impurity doped region includes a portion at which crystals growing from said two portions meet with each other.
Claim 22
Dependent Claim
17 words
A method according to claim 10, 11, 12, or 13 wherein said semiconductor layer comprises amorphous silicon.
Claim 23
Dependent Claim
20 words
A method according to claim 10, 11, 12, or 13 wherein said metal containing crystallization promoting material comprises metal silicide.
Claim 24
Dependent Claim
28 words
A method according to claim 10, 11, or 13 wherein said semiconductor layer after the crystallization step contains hydrogen at a concentration from 0.01 to 5 atom %.
Claim 25
Dependent Claim
25 words
A method according to claim 10, 11, 12, or 13 wherein said metal is selected from the group consisting of Ni, Pt, Fe and Co.
Claim 26
Dependent Claim
25 words
A method according to claim 10, 11, 12, or 13 further comprising a step of patterning the semiconductor layer prior to the step of crystallizing.
Claim 27
Dependent Claim
41 words
A method according to claim 3, further comprising a step of crystallizing the semiconductor layer after forming the source and drain regions, wherein said semiconductor layer after the crystallization step contains hydrogen at a concentration from 0.01 to 5 atom %.
Claim 28
Dependent Claim
21 words
A method according to claim 19 further comprising a step of patterning the semiconductor layer prior to the step of crystallizing.
Claim 29
Dependent Claim
41 words
A method according to claim 12, further comprising a step of crystallizing the semiconductor layer after forming the source and drain regions, wherein said semiconductor layer after the crystallization step contains hydrogen at a concentration from 0.01 to 5 atom %.
Claim 30
Dependent Claim
21 words
A method according to claim 21 further comprising a step of patterning the semiconductor layer prior to the step of crystallizing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |