Thin film formation method for ferroelectric materials

Claim 2

In a thin film formation method wherein a dielectric thin film consisting of many elements is formed by depositing first- and second-layer thin films as lower and upper layers on an underlayer, and crystallizing at least one of said thin films to form said dielectric thin film, the improvement wherein said first-layer thin film closer to said under layer is deposited as composition having at least one constituent element of said thin film in stoichiometric excess amount, and said second-layer thin film is formed on said first-layer thin film, in stoichiometric composition ratio.

Claim 3

In a method according to claim 1, the improvement further comprising performing said crystallization by annealing after depositing said first-layer thin film.

Claim 4

In a method according to claim 1, the improvement further comprising performing said crystallization by annealing after depositing said second-layer thin film.

Claim 5

In a method according to claim 1, the improvement further comprising performing said crystallization by annealing during depositing said first-layer thin film.

Claim 6

In a method according to claim 1, the improvement further comprising performing said crystallization by annealing during depositing said second-layer thin film.

Claim 7

In a method according to claim 1, the improvement wherein at least one of said first- and second-layer thin films is formed by sputtering.

Claim 8

In a thin film formation method comprising a first layer thin film deposition step, a first-layer thin film crystallization step, and a second-layer thin film deposition step, wherein the first-layer thin film deposition step comprises supplying raw material particles serving as film formation nuclei onto an underlayer, and growing said raw material particles to form said first-layer thin film, and said crystallization step comprises crystallizing said first-layer thin film by annealing, the improvement wherein a constituent element of the raw material particles supplied in the first-layer thin film deposition step is supplied in stoichiometric excess amount, and the second-layer thin film deposition step comprises forming said second-layer thin film on said first-layer thin film by using particles of said raw material supplied in stoichiometric excess in the first-layer thin film deposition step as film formation nuclei, while heating said underlayer and said crystallized first-layer thin film.

Claim 9

In a thin film formation method comprising a first layer thin film deposition step, a first-layer thin film crystallization step, and a second-layer thin film deposition step, wherein the first-layer thin film deposition step comprises supplying raw material particles serving as film formation nuclei onto an underlayer, and growing said raw material particles to form said first-layer thin film, and said crystallization step comprises crystallizing said first-layer thin film by annealing, the improvement wherein a constituent element of the raw material particles supplied in the first-layer thin film deposition step is supplied in stoichiometric excess amount, and the second-layer thin film deposition step comprises forming said second-layer thin film on said first-layer thin film by using particles of said raw material supplied in stoichiometric excess in the first-layer thin film deposition step as film formation nuclei, while heating said underlayer and said crystallized first-layer thin film.

Claim 10

In a method according to claim 7, the improvement wherein said annealing in the crystallization step performed after depositing said first-layer thin film is performed at a temperature which is higher than the film deposition temperature of said first- or second-layer thin film.

Claim 11

In a method according to claim 7, the improvement wherein said dielectric thin film is constituted by an SrBi 2 Ta 2 O 9 film, and said constituent element in said first-layer thin film in stoichiometric excess is Bi.

Claim 12

In a method according to claim 7, the improvement wherein said first-layer thin film is deposited using a gas mixture of argon and oxygen as a plasma reaction gas, and said second-layer thin film is sputter-deposited using only argon as a plasma reaction gas.

Claim 13

In a method according to claim 7, the improvement wherein said second-layer thin film is deposited at a deposition temperature which is higher than the deposition temperature of said first layer thin film.

Claim 14

In a method according to claim 7, the improvement wherein said first-layer thin film is deposited using a gas mixture of argon and oxygen as a plasma reaction gas, and said second-layer thin film is deposited using the gas mixture of argon and oxygen as a plasma reaction gas at a deposition temperature which is higher than the deposition temperature of said first-layer thin film.

Claim 15

In a method according to claim 7, the improvement wherein said first-layer thin film is deposited using a gas mixture of argon and oxygen as a plasma reaction gas, and said second-layer thin film is sputter-deposited using only argon as a plasma reaction gas.

Claim 16

In a method according to claim 7, the improvement wherein said second-layer thin film is deposited at a deposition temperature which is higher than the deposition temperature of said first-layer thin film.

Claim 17

In a method according to claim 7, the improvement wherein said first-layer thin film is deposited using a gas mixture of argon and oxygen as a plasma reaction gas, and said second layer thin film is deposited using the gas mixture of argon and oxygen as a plasma reaction gas at a deposition temperature which is higher than the deposition temperature of said first-layer thin film.