US4649624A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices in recrystallized semiconductor films on electrooptic substrates
Assignee: United States Department of the Navy
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Filing: 1983-10-03
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Granted: 1987-03-17
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Expires: 2003-10-03
Abstract
Abstract This invention relates to a process of manufacturing an integrated structure in which optical signals can be processed in an electrooptic material such as lithium tantalate and electrical signals can be processed in a semiconductor material such as silicon. Microelectronic semiconductors are fabricated in the semiconductor material and electrooptic devices are fabricated in the electrooptic material. Devices made by the process of the present invention are also disclosed.
Inventors
- 👤 Ronald E. Reedy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:05
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; Y; Y10; Y10S; Y10S148/00; Y10S148/093; Y10S148/094; Y10S148/164
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
127 words
A method of manufacturing an integrated electrooptical device comprising the steps of: (a) providing a substrate of electrooptic material said electrooptic material comprising lithium tantalate; (b) fabricating an optical device in said electrooptic substrate; (c) depositing a layer of transparent thermal insulator on a surface of said electrooptic substrate; (d) depositing layer of semiconductor material on said layer of transparent thermal insulator without damaging said electro-optic material, said semiconductor material comprising silicon; (e) applying a controlled energy beam to said layer of semiconductor material without damaging said electrooptic material and so as to melt said layer of semiconductor material and so as to cause the melted semiconductor material to recrystallize into large grain polycrystalline material; (f) fabricating a semiconductor device in said recrystallized large grain polycrystalline material.
Claim 2
Independent Claim
127 words
A method of manufacturing an integrated electrooptical device comprising the steps of: (a) providing a substrate of electrooptic material said electrooptic material comprising lithium tantalate; (b) fabricating an optical device in said electrooptic substrate; (c) depositing a layer of transparent thermal insulator on a surface of said electrooptic substrate; (d) depositing layer of semiconductor material on said layer of transparent thermal insulator without damaging said electro-optic material, said semiconductor material comprising silicon; (e) applying a controlled energy beam to said layer of semiconductor material without damaging said electrooptic material and so as to melt said layer of semiconductor material and so as to cause the melted semiconductor material to recrystallize into large grain polycrystalline material; (f) fabricating a semiconductor device in said recrystallized large grain polycrystalline material.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein: said step of providing an electrooptic substrate including providing an electrooptic substrate having at least one polished surface.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein step (b) comprises: fabricating at least one optical waveguide in said electrooptic substrate.
Claim 5
Dependent Claim
27 words
The method of claim 1 wherein said step of fabricating a semiconductor device comprises the step of fabricating a transistor in said recrystallized large grain polycrystalline material.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said transparent thermal insulator comprises silicon dioxide.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said controlled energy beam comprises a laser beam.
Claim 8
Dependent Claim
15 words
The method of claim 6 wherein said laser beam comprises an argon ion laser beam.
Claim 9
Dependent Claim
30 words
The method of claim 1 further comprising step of: following step (d) and before step (e), heating said substrate at approximately 875° C. in flowing nitrogen for approximately 30 minutes.
Claim 10
Dependent Claim
50 words
The method of claim 1 wherein: step (e) is accomplished by subjecting said layer of semiconductor material that is deposited on said layer of transparent thermal insulator to a laser scan at the rate of approximately 0.25 to 0.5 cm/sec at a substrate temperature in the range of 425° C.
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein: said layer of semiconductor material comprises germanium.
Claim 12
Independent Claim
119 words
The method of manufacturing an integrated electrooptical device comprising the steps of: (a) providing a substrate of electrooptic material comprising lithium tantalate; (b) fabricating an optical device in said electrooptic substrate; (c) depositing a layer of transparent thermal insulator on a surface of said electrooptic substrate; (d) depositing a layer of semiconductor material on said layer of transparent thermal insulator said semiconductor comprising germanium; (e) applying a controlled energy beam to said layer of semiconductor material without damaging said electrooptic material and so as to melt said layer of semiconductor material and so as to cause the melted semiconductor material to recrystallize into large grain polycrystalline material; (f) fabricating a semiconductor device in said recrystallized large grain polycrystalline material.
Claim 13
Independent Claim
119 words
The method of manufacturing an integrated electrooptical device comprising the steps of: (a) providing a substrate of electrooptic material comprising lithium tantalate; (b) fabricating an optical device in said electrooptic substrate; (c) depositing a layer of transparent thermal insulator on a surface of said electrooptic substrate; (d) depositing a layer of semiconductor material on said layer of transparent thermal insulator said semiconductor comprising germanium; (e) applying a controlled energy beam to said layer of semiconductor material without damaging said electrooptic material and so as to melt said layer of semiconductor material and so as to cause the melted semiconductor material to recrystallize into large grain polycrystalline material; (f) fabricating a semiconductor device in said recrystallized large grain polycrystalline material.
Claim 14
Dependent Claim
13 words
The method of claim 11 wherein said layer of semiconductor material comprises germanium.
Claim 15
Independent Claim
127 words
A method of manufacturing an integrated electrooptical device comprising the steps of: (a) providing a substrate of electrooptic material comprising lithium niobate; (b) fabricating an optical device in said electrooptic substrate; (c) depositing a layer of transparent thermal insulator on a surface of said electrooptic substrate; (d) depositing a layer of semiconductor material on said layer of transparent thermal insulator said semiconductor material being selected from the group comprising silicon and germanium; (e) applying a controlled energy beam to said layer of semiconductor material without damaging said electrooptic material and so as to melt said layer of semiconductor material and so as to cause the melted semiconductor material to recrystallize into large grain polycrystalline material; (f) fabricating a semiconductor device in said recrystallized large grain polycrystalline material.
Claim 16
Independent Claim
127 words
A method of manufacturing an integrated electrooptical device comprising the steps of: (a) providing a substrate of electrooptic material comprising lithium niobate; (b) fabricating an optical device in said electrooptic substrate; (c) depositing a layer of transparent thermal insulator on a surface of said electrooptic substrate; (d) depositing a layer of semiconductor material on said layer of transparent thermal insulator said semiconductor material being selected from the group comprising silicon and germanium; (e) applying a controlled energy beam to said layer of semiconductor material without damaging said electrooptic material and so as to melt said layer of semiconductor material and so as to cause the melted semiconductor material to recrystallize into large grain polycrystalline material; (f) fabricating a semiconductor device in said recrystallized large grain polycrystalline material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-16 | 1990-09-15 | 1991-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-16 | 1994-09-15 | 1995-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-16 | 1998-09-15 | 1999-03-17 | $7700.00 | Window Closed / Lapsed |