Patent US5901087A successfully refreshed from Google Patents.
US5901087A
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Gain modulated sense amplifier
Assignee: STMicroelectronics SRL
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Filing: 1997-03-27
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Granted: 1999-05-04
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Expires: 2017-03-27
Abstract
Abstract A gain modulated sense amplifier, particularly for memory devices, that comprises a virtual ground latch structure which has two output nodes and which includes equalization transistor of a first polarity which equalizes the two output nodes and is connected between a first branch and a second branch, in which the output nodes are arranged; the equalization transistor is driven by an equalization signal whose slope can be modulated as a function of conductivity of a memory cell of the memory device.
Inventors
- 👤 Luigi Pascucci
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:19
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/06; G11C7/065; G11C16/00; G11C16/02; G11C16/06; G11C16/26; G11C16/28
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
82 words
Gain modulated sense amplifier, particularly for a memory device, comprising a virtual ground latch structure having two output nodes, the virtual ground latch structure including an equalization transistor of a first polarity which equalizes said two output nodes and is connected between a first branch and a second branch, in which said output nodes are arranged, said equalization transistor being driven by an equalization signal whose slope is modulated as a function of conductivity of a memory cell of said memory device.
Claim 2
Dependent Claim
82 words
Gain modulated sense amplifier, particularly for a memory device, comprising a virtual ground latch structure having two output nodes, the virtual ground latch structure including an equalization transistor of a first polarity which equalizes said two output nodes and is connected between a first branch and a second branch, in which said output nodes are arranged, said equalization transistor being driven by an equalization signal whose slope is modulated as a function of conductivity of a memory cell of said memory device.
Claim 3
Dependent Claim
71 words
The gain modulated sense amplifier according to claim 1, further comprising, for each one of said branches, a precharge transistor of a second polarity that is connected between the supply voltage and said output node, the gate terminal of the precharge transistor of the first branch being connected to the output node of said second branch, said precharge transistors being adapted to precharge said output nodes to reach an operating point.
Claim 4
Dependent Claim
108 words
The gain modulated sense amplifier according to claim 1, wherein said virtual ground latch structure comprises a first pair of transistors and a second pair of transistors, said first pair of transistors including said transistor of a first polarity and a transistor of a second polarity, said second pair of transistors including a second transistor of said first polarity and a second transistor of said second polarity, the gate terminals of the transistors of said first pair being connected to the output node of said second branch and the gate terminals of the transistors of said second pair being connected to the output node of said first branch.
Claim 5
Dependent Claim
20 words
The gain modulated sense amplifier according to claim 2, wherein said precharge transistors of said second polarity are native transistors.
Claim 6
Dependent Claim
21 words
The gain modulated sense amplifier according to claim 1, wherein said equalization transistor of said first polarity is a native transistor.
Claim 7
Dependent Claim
24 words
The gain modulated sense amplifier according to claim 1, wherein said equalization transistor of said first polarity is a light voltage shift (LVS) transistor.
Claim 8
Dependent Claim
29 words
The gain modulated sense amplifier according to claim 3, wherein said transistors of said first polarity are N-channel transistors and said transistors of said second polarity are P-channel transistors.
Claim 9
Dependent Claim
62 words
The gain modulated sense amplifier according to claim 1, wherein said sense amplifier is used in an imbalance reference system with current gain at the loads, to determine the programmed/nonprogrammed status of a memory cell, said equalization transistor being crossed by a current that is equal to the difference between the currents that are present on the branches of said reference system.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-03 | 2002-11-02 | 2003-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-03 | 2006-11-02 | 2007-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-03 | 2010-11-02 | 2011-05-04 | $7700.00 | Window Closed / Lapsed |