Semiconductor laser

Claim 2

In a semiconductor laser composed of a sequence of semiconductor layers forming a heterostructure diode including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of said active zone, a monocrystalline outer layer which, in the layer sequence, is spaced from one of said differently doped semiconductor layers by an additional intermediate layer, a trough-shaped recess formed in the outer major surface of said monocrystalline outer layer and extending essentially perpendicularly to said radiation exit face, and means disposed adjacent said recess for constricting the current flowing in the forward direction of the diode to a narrow, strip-shaped region in said laser active zone; the improvement wherein: said recess extends through said monocrystalline outer layer so that the bottom of the recess is formed by said additional intermediate semiconductor layer; an electrically conductive contact is disposed on at least said bottom of said recess; said additional intermediate layer is formed of GaAs which at least at the location of said contact is of p+ type conductivity; and said contact is selected from the group consisting of a Ti-Pt-Au contact, a Zn-Au contact and a Cr-Au contact.

Claim 3

A semiconductor laser as defined in claim 1 wherein said means for constricting comprises: a doped region extending from said outer surface provided with said recess toward but not into said active zone and formed by diffusion from said outer surface of a doping material which gives said doped region the same conductivity type as said one of said differently doped layers, said doped region being delimited by a diffusion front substantially parallel, and corressponding in contour, to said surface provided with said recess, and said diffusion front being located for providing a localized semiconductor region of a single conductivity type in the area below said recess and between said recess and said active zone, and semiconductive regions of the respectively opposite conductivity type separated by said diffusion front in areas adjacent the localized region.

Claim 4

A semiconductor laser as defined in claim 1 wherein said contact is a metal contact.

Claim 5

In a semiconductor laser composed of a sequence of semiconductor layers forming a heterostructure diode including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of said active zone, a monocrystalline outer layer which, in the layer sequence, is spaced from one of said differently doped semiconductor layers by an additional intermediate layer, a trough-shaped recess formed in the outer major surface of said monocrystalline outer layer and extending essentially perpendicularly to said radiation exit face, and means disposed adjacent said recess for constricting the current flowing in the forward direction of the diode to a narrow, strip-shaped region in said laser active zone; the improvement wherein said recess extends through said monocrystalline outer layer so that the bottom of the recess is formed by said additional intermediate semiconductor layer; and wherein an electrically conductive contact is disposed on at least said bottom of said recess; and said additional intermediate semiconductor layer is formed of GaInAsP which at least at the location of said contact is essentially of p+ type conductivity and said contact is selected from the group consisting of a Ti-Pt-Au contact, a Zn-Au contact, and a Cr-Au contact.

Claim 6

In a semiconductor laser composed of a sequence of semiconductor layers forming a heterostructure diode including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of said active zone, a monocrystalline outer layer which, in the layer sequence, is spaced from one of said differently doped semiconductor layers by an additional intermediate layer, a trough-shaped recess formed in the outer major surface of said monocrystalline outer layer and extending essentially perpendicularly to said radiation exit face, and means disposed adjacent said recess for constricting the current flowing in the forward direction of the diode to a narrow, strip-shaped region in said laser active zone; the improvement wherein said recess extends through said monocrystalline outer layer so that the bottom of the recess is formed by said additional intermediate semiconductor layer; and wherein an electrically conductive contact is disposed on at least said bottom of said recess; and said additional intermediate semiconductor layer is formed of GaInAsP which at least at the location of said contact is essentially of p+ type conductivity and said contact is selected from the group consisting of a Ti-Pt-Au contact, a Zn-Au contact, and a Cr-Au contact.

Claim 7

A semiconductor laser as defined in claim 4 wherein the p + type conductivity of the GaInAsP layer is produced by the presence of Zn Atoms resulting from a Zn diffusion.

Claim 8

A semiconductor laser as defined in claim 1 wherein said trough-shaped recess has an essentially trapezoidal cross-section when seen perpendicularly to the direction of said recess, and said bottom of said recess is essentially formed by the surface of said additional semiconductor layer in the plane of its interface with said monocrystalline outer layer.

Claim 9

A semiconductor laser as defined in claim 6 wherein said recess is formed by selective etching.

Claim 10

A semiconductor laser as defined in claim 1 wherein the electrical series resistance of said semiconductor laser is less than 5 ohm.

Claim 11

A semiconductor laser as defined in claim 1 wherein at least one side face of said trough-shaped recess is formed essentially as a crystal plane of said monocrystalline outer layer.

Claim 12

A semiconductor laser as defined in claim 4 wherein: said monocrystalline semiconductor outer layer is formed essentially of InP; and said recess has at least one side face which is essentially a (111) A-crystal plane of said outer layer.

