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US5904550A
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Method of producing a semiconductor device
Assignee: Samsung Display Co Ltd
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Filing: 1996-11-19
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Granted: 1999-05-18
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Expires: 2016-11-19
Abstract
Abstract A method of preparing a semiconductor device, comprising: forming an amorphous silicon layer on a substrate, and applying shots of an excimer laser beam to the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being sixty percent or greater of an average value of the grain size.
Inventors
- 👤 Michiya Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3466; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
105 words
A method of producing a semiconductor device, comprising: (a) forming an amorphous silicon layer on a substrate, and (b) applying a plurality of shots of an excimer laser beam to a region of the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being sixty percent or greater of an average value of the grain size.
Claim 2
Independent Claim
105 words
A method of producing a semiconductor device, comprising: (a) forming an amorphous silicon layer on a substrate, and (b) applying a plurality of shots of an excimer laser beam to a region of the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being sixty percent or greater of an average value of the grain size.
Claim 3
Dependent Claim
23 words
The method according to claim 1, wherein the average value of the crystallite sizes on the (111) plane is 180 nm or greater.
Claim 4
Dependent Claim
23 words
The method according to claim 2, wherein the average value of the grain sizes of the silicon grains is greater than 200 nm.
Claim 5
Dependent Claim
19 words
The method according to claim 1, wherein the excimer layer beams are applied to the amorphous silicon layer twice.
Claim 6
Dependent Claim
17 words
The method according to claim 1, wherein the polysilicon layer has a thickness of 500 to 1500Å.
Claim 7
Dependent Claim
17 words
The method according to claim 1, wherein the amorphous silicon layer is formed by chemical vapor deposition.
Claim 8
Dependent Claim
11 words
The method according to claim 1, wherein the substrate is quartz.
Claim 9
Dependent Claim
22 words
The method according to claim 1, wherein the amorphous silicon layer is formed on the substrate at a temperature of 550° C.
Claim 10
Independent Claim
35 words
The method according to claim wherein 1, the excimer laser beams were applied to the amorphous silicon layer at a temperature of about 250° C. and at an energy density of 300 mJ/cm 2 .
Claim 11
Dependent Claim
32 words
The method according to claim 4, wherein the amorphous silicon layer is formed by chemical vapor deposition, the polysilicon layer has a thickness of 500 to 1500Å, and the substrate is quartz.
Claim 12
Independent Claim
112 words
A method of producing a semiconductor device, comprising: (i) forming an amorphous silicon layer on a substrate, and (ii) applying a plurality of shots of an excimer laser beam to a region of the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being 100 nm to 300 nm, and being sixty percent or greater of an average value of the grain size.
Claim 13
Independent Claim
112 words
A method of producing a semiconductor device, comprising: (i) forming an amorphous silicon layer on a substrate, and (ii) applying a plurality of shots of an excimer laser beam to a region of the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being 100 nm to 300 nm, and being sixty percent or greater of an average value of the grain size.
Claim 14
Dependent Claim
24 words
The method according to claim 11, wherein the average value of the crystallite size of the (111) plane is 200 nm to 300 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-05-17 | 2002-11-16 | 2003-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-17 | 2006-11-16 | 2007-05-18 | $3760.00 | Window Closed / Lapsed |
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