Patent US2238088A successfully refreshed from Google Patents.
Patent US5900668A successfully refreshed from Google Patents.
US5900668A
Expired / Lapsed
US
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Low capacitance interconnection
Assignee: Advanced Micro Devices Inc
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Filing: 1995-11-30
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Granted: 1999-05-04
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Expires: 2015-11-30
Abstract
Abstract A semiconductor device having reduced parasitic capacitance and, consequentially increased integrated circuit speed, is achieved by removing sections of dielectric interlayers which do not support conductive patterns, as by anisotropic etching, to form air gaps which can remain or are filled in with a dielectric material having a low dielectric constant. In another embodiment, a conformal dielectric coating is deposited, having a low dielectric constant.
Inventors
- 👤 Donald L. Wollesen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/45; H10W20/48; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/90; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
106 words
A semiconductor device comprising a plurality of sequentially formed dielectric and conductive layers, each conductive layer comprising at least one conductive pattern; wherein each dielectric layer comprises a portion consisting essentially of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon and each dielectric layer comprises a second dielectric material between and adjoining each portion of the first dielectric material, and the second dielectric material of each dielectric layer has a dielectric constant less than the dielectric constant of the first dielectric material and comprises a polyimide or other organic dielectric, wherein the first dielectric material is silicon dioxide.
Claim 2
Dependent Claim
106 words
A semiconductor device comprising a plurality of sequentially formed dielectric and conductive layers, each conductive layer comprising at least one conductive pattern; wherein each dielectric layer comprises a portion consisting essentially of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon and each dielectric layer comprises a second dielectric material between and adjoining each portion of the first dielectric material, and the second dielectric material of each dielectric layer has a dielectric constant less than the dielectric constant of the first dielectric material and comprises a polyimide or other organic dielectric, wherein the first dielectric material is silicon dioxide.
Claim 3
Dependent Claim
112 words
A semiconductor device comprising a plurality of sequentially formed dielectric and conductive layers, each conductive layer comprising at least one conductive pattern; wherein each dielectric layer comprises a portion consisting essentially of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon and further comprising a thin conformal dielectric coating thereon and a topside dielectric layer formed on the thin conformal dielectric coating, wherein the topside dielectric layer comprises a dielectric material having a dielectric constant less than the dielectric constant of the conformal dielectric coating and the topside dielectric layer comprises a polyimide or other organic dielectric, wherein the first dielectric material is silicon dioxide.
Claim 4
Dependent Claim
112 words
A semiconductor device comprising a plurality of sequentially formed dielectric and conductive layers, each conductive layer comprising at least one conductive pattern; wherein each dielectric layer comprises a portion consisting essentially of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon and further comprising a thin conformal dielectric coating thereon and a topside dielectric layer formed on the thin conformal dielectric coating, wherein the topside dielectric layer comprises a dielectric material having a dielectric constant less than the dielectric constant of the conformal dielectric coating and the topside dielectric layer comprises a polyimide or other organic dielectric, wherein the first dielectric material is silicon dioxide.
Claim 5
Dependent Claim
22 words
The semiconductor device according to claim 2, wherein the conformal dielectric coating comprises a silicon oxide, silicon nitride or a silicon oxynitride.
Claim 6
Dependent Claim
115 words
A semiconductor device comprising a plurality of sequentially formed dielectric and conductive layers, each conductive layer comprising at least one conductive pattern; wherein each dielectric layer comprises a portion of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon and further comprising a first thin conformal dielectric coating and a second thin conformal dielectric coating formed thereon, wherein the dielectric constant of the first conformal dielectric coating is greater than the dielectric constant of the second conformal dielectric coating, wherein the second conformal dielectric layer comprises a polyimide or other organic dielectric and the first conformal dielectric coating comprises a silicon oxide, silicon nitride or a silicon oxynitride.
Claim 7
Dependent Claim
115 words
A semiconductor device comprising a plurality of sequentially formed dielectric and conductive layers, each conductive layer comprising at least one conductive pattern; wherein each dielectric layer comprises a portion of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon and further comprising a first thin conformal dielectric coating and a second thin conformal dielectric coating formed thereon, wherein the dielectric constant of the first conformal dielectric coating is greater than the dielectric constant of the second conformal dielectric coating, wherein the second conformal dielectric layer comprises a polyimide or other organic dielectric and the first conformal dielectric coating comprises a silicon oxide, silicon nitride or a silicon oxynitride.
Claim 8
Dependent Claim
119 words
A semiconductor device comprising: a plurality of dielectric layers and a plurality of conductive layers sequentially formed on top of one another, each conductive layer comprising at least one conductive pattern, wherein each dielectric layer comprises a portion consisting essentially of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon, and a thin conformal dielectric coating thereon; and a topside dielectric layer formed on the thin conformal dielectric coating, wherein the topside dielectric layer comprises a dielectric material having a dielectric constant less than the dielectric constant of the conformal dielectric coating, wherein the topside dielectric layer comprises a polyimide or other organic dielectric, wherein the first dielectric material is silicon dioxide.
Claim 9
Dependent Claim
119 words
A semiconductor device comprising: a plurality of dielectric layers and a plurality of conductive layers sequentially formed on top of one another, each conductive layer comprising at least one conductive pattern, wherein each dielectric layer comprises a portion consisting essentially of a first dielectric material only substantially under each conductive pattern of the conductive layer formed thereon, and a thin conformal dielectric coating thereon; and a topside dielectric layer formed on the thin conformal dielectric coating, wherein the topside dielectric layer comprises a dielectric material having a dielectric constant less than the dielectric constant of the conformal dielectric coating, wherein the topside dielectric layer comprises a polyimide or other organic dielectric, wherein the first dielectric material is silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-03 | 2002-11-02 | 2003-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-03 | 2006-11-02 | 2007-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-03 | 2010-11-02 | 2011-05-04 | $7700.00 | Window Closed / Lapsed |