Insulated gate field effect semiconductor devices

Claim 2

A semiconductor device comprising: a semiconductor layer formed on an insulating surface of a substrate and including a pair of impurity regions having a first conductivity type and a channel semiconductor layer extending therebetween having a second conductivity type; a gate insulating layer adjacent to said channel semiconductor layer; a gate electrode located adjacent to said channel semiconductor layer with said gate insulating layer interposed therebetween, wherein at least one of said pair of impurity regions comprises a first impurity region contiguous to said channel semiconductor layer and a second impurity region distant from said channel semiconductor layer, and said first impurity region contains a dopant impurity for giving said first conductivity type thereto at a lower concentration than said second impurity region, and wherein said channel semiconductor layer extends beyond a side edge of said gate electrode to form at least one offset region contiguous to said first region.

Claim 3

The device of claim 1 further comprising a pixel electrode connected to said one of said pair of impurity regions.

Claim 4

The device of claim 1 wherein said semiconductor device is a p-channel transistor.

Claim 5

The device of claim 3 wherein said first region contains said dopant impurity at a concentration 1×10 17 to 5×10 18 atoms/cm 3 .

Claim 6

The device of claim 3 wherein said second region contains said dopant impurity at a concentration 1×10 20 to 5×10 21 atoms/cm 3 .

Claim 7

The device of claim 1 wherein said one of the impurity regions is a drain region.

Claim 8

The device of claim 1 wherein both of said pair of impurity regions comprise said first and second impurity regions and each boundary between said channel region and said first region of the pair of impurity regions is outwardly offset from the side edge of the gate electrode.

Claim 9

The device of claim 1 wherein said first region contains said dopant impurity at a concentration 1×10 17 to 5×10 18 atoms/cm 3 .

Claim 10

The device of claim 1 wherein said second region contains said dopant impurity at a concentration 1×10 20 to 5×10 21 atoms/cm 3 .

Claim 11

A semiconductor device comprising: a semiconductor layer formed on an insulating surface of a substrate and including a pair of impurity regions having a first conductivity type and a channel semiconductor layer extending therebetween having a second conductivity type; a gate insulating layer formed on said channel semiconductor layer; a gate electrode comprising an anodizable material and formed over said channel semiconductor layer with said gate insulating layer interposed therebetween; an anodic oxide layer formed on at least side surfaces of said gate electrode, wherein at least one of said pair of impurity regions comprises a first region contiguous to said channel semiconductor layer and a second region distant from said channel semiconductor layer, and said first region is located below said anodic oxide layer which is formed on the side surfaces of the gate electrode and contains a dopant impurity for giving said first conductivity type thereto at a lower concentration than said second region, wherein both of said pair of impurity regions comprise said first and second regions and each boundary between said channel region and said first region of the pair of impurity regions is outwardly offset from the side edge of the gate electrode.

Claim 12

A semiconductor device comprising: a semiconductor layer formed on an insulating surface of a substrate and including a pair of impurity regions having a first conductivity type and a channel semiconductor layer extending therebetween having a second conductivity type; a gate insulating layer formed on said channel semiconductor layer; a gate electrode comprising an anodizable material and formed over said channel semiconductor layer with said gate insulating layer interposed therebetween; an anodic oxide layer formed on at least side surfaces of said gate electrode, wherein at least one of said pair of impurity regions comprises a first region contiguous to said channel semiconductor layer and a second region distant from said channel semiconductor layer, and said first region is located below said anodic oxide layer which is formed on the side surfaces of the gate electrode and contains a dopant impurity for giving said first conductivity type thereto at a lower concentration than said second region, wherein both of said pair of impurity regions comprise said first and second regions and each boundary between said channel region and said first region of the pair of impurity regions is outwardly offset from the side edge of the gate electrode.

Claim 13

The device of claim 10 further comprising a pixel electrode connected to one of said pair of impurity regions.

Claim 14

The device of claim 10 wherein said semiconductor device is a p-channel transistor.

