US5780873A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device capable of easily forming cavity and its manufacturing method
Assignee: Toshiba Corp
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Filing: 1996-08-13
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Granted: 1998-07-14
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Expires: 2016-08-13
Abstract
Abstract A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.
Inventors
- 👤 Kazuhiko Itaya
- 👤 Masahiro Yamamoto
- 👤 Masaaki Onomura
- 👤 Hidetoshi Fujimoto
- 👤 Genichi Hatakoshi
- 👤 Hideto Sugawara
- 👤 Masayuki Ishikawa
- 👤 John Rennie
- 👤 Shinji Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0215; H01S5/30; H01S5/34; H01S5/343; H01S5/34333; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/0137; H10H20/817; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H01S5/0201; H01S5/0202; H01S5/0208; H01S5/021; H01S5/0213; H01S5/0217; H01S5/0218; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2232; H01S5/32; H01S5/3202; H01S5/323; H01S5/3235; H01S5/32391; H01S5/34326; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4043; H01S5/4087
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
31 words
A semiconductor device comprising: a device section having a semiconductor of a hexagonal type; and a crystal section of a cubic type combined into the device section and to be cleaved.
Claim 2
Dependent Claim
31 words
A semiconductor device comprising: a device section having a semiconductor of a hexagonal type; and a crystal section of a cubic type combined into the device section and to be cleaved.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein said device section is a semiconductor light-emitting device having a compound semiconductor containing nitrogen.
Claim 4
Dependent Claim
61 words
A semiconductor device comprising: a device section having a semiconductor of a hexagonal type; and a crystal section combined into said device section, and said crystal section having a cubic type semiconductor substrate or semiconductor layer such that its 011!-orientation or 011!-orientation is conformed to an orientation determined by an integer notation of the hexagonal type semiconductor constituting said device section.
Claim 5
Dependent Claim
61 words
A semiconductor device comprising: a device section having a semiconductor of a hexagonal type; and a crystal section combined into said device section, and said crystal section having a cubic type semiconductor substrate or semiconductor layer such that its 011!-orientation or 011!-orientation is conformed to an orientation determined by an integer notation of the hexagonal type semiconductor constituting said device section.
Claim 6
Dependent Claim
23 words
The semiconductor device according to claim 3, wherein the orientation determined by the integer notation of the hexagonal type semiconductor is a <1120>-orientation.
Claim 7
Dependent Claim
22 words
The semiconductor device according to claim 3, wherein said device section is a semiconductor light-emitting device having a compound semiconductor containing nitrogen.
Claim 8
Dependent Claim
57 words
A semiconductor light-emitting device comprising: a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into said semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming said semiconductor light-emitting device section.
Claim 9
Dependent Claim
57 words
A semiconductor light-emitting device comprising: a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into said semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming said semiconductor light-emitting device section.
Claim 10
Dependent Claim
31 words
The semiconductor light-emitting device according to claim 6, wherein at least a metallic layer or an oxide layer is formed between said semiconductor light-emitting device section and said conductive semiconductor substrate.
Claim 11
Dependent Claim
34 words
The semiconductor light-emitting device according to claim 7, wherein said semiconductor light-emitting device section comprises a compound semiconductor containing nitrogen, and has a mirror surface induced and cleaved by cleaving said conductive semiconductor substrate.
Claim 12
Dependent Claim
35 words
The semiconductor light-emitting device according to claim 8, wherein a second semiconductor light-emitting device section capable of emitting a red laser beam is formed between said semiconductor light-emitting device section and said conductive semiconductor substrate.
Claim 13
Dependent Claim
24 words
The semiconductor light-emitting device according to claim 6, wherein said semiconductor light-emitting device section and said conductive semiconductor substrate are directly contacted each other.
Claim 14
Dependent Claim
37 words
The semiconductor light-emitting device according to claim 6, wherein an amorphous layer having structural elements for said semiconductor light-emitting section and said conductive semiconductor substrate is formed between said semiconductor light-emitting section and said conductive semiconductor substrate.
Claim 15
Dependent Claim
29 words
The semiconductor light-emitting device according to claim 11, wherein said amorphous layer is formed by directly bonding said semiconductor light-emitting section and said conductive semiconductor substrate to each other.
Claim 16
Dependent Claim
34 words
The semiconductor light-emitting device according to claim 12, wherein said semiconductor light-emitting device section comprises a compound semiconductor containing nitrogen, and has a mirror surface induced and cleaved by cleaving said conductive semiconductor substrate.
Claim 17
Dependent Claim
35 words
The semiconductor light-emitting device according to claim 6, wherein a second semiconductor light-emitting device section capable of emitting a red laser beam is formed between said semiconductor light-emitting device section and said conductive semiconductor substrate.
References Cited (Backward Citations)
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