EP0495994A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device and its manufacturing method
Assignee: Seiko Epson Corp
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Filing: 1991-08-06
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Granted: —
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Expires: 2011-08-06
Abstract
Abstract In a semiconductor device having a capacitive element whose substrate is a ferroelectric film. A ferroelectric film (103) is formed by a sputtering method and a ferroelectric film (104) is formed by a method of spin-coating of a solution. The thicknesses of the films are not extremely small at the edges of steps, and consequently the qualities of the films are good.
Inventors
- 👤 Akira Fujisawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:09
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
66 words
A semiconductor device which is characterized in that a thin film intended to form a ferroelectric layer of the semiconductor device which has formed therein a capacitor element having the ferroelectric layer as a basic layer, comprises at least: a thin film formed by a sputtering method, and a thin film formed by a spin coating of a solution which includes components for forming a ferroelectricity.
Claim 2
Dependent Claim
79 words
A process for forming a thin film intended to form a ferroelectric layer on a semiconductor device substrate of a semiconductor device which has formed therein a capacitor element having the ferroelectric layer as a basic layer, which is characterized in comprising the following steps of: forming the thin film intended to form the ferroelectric layer by a sputtering method, and forming a thin film by a spin coating of a solution which includes components for forming the ferroelectricity.
References Cited (Backward Citations)
No citation records indexed.
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