Claim 15

The device of claim 10 wherein said one of the impurity regions is a drain region.

Claim 16

The device of claim 10 wherein said semiconductor device is an n-channel transistor.

Claim 17

A semiconductor device according to claim 10 wherein said anodic oxide layer is further formed on a top surface of said gate electrode.

Claim 18

A semiconductor device comprising: a semiconductor layer formed on an insulating surface of a substrate and including a pair of impurity regions having a first conductivity type and a channel semiconductor layer extending therebetween having a second conductivity type; a gate insulating layer formed on said channel semiconductor layer; and a gate electrode formed over said channel semiconductor layer with said gate insulating layer interposed therebetween, said gate electrode comprising an anodizable material; and an anodic oxide layer formed on at least side surfaces of said gate electrode, wherein at least one of said pair of impurity regions comprises a first region contiguous to said channel semiconductor layer and a second region distant from said channel semiconductor layer, and said first region is located below said anodic oxide layer which is formed on the side surfaces of the gate electrode and contains a dopant impurity for said first conductivity type at a lower concentration than said second region, and wherein a boundary between said channel semiconductor layer and said first region is outwardly offset from a side edge of said gate electrode, and said first region has a width from 0.03 to 0.2 micrometers.

Claim 19

A semiconductor device comprising: a semiconductor layer formed on an insulating surface of a substrate and including a pair of impurity regions having a first conductivity type and a channel semiconductor layer extending therebetween having a second conductivity type; a gate insulating layer formed on said channel semiconductor layer; and a gate electrode formed over said channel semiconductor layer with said gate insulating layer interposed therebetween, said gate electrode comprising an anodizable material; and an anodic oxide layer formed on at least side surfaces of said gate electrode, wherein at least one of said pair of impurity regions comprises a first region contiguous to said channel semiconductor layer and a second region distant from said channel semiconductor layer, and said first region is located below said anodic oxide layer which is formed on the side surfaces of the gate electrode and contains a dopant impurity for said first conductivity type at a lower concentration than said second region, and wherein a boundary between said channel semiconductor layer and said first region is outwardly offset from a side edge of said gate electrode, and said first region has a width from 0.03 to 0.2 micrometers.

Claim 20

The device of claim 16 wherein said boundary between said channel semiconductor layer and said first region is outwardly offset from the side edge of said gate electrode by 0.1 to 0.2 micrometers.

Claim 21

The device of claim 16 further comprising a pixel electrode connected to said one of said pair of impurity regions.

Claim 22

The device of claim 16 wherein said semiconductor device is a p-channel transistor.

Claim 23

The device of claim 16 wherein said one of the impurity regions is drain region.

Claim 24

The device of claim 16 wherein both of said pair of impurity regions comprise said first and second regions and each boundary between said channel region and said first region of the pair of impurity regions is outwardly offset from the side edge of the gate electrode.

Claim 25

The device of claim 1 wherein said semiconductor device is an n-channel transistor.

Claim 26

The device of claim 16 wherein said semiconductor device is an n-channel transistor.

Claim 27

The device of claim 16 wherein said first region contains said dopant impurity at a concentration 1×10 17 to 5×10 18 atoms/cm 3 .

Claim 28

The device of claim 16 wherein said second region contains said dopant impurity at a concentration 1×10 20 to 5×10 21 atoms/cm 3 .

Claim 29

A semiconductor device according to claim 16 wherein said anodic oxide layer is further formed on a top surface of said gate electrode.

Claim 30

A semiconductor device comprising: a substrate having an insulating surface; a semiconductor layer comprising silicon formed on said insulating surface; a channel region having a first conductivity type formed in said semiconductor layer; a pair of source and drain regions having a second conductivity type in said semiconductor layer, with said channel region interposed therebetween; and a gate electrode adjacent to said channel region, wherein said semiconductor layer further includes (a) an offset region, which is an extension of said channel region beyond side edges of said gate electrode and has a same conductivity type as said channel region, and (b) an LDD region between said offset region and at least said drain region, said LDD region having a same conductivity type as said drain region.

