Patent US5908305A successfully refreshed from Google Patents.
US5908305A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electro-optic device
Assignee: Mellanox Technologies Silicon Photonics Inc
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Filing: 1998-05-22
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Granted: 1999-06-01
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Expires: 2018-05-22
Abstract
Abstract The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide.
Inventors
- 👤 Stephen James Crampton
- 👤 Arnold Peter Roscoe Harpin
- 👤 Andrew George Rickman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:08
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/025; G02F1/0151; G02F1/0152; G02F1/29; G02F1/31; G02F1/313; G02F1/3132; G02F1/3133; G02F1/3137; G02F1/3138; G02F2201/00; G02F2201/06; G02F2201/063; G02F2202/00; G02F2202/10; G02F2202/105
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
92 words
A method of manufacturing an electro-optical device comprising the following steps: selecting a silicon-on-insulator wafer comprising an upper layer of silicon separated from a substrate by an insulating layer; increasing the thickness of the upper silicon layer thereof by epitaxial growth, etching the upper silicon layer to form a rib therein having dimensions large enough to be compatible with fibre optics and forming a lateral doped junction comprising a p-doped region and an n-doped region on opposite sides of the rib so as to form a pin diode across the rib waveguide.
Claim 2
Independent Claim
92 words
A method of manufacturing an electro-optical device comprising the following steps: selecting a silicon-on-insulator wafer comprising an upper layer of silicon separated from a substrate by an insulating layer; increasing the thickness of the upper silicon layer thereof by epitaxial growth, etching the upper silicon layer to form a rib therein having dimensions large enough to be compatible with fibre optics and forming a lateral doped junction comprising a p-doped region and an n-doped region on opposite sides of the rib so as to form a pin diode across the rib waveguide.
Claim 3
Dependent Claim
36 words
A method as claimed in claim 1 in which the lateral junction is formed by forming a p-doped region in one side face of the rib and an n-doped region in the other side face thereof.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 1 in which the doped regions are formed by diffusion of dopant into the side faces of the rib.
Claim 5
Dependent Claim
29 words
A method as claimed in claim 1 in which the doped regions are formed by diffusion of dopant into the upper silicon layer on opposite sides of the rib.
Claim 6
Dependent Claim
26 words
A method as claimed in claim 1 in which the silicon-on-insulator wafer is manufactured by implanting a silicon wafer with oxygen and then annealing the wafer.
Claim 7
Dependent Claim
27 words
A method as claimed in claim 5 in which the silicon-on-insulator wafer is formed with the upper silicon layer having a thickness in the range 0.1-0.2 microns.
Claim 8
Dependent Claim
31 words
A method as claimed in claim 6 in which the thickness of the upper silicon layer is increased by epitaxial growth to a thickness in the range 2 to 8 microns.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 1 in which the insulating layer has a thickness of about 0.4 microns.
Claim 10
Dependent Claim
26 words
A method as claimed in claim 1 in which the rib is formed with a height of at least 4 microns measured from the insulating layer.
Claim 11
Dependent Claim
20 words
A method as claimed in claim 1 in which the rib is formed with a width of approximately 3 microns.
Claim 12
Dependent Claim
65 words
A method as claimed in claim 1 in which the ratio of the rib height, measured from the insulating layer, to the height of etched regions of the upper silicon layer on opposite sides of the rib and the ratio of the rib width to the rib height are selected so that substantially only a fundamental mode of light may be propagated through the device.
Claim 13
Dependent Claim
30 words
A method as claimed in claim 1 in which the p-doped regions and the n-doped regions are doped so as to comprise at least 10 19 atoms/cm 3 of dopant.
Claim 14
Dependent Claim
26 words
A method as claimed in claim 1 in which boron is used to form the p-doped regions and phosphorous is used to form the n-doped regions.
Claim 15
Dependent Claim
21 words
A method as claimed in claim 1 in which the rib is defined by etching a trench on opposite sides thereof.
Claim 16
Dependent Claim
19 words
A method as claimed in claim 14 in which each trench has a width of at least 8.5 microns.
References Cited (Backward Citations)
US4787691A
Cited
US4857973A
Cited
US4877299A
Cited
US4958898A
Cited
US5125065A
Cited
US4997246A
Cited
EP0524213A1
Cited
US5157748A
Cited
US5107538A
Cited
US5367585A
Cited
US5566257A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-31 | 2002-11-30 | 2003-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-31 | 2006-11-30 | 2007-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-31 | 2010-11-30 | 2011-06-01 | $7700.00 | Window Closed / Lapsed |