Patent US5896870A successfully refreshed from Google Patents.
US5896870A
Expired / Lapsed
US
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Method of removing slurry particles
Assignee: International Business Machines Corp
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Filing: 1997-03-11
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Granted: 1999-04-27
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Expires: 2017-03-11
Abstract
Abstract Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the Chemical Mechanical Polish (CMP) process to dissolve the slurry and etch the abrasive particles.
Inventors
- 👤 Cuc K. Huynh
- 👤 Harold G. Linde
- 👤 Patricia E. Marmillion
- 👤 Anthony M. Palagonia
- 👤 Bernadette A. Pierson
- 👤 Matthew J. Rutten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:12
CPC Classifications
B; B24; B24B; B24B55/00; B24B55/12; H; H10; H10P; H10P95/00; B24B37/00; B24B37/04; C; C09; C09K; C09K3/00; C09K3/14; C09K3/1454; C09K3/1463; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
42 words
A method for in situ reduction in size of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: adding a reagent to the slurry during the polishing process to reduce the size of the abrasive particles.
Claim 2
Independent Claim
42 words
A method for in situ reduction in size of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: adding a reagent to the slurry during the polishing process to reduce the size of the abrasive particles.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein the abrasive particles comprise cerium oxide and the reagent comprises nitric acid.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein the abrasive particles comprise silica, silicon, alumina, or tungsten.
Claim 5
Dependent Claim
30 words
The method of claim 1, wherein the abrasive particles comprise silica or silicon and the reagent is selected from the group consisting of aqueous KOH, alcoholic KOH, and aqueous TMAH.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein the abrasive particles comprise alumina and the reagent comprises a mixture of methanol, hydrochloric acid, and hydrofluoric acid.
Claim 7
Dependent Claim
19 words
The method of claim 1, wherein the abrasive particles comprises a tungsten and the reagent comprises a sodium hypochlorite.
Claim 8
Dependent Claim
19 words
The method of claim 1, wherein the abrasive particles comprise an alumina and the reagent comprises a phosphoric acid.
Claim 9
Independent Claim
46 words
A method for in situ reduction in size of agglomerations of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: adding a reagent to the slurry during the polishing process to reduce the size of the agglomerations of abrasive particles.
Claim 10
Independent Claim
46 words
A method for in situ reduction in size of agglomerations of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: adding a reagent to the slurry during the polishing process to reduce the size of the agglomerations of abrasive particles.
Claim 11
Independent Claim
37 words
A method for in situ removal of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: exposing the slurry to a reagent during the polishing process to dissolve the abrasive particles.
Claim 12
Independent Claim
37 words
A method for in situ removal of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: exposing the slurry to a reagent during the polishing process to dissolve the abrasive particles.
Claim 13
Independent Claim
61 words
A method for in situ reduction in size of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: placing the wafer against a rotating polishing pad; applying the slurry to the polishing pad; and applying a reagent to one of the slurry and the pad during the polishing process to reduce the abrasive particle size.
Claim 14
Independent Claim
61 words
A method for in situ reduction in size of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: placing the wafer against a rotating polishing pad; applying the slurry to the polishing pad; and applying a reagent to one of the slurry and the pad during the polishing process to reduce the abrasive particle size.
Claim 15
Dependent Claim
18 words
The method of claim 10, wherein the abrasive particles comprise cerium oxide and the reagent comprises nitric acid.
Claim 16
Dependent Claim
15 words
The method of claim 10, wherein the abrasive particles comprise silica, silicon, alumina, or tungsten.
Claim 17
Dependent Claim
30 words
The method of claim 10, wherein the abrasive particles comprise silica or silicon and the reagent is selected from the group consisting of aqueous KOH, alcoholic KOH, and aqueous TMAH.
Claim 18
Dependent Claim
24 words
The method of claim 10, wherein the abrasive particles comprise alumina and the reagent comprises a mixture of methanol, hydrochloric acid, and hydrofluoric acid.
Claim 19
Dependent Claim
19 words
The method of claim 10, wherein the abrasive particles comprises a tungsten and the reagent comprises a sodium hypochlorite.
Claim 20
Dependent Claim
19 words
The method of claim 10, wherein the abrasive particles comprise an alumina and the reagent comprises a phosphoric acid.
Claim 21
Independent Claim
52 words
A method for in situ reduction in size of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: dispensing a CMP slurry; planarizing a semiconductor thin film using the slurry; reducing the slurry dispense; dispensing a reagent during a polishing process; and rinsing with DI water.
Claim 22
Independent Claim
52 words
A method for in situ reduction in size of abrasive particles in a slurry during a polishing process for planarization of a wafer, comprising: dispensing a CMP slurry; planarizing a semiconductor thin film using the slurry; reducing the slurry dispense; dispensing a reagent during a polishing process; and rinsing with DI water.
Claim 23
Dependent Claim
21 words
The method of claim 17, wherein the application of the reagent is controlled to reduce the size of the abrasive particles.
Claim 24
Dependent Claim
23 words
The method of claim 17, wherein the application of the reagent is controlled to reduce the size of agglomerations of the abrasive particles.
Claim 25
Dependent Claim
18 words
The method of claim 17, wherein the application of the reagent is controlled to dissolve the abrasive particles.
Claim 26
Dependent Claim
25 words
The method of claim 17, wherein the step of dispensing the reagent is for a time sufficient to reduce the size of the abrasive particles.
Claim 27
Dependent Claim
18 words
The method of claim 17, wherein the abrasive particles comprise cerium oxide and the reagent comprises nitric acid.
Claim 28
Dependent Claim
15 words
The method of claim 17, wherein the abrasive particles comprise silica, silicon, alumina, or tungsten.
Claim 29
Dependent Claim
30 words
The method of claim 17, wherein the abrasive particles comprise silica or silicon and the reagent is selected from the group consisting of aqueous KOH, alcoholic KOH, and aqueous TMAH.
Claim 30
Dependent Claim
24 words
The method of claim 17, wherein the abrasive particles comprise alumina and the reagent comprises a mixture of methanol, hydrochloric acid, and hydrofluoric acid.
Claim 31
Dependent Claim
18 words
The method of claim 17, wherein the abrasive particles comprise tungsten and the reagent comprises a sodium hypochlorite.
Claim 32
Dependent Claim
18 words
The method of claim 17, wherein the abrasive particles comprise alumina and the reagent comprises a phosphoric acid.
References Cited (Backward Citations)
US3728154A
Cited
US4050954A
Cited
US4932168A
Cited
US4968381A
Cited
US5176756A
Cited
JPH04158613A
Cited
US5320706A
Cited
US5391511A
Cited
US5389194A
Cited
US5456758A
Cited
US5478436A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-26 | 2002-10-26 | 2003-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-26 | 2006-10-26 | 2007-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-26 | 2010-10-26 | 2011-04-27 | $7700.00 | Window Closed / Lapsed |