Claim 13

A semiconductor laser as defined in claim 9 wherein: said monocrystalline semiconductor outer layer is formed essentially of GaAlAs; and said recess has at least one side face which is essentially a (111) A-crystal plane.

Claim 14

A semiconductor laser as defined in claim 1 wherein said p+ type conductivity of said GaAs layer is produced by the presence of Zn atoms resulting from an In diffusion.

Claim 15

A semiconductor laser as defined in claim 4 wherein said means for constricting comprises: a doped region extending from said outer surface provided with said recess toward but not into said active zone and formed by diffusion from said outer surface of a doping material which gives said doped region the same conductivity type as said one of said differently doped layers, said doped region being delimited by a diffusion front substantially parallel, and corresponding in contour, to said surface provided with said recess, and said diffusion front being located for providing a localized semiconductor region of a single conductivity type in the area below said recess and between said recess and said active zone, and semiconductive regions of the respectively opposite conductivity type separated by said diffusion front in areas adjacent the localized region.

Claim 16

A semiconductor laser composed of a sequence of semiconductor layers forming a heterostructure diode comprising: a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers; two respectively opposite conductivity type semiconductor layers disposed on respectively opposite surfaces of said layer defining said active zone; a monocrystalline outer layer which, in the layer sequence, is spaced from one of said respectively opposite conductivity type layers by an additional intermediate layer which is of the same conductivity type as said outer layer and of the opposite conductivity type as said one of said two respectively opposite conductivity type layers; a trough-shaped recess formed in the outer major surface of said outer layer, said recess extending essentially perpendicularly to said radiation face and through said outer layer so that the bottom of said recess is formed by said additional intermediate layer; means disposed adjacent said recess for constricting the current flowing in the forward direction of the diode to a narrow strip shaped region in said laser active zone, said means including a highly conductive diffused surface region, of a conductivity type opposite that of said outer layer, extending along the side surfaces and said bottom of said recess, and through said additional intermediate layer into said one of said respectively opposite conductivity type layers; and an electrically conductive contact disposed on at least the portion of said diffused region extending along said bottom of said recess.

Claim 17

A semiconductor laser composed of a sequence of semiconductor layers forming a heterostructure diode comprising: a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers; two respectively opposite conductivity type semiconductor layers disposed on respectively opposite surfaces of said layer defining said active zone; a monocrystalline outer layer which, in the layer sequence, is spaced from one of said respectively opposite conductivity type layers by an additional intermediate layer which is of the same conductivity type as said outer layer and of the opposite conductivity type as said one of said two respectively opposite conductivity type layers; a trough-shaped recess formed in the outer major surface of said outer layer, said recess extending essentially perpendicularly to said radiation face and through said outer layer so that the bottom of said recess is formed by said additional intermediate layer; means disposed adjacent said recess for constricting the current flowing in the forward direction of the diode to a narrow strip shaped region in said laser active zone, said means including a highly conductive diffused surface region, of a conductivity type opposite that of said outer layer, extending along the side surfaces and said bottom of said recess, and through said additional intermediate layer into said one of said respectively opposite conductivity type layers; and an electrically conductive contact disposed on at least the portion of said diffused region extending along said bottom of said recess.

Claim 18

A semiconductor laser as defined in claim 14 wherein said additional intermediate semiconductor layer is formed of GaAs.

Claim 19

A semiconductor laser as defined in claim 15 wherein said highly conductive surface regions of p+ type conductivity, and said contact is selected from the group consisting of a Ti-Pt-Au contact, a Zn-Au contact and a Cr-Au contact.

Claim 20

A semiconductor laser as defined in claim 15 wherein: said outer layer, said two respectively opposite conductivity type layers and said layer defining a laser active zone are each formed of GaAlAs; and a semiconductor substrate layer of GaAs of the same conductivity type as the other of said two respectively opposite conductivity type layers is disposed on the outer surface of said other of said two respectively opposite conductivity type layers.

Claim 21

A semiconductor laser as defined in claim 14 wherein said additional intermediate semiconductor layer is formed of GaInAsP.

Claim 22

A semiconductor laser as defined in claim 18 wherein said highly conductive surface regions of p+ type conductivity, and said contact is selected from the group consisting of a Ti-Pt-Au contact, a Zn-Au contact and a Cr-Au contact.

Claim 23

A semiconductor laser as defined in claim 18 wherein: said layer forming said laser active zone is formed of GaInAsP; said outer layer and each of said two respectively opposite conductivity type layers are formed of InP; and a semiconductor substrate layer of InP of the same conductivity type as the other of said two respectively opposite conductivity type layers is disposed on the outer surface of said other of said two respectively opposite conductivity type layers.