Claim 31

A semiconductor device comprising: a substrate having an insulating surface; a semiconductor layer comprising silicon formed on said insulating surface; a channel region having a first conductivity type formed in said semiconductor layer; a pair of source and drain regions having a second conductivity type in said semiconductor layer, with said channel region interposed therebetween; and a gate electrode adjacent to said channel region, wherein said semiconductor layer further includes (a) an offset region, which is an extension of said channel region beyond side edges of said gate electrode and has a same conductivity type as said channel region, and (b) an LDD region between said offset region and at least said drain region, said LDD region having a same conductivity type as said drain region.

Claim 32

The semiconductor device of claim 27 wherein said LDD region has an amorphous structure and said drain region has a crystalline structure.

Claim 33

The semiconductor device of claim 27 wherein said drain region contains a dopant impurity for giving said second conductivity type at a larger concentration than said LDD region.

Claim 34

A semiconductor device comprising: a substrate having an insulating surface; a semiconductor layer comprising silicon formed on said insulating surface; a channel region having a first conductivity type formed in said semiconductor layer; a pair of source and drain regions having a second conductivity type in said semiconductor layer, with said channel region interposed therebetween; and a gate electrode adjacent to said channel region, wherein said semiconductor layer further includes (a) an offset region, which is an extension of said channel region beyond side edges of said gate electrode and has a same conductivity type as said channel region, and (b) a high resistance region between said offset region and at least said drain region, said high resistance region having a same conductivity type as said drain region and having a higher resistance than said drain region.

Claim 35

A semiconductor device comprising: a substrate having an insulating surface; a semiconductor layer comprising silicon formed on said insulating surface; a channel region having a first conductivity type formed in said semiconductor layer; a pair of source and drain regions having a second conductivity type in said semiconductor layer, with said channel region interposed therebetween; and a gate electrode adjacent to said channel region, wherein said semiconductor layer further includes (a) an offset region, which is an extension of said channel region beyond side edges of said gate electrode and has a same conductivity type as said channel region, and (b) a high resistance region between said offset region and at least said drain region, said high resistance region having a same conductivity type as said drain region and having a higher resistance than said drain region.

Claim 36

The semiconductor device of claim 30 wherein said high resistance region has an amorphous structure and said drain region has a crystalline structure.

Claim 37

The semiconductor device of claim 30 wherein said drain region contains a dopant impurity for giving said second conductivity type at a larger concentration than said high resistance region.

Claim 38

A semiconductor device comprising: a substrate having an insulating surface: a semiconductor layer including at least a channel region and source and drain regions with said channel region interposed therebetween; a gate electrode located over said channel region with a gate insulating film interposed therebetween; an anodic oxide film formed on at least side surfaces of said gate electrode; and a pair of LDD regions located between said channel region and said drain region and said channel region and said source region, wherein said pair of LDD regions are located below said anodic oxide film which is formed on said side surface of said gate electrode, and wherein each boundary between said LDD regions and said channel region is outwardly offset from the side surfaces of the gate electrode.

Claim 39

A semiconductor device comprising: a substrate having an insulating surface: a semiconductor layer including at least a channel region and source and drain regions with said channel region interposed therebetween; a gate electrode located over said channel region with a gate insulating film interposed therebetween; an anodic oxide film formed on at least side surfaces of said gate electrode; and a pair of LDD regions located between said channel region and said drain region and said channel region and said source region, wherein said pair of LDD regions are located below said anodic oxide film which is formed on said side surface of said gate electrode, and wherein each boundary between said LDD regions and said channel region is outwardly offset from the side surfaces of the gate electrode.

Claim 40

A device according to claim 33 wherein said LDD regions have a same conductivity type as said source and drain regions and a concentration of a dopant impurity for giving said conductivity in said LDD regions is smaller than that in said source and drain regions.

Claim 41

A device according to claim 33 wherein said LDD regions have a lower crystallinity than said source and drain regions.