US5544190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
II-VI Semiconductor diode laser with lateral current confinement
Assignee: Philips North America LLC
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Filing: 1994-11-17
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Granted: 1996-08-06
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Expires: 2014-11-17
Abstract
Abstract A II-VI semiconductor diode laser has a II-VI semiconductor structure disposed atop a semiconductor substrate and covered with a contact layer. A current-blocking layer is disposed on top of this contact layer. The current-blocking layer has an etched groove extending therethrough, to expose a stripe of the contact layer. A metal electrode layer contacts the current-blocking layer and extends into the etched groove to contact the exposed stripe of the contact layer. The current-blocking layer confines the current flow between the metal electrode layer and the contact layer to the stripe of the contact layer exposed by the etched groove.
Inventors
- 👤 Piotr M. Mensz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:39
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H01S5/20; H01S5/22; H01S5/2205; H01S5/2211; H01S5/223; H01S5/2231
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
152 words
A II-VI semiconductor diode laser comprising: a substrate of semiconductor material of a first conductivity type; a II-VI semiconductor layer structure disposed atop said substrate, said II-VI semiconductor layer structure including: an active layer; and a first cladding layer of a second conductivity type, opposite to that of the first conductivity type, disposed atop the active layer; a contact layer of II-VI semiconductor material of said second conductivity type disposed atop an entire surface of the II-VI semiconductor layer structure; a current-blocking layer of II-VI semiconductor material disposed atop said contact layer, said current-blocking layer having a groove etched therethrough to expose a stripe of said contact layer; and a metal electrode layer contacting said current-blocking layer and extending into said groove to contact the stripe of said contact layer, said current-blocking layer confining current flow between the metal electrode layer and the contact layer to said stripe of said contact layer.
Claim 2
Dependent Claim
152 words
A II-VI semiconductor diode laser comprising: a substrate of semiconductor material of a first conductivity type; a II-VI semiconductor layer structure disposed atop said substrate, said II-VI semiconductor layer structure including: an active layer; and a first cladding layer of a second conductivity type, opposite to that of the first conductivity type, disposed atop the active layer; a contact layer of II-VI semiconductor material of said second conductivity type disposed atop an entire surface of the II-VI semiconductor layer structure; a current-blocking layer of II-VI semiconductor material disposed atop said contact layer, said current-blocking layer having a groove etched therethrough to expose a stripe of said contact layer; and a metal electrode layer contacting said current-blocking layer and extending into said groove to contact the stripe of said contact layer, said current-blocking layer confining current flow between the metal electrode layer and the contact layer to said stripe of said contact layer.
Claim 3
Dependent Claim
23 words
A semiconductor diode laser as claimed in claim 1, wherein said first conductivity type is n-type, and said second conductivity type is p-type.
Claim 4
Dependent Claim
24 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said first conductivity type is p-type, and said second conductivity type is n-type.
Claim 5
Dependent Claim
27 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said etched groove extends into the contact layer and has a flat bottom and curved edges.
Claim 6
Dependent Claim
33 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein the current-blocking layer is of the first conductivity type, said first conductivity type being n-type and said second conductivity type being p-type.
Claim 7
Dependent Claim
33 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein the current-blocking layer is of the first conductivity type, said first conductivity type being p-type and said second conductivity type being n-type.
Claim 8
Dependent Claim
80 words
A II-VI semiconductor laser as claimed in claim 1, wherein said II-VI semiconductor layer structure further comprises: a second cladding layer of the first conductivity type disposed on the side of the active layer opposite said first cladding layer; a first wave guiding layer of the second conductivity type disposed between the active layer and the first cladding layer; and a second wave guiding layer of the first conductivity type disposed between the active layer and the second cladding layer.
Claim 9
Dependent Claim
53 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said substrate is of III-V semiconductor material of the first conductivity type, and said II-VI semiconductor layer structure further comprises a second cladding layer of the first conductivity type disposed on the side of the active layer opposite said first cladding layer.
Claim 10
Dependent Claim
59 words
A II-VI semiconductor diode laser as claimed in claim 8, wherein said II-VI semiconductor layer structure further comprises: a first wave guiding layer of the second conductivity type disposed between the active layer and the first cladding layer; and a second wave guiding layer of the first conductivity type disposed between the active layer and the second cladding layer.
Claim 11
Dependent Claim
50 words
A II-VI semiconductor diode laser as claimed in claim 9, wherein said substrate comprises GaAs, said first and said second cladding layers comprise ZnMgSSe, said first and said second wave guiding layers comprise ZnSSe, said active layer comprises ZnCdSe, and said contact layer and said current blocking layer comprise ZnSe.
Claim 12
Dependent Claim
37 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said substrate comprises ZnSe, said first cladding layer comprises ZnSe, said active layer comprises ZnCdSe, and said contact layer and said current blocking layer comprise ZnSe.
Claim 13
Dependent Claim
17 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said metal electrode layer comprises Au.
Claim 14
Dependent Claim
16 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said current-blocking layer comprises ZnSe.
Claim 15
Dependent Claim
16 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said current-blocking layer comprises ZnSSe.
Claim 16
Dependent Claim
16 words
A II-VI semiconductor diode laser as claimed in claim 1, wherein said current-blocking layer comprises ZnMgSSe.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-06 | 2004-02-05 | 2004-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-06 | 2008-02-05 | 2008-08-06 | $7700.00 | Window Closed / Lapsed |