Patent US5949093A successfully refreshed from Google Patents.
US5949093A
Expired / Lapsed
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Semiconductor light emitting device with current blocking region
Assignee: Sony Corp
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Filing: 1997-11-12
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Granted: 1999-09-07
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Expires: 2017-11-12
Abstract
Abstract A semiconductor light emitting device comprises: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on the II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on the contact layer; and a second-conduction-type-side electrode formed on a bottom surface of the semiconductor substrate, at least a portion of the contact layer underlying the second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between the second first-conduction-type-side electrode and the second-conduction-type-side electrode, and the high-resistance region behaving as a current blocking region.
Inventors
- 👤 Koshi Tamamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H10H20/81; H10H20/816; H10H20/8162; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
98 words
A semiconductor light emitting device comprising: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on said II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on said contact layer; and a second-conduction-type-side electrode formed on a bottom surface of said semiconductor substrate, at least a portion of said contact layer underlying said second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between said second-first-conduction-type-side electrode and said second-conduction-type-side electrode, and said high-resistance region behaving as a current blocking region.
Claim 2
Dependent Claim
98 words
A semiconductor light emitting device comprising: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on said II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on said contact layer; and a second-conduction-type-side electrode formed on a bottom surface of said semiconductor substrate, at least a portion of said contact layer underlying said second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between said second-first-conduction-type-side electrode and said second-conduction-type-side electrode, and said high-resistance region behaving as a current blocking region.
Claim 3
Dependent Claim
105 words
A semiconductor light emitting device comprising: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a first-conduction-type contact layer formed on said II-VI compound semiconductor layers and containing Te; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on said first-conduction-type contact layer; and a second-conduction-type-side electrode formed on a bottom surface of said semiconductor substrate, at least a portion of said first-conduction-type contact layer underlying said second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between said second first-conduction-type-side electrode and said second-conduction-type-side electrode, and said high-resistance region behaving as a current blocking region.
Claim 4
Dependent Claim
105 words
A semiconductor light emitting device comprising: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a first-conduction-type contact layer formed on said II-VI compound semiconductor layers and containing Te; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on said first-conduction-type contact layer; and a second-conduction-type-side electrode formed on a bottom surface of said semiconductor substrate, at least a portion of said first-conduction-type contact layer underlying said second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between said second first-conduction-type-side electrode and said second-conduction-type-side electrode, and said high-resistance region behaving as a current blocking region.
Claim 5
Dependent Claim
51 words
The semiconductor light emitting device according to claim 2, further comprising: at least one first-conduction-type II-VI compound semiconductor layer underlying said first-conduction-type contact layer and not containing Te; and said current blocking region formed in said first-conduction-type contact layer and said first-conduction-type II-VI compound semiconductor layer underlying said second first-conduction-type-side electrode.
Claim 6
Dependent Claim
22 words
The semiconductor light emitting device according to claim 2 wherein said first-conduction-type contact layer is made of ZnTe, ZnSTe, ZnSeTe, or BeTe.
Claim 7
Dependent Claim
45 words
The semiconductor light emitting device according to claim 2 further including a first-conduction-type ZnSe/ZnTe multiquantum well layer underlying said first-conduction-type contact layer, said current blocking region being formed in said first-conduction-type contact layer and said first-conduction-type ZnSe/ZnTe multiquantum well layer underlying said second first-conduction-type-side electrode.
Claim 8
Dependent Claim
27 words
The semiconductor light emitting device according to claim 2 wherein said first first-conduction-type-side electrode and said second first-conduction-type-side electrode are made of the same metal or metals.
Claim 9
Dependent Claim
34 words
The semiconductor light emitting device according to claim 2 wherein said second first-conduction-type-side electrode has better characteristics than those of said first first-conduction-type-side electrode in terms of ohmic contact with said first-conduction-type contact layer.
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