US5478436A
Expired / Lapsed
US
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Selective cleaning process for fabricating a semiconductor device
Assignee: NXP USA Inc
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Filing: 1994-12-27
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Granted: 1995-12-26
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Expires: 2014-12-27
Abstract
Abstract A selective cleaning process for fabricating a semiconductor device includes the steps of processing a semiconductor substrate (10) and introducing metal contaminants (22) by contacting the semiconductor substrate (10) with a polishing slurry during a polished planarization process. The metal contaminants (22) are removed by applying a cleaning solution including an organic solvent and a compound containing fluorine. The chemical constituents of the cleaning solution are substantially unreactive with metal interconnect material (12) underlying dielectric layers (18) present on the semiconductor substrate (10). The preferred cleaning solution comprises an aqueous solution of ethylene glycol and ammonium fluoride.
Inventors
- 👤 Paul M. Winebarger
- 👤 Mark A. Zaleski
- 👤 Troy B. Morrison
- 👤 Jeffrey J. Sultemeier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:06
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/277; B; B08; B08B; B08B3/00; B08B3/04; B08B3/08; H10P52/00; H10P52/40; H10P52/403; H10P70/23; H10P70/237; H10P95/00; H10P95/06; H10P95/062; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
47 words
A process for fabricating a semiconductor device comprising the steps of: processing a semiconductor substrate and introducing metal contaminants thereon; and applying a cleaning solution to the semiconductor substrate to remove the metal contaminants, wherein the cleaning solution comprises an organic solvent and a compound containing fluorine.
Claim 2
Dependent Claim
47 words
A process for fabricating a semiconductor device comprising the steps of: processing a semiconductor substrate and introducing metal contaminants thereon; and applying a cleaning solution to the semiconductor substrate to remove the metal contaminants, wherein the cleaning solution comprises an organic solvent and a compound containing fluorine.
Claim 3
Dependent Claim
15 words
The process of claim 1, wherein the organic solvent is an anhydrous, polar organic compound.
Claim 4
Dependent Claim
19 words
The process of claim 2, wherein the organic solvent is selected from the group consisting of glycol and dimethylsulfoxide.
Claim 5
Dependent Claim
20 words
The process of claim 3, wherein the glycol is selected from the group consisting of ethylene glycol and propylene glycol.
Claim 6
Dependent Claim
24 words
The process of claim 1, wherein the compound containing fluorine is selected from the group consisting of ammonium fluoride, hydrogen fluoride, and perfluoric acid.
Claim 7
Dependent Claim
35 words
The process of claim 1, wherein the step of applying a cleaning solution comprises subjecting the semiconductor substrate to the cleaning solution while maintaining the temperature of the cleaning solution between 20° to 80° C.
Claim 8
Dependent Claim
26 words
The process of claim 1, wherein the step of exposing a semiconductor substrate to a liquid solution comprises exposing the semiconductor substrate to a polishing slurry.
Claim 9
Dependent Claim
57 words
A process for fabricating a semiconductor device comprising the steps of: contacting a semiconductor substrate with a polishing slurry; applying a cleaning solution to the semiconductor substrate, wherein the cleaning solution comprises an organic solvent and a compound containing fluorine; applying a glycol rinse to the semiconductor substrate; and applying a water rinse to the semiconductor substrate.
Claim 10
Dependent Claim
57 words
A process for fabricating a semiconductor device comprising the steps of: contacting a semiconductor substrate with a polishing slurry; applying a cleaning solution to the semiconductor substrate, wherein the cleaning solution comprises an organic solvent and a compound containing fluorine; applying a glycol rinse to the semiconductor substrate; and applying a water rinse to the semiconductor substrate.
Claim 11
Dependent Claim
28 words
The process of claim 8, wherein the cleaning solution comprises glycol and a fluorinated compound selected from the group consisting of ammonium fluoride, hydrogen fluoride, and perfluoric acid.
Claim 12
Dependent Claim
17 words
The process of claim 9, wherein the glycol comprises one of either ethylene glycol or propylene glycol.
Claim 13
Dependent Claim
12 words
The process of claim 8, wherein the glycol rinse comprises ethylene glycol.
Claim 14
Dependent Claim
58 words
A process for fabricating a semiconductor device comprising the steps of: subjecting a substrate surface to a polishing slurry containing metal constituents; applying a solution containing ethylene glycol and a fluorinated compound to the substrate surface to remove metal contaminants from the substrate surface; rinsing the substrate surface with ethylene glycol; and rinsing the substrate surface with water.
Claim 15
Dependent Claim
58 words
A process for fabricating a semiconductor device comprising the steps of: subjecting a substrate surface to a polishing slurry containing metal constituents; applying a solution containing ethylene glycol and a fluorinated compound to the substrate surface to remove metal contaminants from the substrate surface; rinsing the substrate surface with ethylene glycol; and rinsing the substrate surface with water.
Claim 16
Dependent Claim
23 words
The process of claim 12, wherein the fluorinated compound is selected from the group consisting of ammonium fluoride, hydrogen fluoride, and perfluoric acid.
Claim 17
Dependent Claim
27 words
The process of claim 12, wherein the step of applying a solution comprises applying the solution while maintaining the temperature of the solution above about 20° C.
Claim 18
Dependent Claim
75 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having a thin-film layer thereon; applying a polishing slurry to the semiconductor substrate to remove at least a portion of the thin-film layer; applying a cleaning solution containing ethylene glycol and a fluorinated compound to the semiconductor substrate to remove metal contaminants from the semiconductor substrate; rinsing the semiconductor substrate with ethylene glycol; and rinsing the semiconductor substrate with water.
Claim 19
Dependent Claim
75 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having a thin-film layer thereon; applying a polishing slurry to the semiconductor substrate to remove at least a portion of the thin-film layer; applying a cleaning solution containing ethylene glycol and a fluorinated compound to the semiconductor substrate to remove metal contaminants from the semiconductor substrate; rinsing the semiconductor substrate with ethylene glycol; and rinsing the semiconductor substrate with water.
Claim 20
Dependent Claim
31 words
The process of claim 15, wherein the step of applying a cleaning solution to remove metal contaminants comprises removing metal contaminants selected from the group consisting of alkaline metals and iron.
Claim 21
Dependent Claim
30 words
The process of claim 15, wherein the step of applying a cleaning solution comprises applying the cleaning solution while maintaining the temperature of the cleaning solution above about 20° C.
References Cited (Backward Citations)
US5112437A
Cited
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