Electro-optical silicon devices

Claim 2

An electrooptic phase modulator comprising: (a) a silicon substrate; (b) an insulating dielectric layer positioned upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into a waveguide for the transmission of light; (d) a first doped region forming a part of said crystalline silicon layer adjacent to said waveguide; (e) a second doped region forming a part of said crystalline silicon layer adjacent to said waveguide and differently doped than said first doped region; (f) a passivating layer substantially covering said crystalline silicon layer; (g) a first electrical contact connected to said first doped region layer; and (h) a second electrical contact electrically connected to said second doped region wherein connection of said electrical contacts to an electric voltage source affects the phase of light transmitted through said waveguide.

Claim 3

The electroopic phase modulator of claim 1 wherein said first doped region comprises p + material and said second doped region comprises n-typed material.

Claim 4

The electrooptic phase modulator of claim 1 wherein said dielectric layer is interrupted away from the vicinity of said waveguide to permit electric current flow between said substrate and said crystalline silicon layer.

Claim 5

The electrooptic phase modulator of claim 1 wherein said crystalline silicon layer comprises primarily n-type material.

Claim 6

The electrooptic phase modulator of claim 4 wherein said substrate comprises n + type material.

Claim 7

The electrooptic phase modulator of claim 1 wherein the dielectric layer comprises silicon dioxide.

Claim 8

An electrooptic switch comprising: (a) a silicon substrate; (b) a dielectric layer deposited upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into two diverging waveguides having a common area which comprises an n-type region and a p-type region. (d) a passivating layer substantially covering said crystalline silicon layer; (e) a first contact electrically connected to said n-type region of said waveguide common area; and (f) a second contact electrically connected to said p-type region, said first and second electric contacts for providing an electric current through said switch in order to direct light traveling through said waveguide common area.

Claim 9

An electrooptic switch comprising: (a) a silicon substrate; (b) a dielectric layer deposited upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into two diverging waveguides having a common area which comprises an n-type region and a p-type region. (d) a passivating layer substantially covering said crystalline silicon layer; (e) a first contact electrically connected to said n-type region of said waveguide common area; and (f) a second contact electrically connected to said p-type region, said first and second electric contacts for providing an electric current through said switch in order to direct light traveling through said waveguide common area.

Claim 10

The electrooptic switch of claim 7 wherein said crystalline silicon layer comprises an n doped region and a p + doped region at said waveguide common area.

Claim 11

The electrooptic switch of claim 9 wherein said dielectric layer is interrupted at a location removed from said waveguide in order to permit electric current flow between said substrate and said crystalline silicon layer.

Claim 12

The electrooptic switch of claim 7 wherein said first contact is physically connected to said silicon substrate.

Claim 13

The electrooptic switch of claim 7 wherein said second contact is a surface contact physically connected to said n doped region.

Claim 14

The electrooptic switch of claim 7 wherein said waveguides converge to a common area then diverge after said common area and wherein an optical signal entering from one of said diverging waveguides may be shifted electrooptically to pass predominently in either of said diverging waveguides.

Claim 15

An electrooptic switch comprising (a) a silicon substrate; (b) a dielectric layer deposited upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer comprising two dissimilary doped regions and two diverging waveguides having a common area; (d) a passivating layer substantially covering said crystalline silicon layer; (e) a first contact electrically connected to said waveguide common area; and (f) a second contact electrically connected to said crystalline silicon layer adjacent to said common area, said first and second electric contacts for providing a current through said switch in order to divide light traveling through said waveguide common area between said two diverging waveguides.

Claim 16

An electrooptic switch comprising (a) a silicon substrate; (b) a dielectric layer deposited upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer comprising two dissimilary doped regions and two diverging waveguides having a common area; (d) a passivating layer substantially covering said crystalline silicon layer; (e) a first contact electrically connected to said waveguide common area; and (f) a second contact electrically connected to said crystalline silicon layer adjacent to said common area, said first and second electric contacts for providing a current through said switch in order to divide light traveling through said waveguide common area between said two diverging waveguides.

Claim 17

An electroptical switch comprising: (a) a substrate; (b) a first dielectric layer deposited on said substrate; (c) a first silicon layer deposited on said first dielectric layer, said first silicon layer forming a first waveguide for light transmission; (d) a second dielectric layer deposited on said first silicon layer for containing said first waveguide; (e) a second silicon layer deposited on said second dielectric layer, said second silicon layer forming a second waveguide for the transmission of light; (f) a passivating layer covering said second silicon (g) a crossover region wherein said second waveguide passes over said first waveguide and said second dielectric layer is deleted; (h) a doped p-type region positioned at said crossover region which is electrically connected to a contact; and (i) a waveguide contact for completing circuits between said doped p-type region and said first and second waveguides in order to direct the transfer of light therebetween.

Claim 18

An electroptical switch comprising: (a) a substrate; (b) a first dielectric layer deposited on said substrate; (c) a first silicon layer deposited on said first dielectric layer, said first silicon layer forming a first waveguide for light transmission; (d) a second dielectric layer deposited on said first silicon layer for containing said first waveguide; (e) a second silicon layer deposited on said second dielectric layer, said second silicon layer forming a second waveguide for the transmission of light; (f) a passivating layer covering said second silicon (g) a crossover region wherein said second waveguide passes over said first waveguide and said second dielectric layer is deleted; (h) a doped p-type region positioned at said crossover region which is electrically connected to a contact; and (i) a waveguide contact for completing circuits between said doped p-type region and said first and second waveguides in order to direct the transfer of light therebetween.

Claim 19

The electrooptical switch of claim 14 wherein first and second silicon layers comprise n-type regions.

Claim 20

The electrooptical switch of claim 14 wherein said doped p-typed region comprises two p + doped areas positioned in said first waveguide and said second waveguide.

Claim 21

The electrooptical switch of claim 14 wherein said crossover region is capable of sustaining multiple light phases.

Claim 22

The electrooptical switch of claim 14 wherein said dielectric layers comprise silicon oxide.

Claim 23

An electrooptic switch comprising: (a) a silicon substrate; (b) a dielectric layer deposited upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into two diverging waveguides having a common area which comprises an n-type region and a p-type region, said p type region forming a variable mirror for selectively diverting optical signals; (d) a passivating layer substantially covering said crystalline silicon layer; (e) a first contact electrically covering said n-type region of said waveguide common area; and (f) a second contact electrically connected to said p-type region, said first and second electric contacts for providing an electric current through said switch in order to selectively divert light traveling through said waveguide common area.

Claim 24

An electrooptic switch comprising: (a) a silicon substrate; (b) a dielectric layer deposited upon said silicon substrate; (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into two diverging waveguides having a common area which comprises an n-type region and a p-type region, said p type region forming a variable mirror for selectively diverting optical signals; (d) a passivating layer substantially covering said crystalline silicon layer; (e) a first contact electrically covering said n-type region of said waveguide common area; and (f) a second contact electrically connected to said p-type region, said first and second electric contacts for providing an electric current through said switch in order to selectively divert light traveling through said waveguide common area.